CH435207A - Device for crucible-free zone melting - Google Patents

Device for crucible-free zone melting

Info

Publication number
CH435207A
CH435207A CH984866A CH984866A CH435207A CH 435207 A CH435207 A CH 435207A CH 984866 A CH984866 A CH 984866A CH 984866 A CH984866 A CH 984866A CH 435207 A CH435207 A CH 435207A
Authority
CH
Switzerland
Prior art keywords
crucible
free zone
zone melting
melting
free
Prior art date
Application number
CH984866A
Other languages
German (de)
Inventor
Wolfgang Dr Keller
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH435207A publication Critical patent/CH435207A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CH984866A 1965-07-10 1966-07-06 Device for crucible-free zone melting CH435207A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DES98119A DE1275996B (en) 1965-07-10 1965-07-10 Device for crucible-free zone melting
DES0103418 1966-04-26
US83802669A 1969-06-20 1969-06-20

Publications (1)

Publication Number Publication Date
CH435207A true CH435207A (en) 1967-05-15

Family

ID=27212947

Family Applications (1)

Application Number Title Priority Date Filing Date
CH984866A CH435207A (en) 1965-07-10 1966-07-06 Device for crucible-free zone melting

Country Status (7)

Country Link
US (1) US3649210A (en)
BE (1) BE683853A (en)
CH (1) CH435207A (en)
DE (2) DE1275996B (en)
GB (1) GB1148007A (en)
NL (1) NL6609450A (en)
SE (1) SE335852B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3935059A (en) * 1969-07-21 1976-01-27 U.S. Philips Corporation Method of producing single crystals of semiconductor material by floating-zone melting
DE102012213715A1 (en) * 2012-08-02 2014-02-06 Siltronic Ag An apparatus for producing a single crystal by crystallizing the single crystal at a melting zone
CN103255473B (en) * 2013-04-25 2016-06-29 浙江晶盛机电股份有限公司 A kind of assisted heating device for zone melting furnace and monocrystal rod heat preserving method thereof
CN103255472B (en) * 2013-04-25 2016-12-28 浙江晶盛机电股份有限公司 There is zone melting furnace thermal field and the heat preserving method of dual power supply heating

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA674121A (en) * 1963-11-12 Siemens-Schuckertwerke Aktiengesellschaft Method and apparatus for producing a strip of hyperpure semiconductor material
DE1188042B (en) * 1954-01-29 1965-03-04 Siemens Ag Device for crucible zone melting of a rod-shaped crystalline semiconductor body
DE1134967B (en) * 1954-03-02 1962-08-23 Siemens Ag Method for drawing a rod-shaped crystalline semiconductor body
US2932562A (en) * 1956-12-27 1960-04-12 Bell Telephone Labor Inc Zone-melting with joule heat
NL244489A (en) * 1959-10-19
DE1147206B (en) * 1961-10-02 1963-04-18 Siemens Ag Process for the production of rod-shaped silicon single crystals with an average dislocation density by crucible-free zone melting
DE1208292B (en) * 1963-03-29 1966-01-05 Siemens Ag Device for crucible-free zone melting of semiconductor material
US3258314A (en) * 1963-04-12 1966-06-28 Westinghouse Electric Corp Method for interior zone melting of a crystalline rod

Also Published As

Publication number Publication date
DE1519889A1 (en) 1969-08-28
US3649210A (en) 1972-03-14
GB1148007A (en) 1969-04-10
NL6609450A (en) 1967-01-11
DE1519889B2 (en) 1970-10-15
BE683853A (en) 1967-01-09
DE1275996B (en) 1968-08-29
SE335852B (en) 1971-06-14

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