GB1126510A - A method of melting a rod of crystalline material zone-by-zone - Google Patents

A method of melting a rod of crystalline material zone-by-zone

Info

Publication number
GB1126510A
GB1126510A GB44084/67A GB4408467A GB1126510A GB 1126510 A GB1126510 A GB 1126510A GB 44084/67 A GB44084/67 A GB 44084/67A GB 4408467 A GB4408467 A GB 4408467A GB 1126510 A GB1126510 A GB 1126510A
Authority
GB
United Kingdom
Prior art keywords
supply
zone
rod
rods
fed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB44084/67A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1126510A publication Critical patent/GB1126510A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28Controlling or regulating
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91Downward pulling
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/912Replenishing liquid precursor, other than a moving zone

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1,126,510. Zone-melting. SIEMENS A.G. 27 Sept., 1967 [28 Sept., 1966], No. 44084/67. Addition to 1044592. Heading B1S. After lateral shifting movement of a recrystallized rod 6 so that the supply rod 1 is fed eccentrically to an enlarged molten zone 3 (Fig. 2), a further supply rod 5 is fed to the molten zone (Fig. 3), the supply rods being fed through separate loops of an induction heating device 2 of figure of eight shape (Fig. 5). The supply rods may alternatively be fed to the molten-zone from below. The heating device is modified if more than two supply rods are fed. Separate heating devices for each supply rod may alternatively be employed. In a further modification, the supply rods may be inclined to one another at an acute angle. After feeding the further supply rod(s) to the molten zone, the recrystallized rod may be subjected to oscillatory lateral movement or to eccentric rotation at an amplitude of half the radius of the supply rods. Alternatively, the supply rods may be subjected to oscillatory lateral movement or to eccentric rotation. The supply and recrystallized rods may be rotated.
GB44084/67A 1966-09-28 1967-09-27 A method of melting a rod of crystalline material zone-by-zone Expired GB1126510A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0106157 1966-09-28

Publications (1)

Publication Number Publication Date
GB1126510A true GB1126510A (en) 1968-09-05

Family

ID=7527176

Family Applications (1)

Application Number Title Priority Date Filing Date
GB44084/67A Expired GB1126510A (en) 1966-09-28 1967-09-27 A method of melting a rod of crystalline material zone-by-zone

Country Status (3)

Country Link
US (1) US3539305A (en)
DE (1) DE1544301A1 (en)
GB (1) GB1126510A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4072556A (en) * 1969-11-29 1978-02-07 Siemens Aktiengesellschaft Device for crucible-free floating-zone melting of a crystalline rod and method of operating the same
DE1960088C3 (en) * 1969-11-29 1974-07-25 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for crucible-free zone melting of a crystalline rod
DE102009005837B4 (en) * 2009-01-21 2011-10-06 Pv Silicon Forschungs Und Produktions Gmbh Method and device for producing silicon thin rods

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB755422A (en) * 1953-01-19 1956-08-22 Telefunken Gmbh An improved method for the production of single crystals of semi-conductor materials
NL237834A (en) * 1958-04-09
DE1218404B (en) * 1964-02-01 1966-06-08 Siemens Ag Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
US3470039A (en) * 1966-12-21 1969-09-30 Texas Instruments Inc Continuous junction growth

Also Published As

Publication number Publication date
US3539305A (en) 1970-11-10
DE1544301A1 (en) 1970-05-27

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