GB1099542A - Method and apparatus for measuring breakdown voltages of diodes and transistors - Google Patents
Method and apparatus for measuring breakdown voltages of diodes and transistorsInfo
- Publication number
- GB1099542A GB1099542A GB651/65A GB65165A GB1099542A GB 1099542 A GB1099542 A GB 1099542A GB 651/65 A GB651/65 A GB 651/65A GB 65165 A GB65165 A GB 65165A GB 1099542 A GB1099542 A GB 1099542A
- Authority
- GB
- United Kingdom
- Prior art keywords
- jan
- transistor
- diode
- diodes
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2632—Circuits therefor for testing diodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
- G01R31/261—Circuits therefor for testing bipolar transistors for measuring break-down voltage or punch through voltage therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Of Devices, Machine Parts, Or Other Structures Thereof (AREA)
- Heterocyclic Carbon Compounds Containing A Hetero Ring Having Nitrogen And Oxygen As The Only Ring Hetero Atoms (AREA)
- Rectifiers (AREA)
Abstract
1,099,542. Automatic current control. EGYESULT IZZOLAMPA ES VILLAMOSSAGI RESZVENVTARSASAG. Jan. 6, 1965 [Jan. 6, 1964], No. 651/65. Heading G3R. [Also in Division G1] In a system for controlling the magnitude of a test current applied to the collector base junction of a transistor 1 in an avalanche breakdown test (see Division G1) the current provided by a generator 2 is monitored by a resistor Rm and the voltage thereacross applied via transformer T2 and diode D5 to an emitter follower circuit V 10 , V 11 and then rectified by diode D3. The rectified voltage is applied to a differential amplifier V 6 , V 7 and the error signal is passed via V 9 , V 8 to control the amplitude of the output from the pulse generating system into the transformer T1 and thence to the transistor 1.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
HUEE001063 | 1964-01-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1099542A true GB1099542A (en) | 1968-01-17 |
Family
ID=10995166
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB651/65A Expired GB1099542A (en) | 1964-01-06 | 1965-01-06 | Method and apparatus for measuring breakdown voltages of diodes and transistors |
Country Status (3)
Country | Link |
---|---|
AT (1) | AT261059B (en) |
DE (1) | DE1464914B2 (en) |
GB (1) | GB1099542A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113030676A (en) * | 2021-02-26 | 2021-06-25 | 陕西三海测试技术开发有限责任公司 | Diode triode wafer testing method based on near particle method |
CN113671336A (en) * | 2021-08-20 | 2021-11-19 | 上海瞻芯电子科技有限公司 | Power device testing device |
-
1964
- 1964-12-15 AT AT1061964A patent/AT261059B/en active
- 1964-12-17 DE DE19641464914 patent/DE1464914B2/en active Pending
-
1965
- 1965-01-06 GB GB651/65A patent/GB1099542A/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113030676A (en) * | 2021-02-26 | 2021-06-25 | 陕西三海测试技术开发有限责任公司 | Diode triode wafer testing method based on near particle method |
CN113671336A (en) * | 2021-08-20 | 2021-11-19 | 上海瞻芯电子科技有限公司 | Power device testing device |
CN113671336B (en) * | 2021-08-20 | 2024-03-08 | 上海瞻芯电子科技有限公司 | Power device testing device |
Also Published As
Publication number | Publication date |
---|---|
DE1464914A1 (en) | 1969-12-18 |
AT261059B (en) | 1968-04-10 |
DE1464914B2 (en) | 1971-04-22 |
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