GB1104770A - A low pressure sputtering system - Google Patents

A low pressure sputtering system

Info

Publication number
GB1104770A
GB1104770A GB763067A GB763067A GB1104770A GB 1104770 A GB1104770 A GB 1104770A GB 763067 A GB763067 A GB 763067A GB 763067 A GB763067 A GB 763067A GB 1104770 A GB1104770 A GB 1104770A
Authority
GB
United Kingdom
Prior art keywords
chamber
plasma
low pressure
sputtering system
pressure sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB763067A
Inventor
Peter Alan Birrell Toombs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB763067A priority Critical patent/GB1104770A/en
Publication of GB1104770A publication Critical patent/GB1104770A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/355—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

<PICT:1104770/C6-C7/1> In a low-pressure sputtering apparatus in which material is sputtered from one or more cathodes 20 on to a substrate 14, a ring shaped tungsten filament 13 is provided to form a plasma, which filament is shielded by a cylindrical member 5. The member 5 and top member 3 of the sputtering chamber 1 have annular grooves which together make a plasma forming chamber. The plasma leaving the chamber is confined by an axial magnetic field set up by a coil 22. The sputtering chamber 1 is made of glass, aluminium alloy or non-magnetic stainless steel, and the upper member 3 may be water cooled. An aluminium anode 17 is connected by a lead 18 to the chamber.
GB763067A 1967-02-17 1967-02-17 A low pressure sputtering system Expired GB1104770A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB763067A GB1104770A (en) 1967-02-17 1967-02-17 A low pressure sputtering system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB763067A GB1104770A (en) 1967-02-17 1967-02-17 A low pressure sputtering system

Publications (1)

Publication Number Publication Date
GB1104770A true GB1104770A (en) 1968-02-28

Family

ID=9836802

Family Applications (1)

Application Number Title Priority Date Filing Date
GB763067A Expired GB1104770A (en) 1967-02-17 1967-02-17 A low pressure sputtering system

Country Status (1)

Country Link
GB (1) GB1104770A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4038171A (en) * 1976-03-31 1977-07-26 Battelle Memorial Institute Supported plasma sputtering apparatus for high deposition rate over large area
EP1127954A1 (en) * 2000-02-24 2001-08-29 Applied Materials, Inc. Method and apparatus for shielding a device from a semiconductor wafer process chamber

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4038171A (en) * 1976-03-31 1977-07-26 Battelle Memorial Institute Supported plasma sputtering apparatus for high deposition rate over large area
EP1127954A1 (en) * 2000-02-24 2001-08-29 Applied Materials, Inc. Method and apparatus for shielding a device from a semiconductor wafer process chamber

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