GB1095294A - Improvements in or relating to processes for the productions of thin layers of metallic or semiconductor materials on carrier plates - Google Patents

Improvements in or relating to processes for the productions of thin layers of metallic or semiconductor materials on carrier plates

Info

Publication number
GB1095294A
GB1095294A GB750365A GB750365A GB1095294A GB 1095294 A GB1095294 A GB 1095294A GB 750365 A GB750365 A GB 750365A GB 750365 A GB750365 A GB 750365A GB 1095294 A GB1095294 A GB 1095294A
Authority
GB
United Kingdom
Prior art keywords
carrier
transferred
source
carbon
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB750365A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1095294A publication Critical patent/GB1095294A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Electrochemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Material is transferred by means of a transport gas at a sub-atmospheric pressure from one surface of a source plate to the adjacent surface of a carrier plate of the same or different material, located parallel to, in heat contact with, and at a higher temperature than, the source plate. The gas may be Cl2, Br2 or I2, a hydrogen halide, or a halide of the material being transferred or, for transfer of carbon, sulphur or a volatile sulphur compound, and may be diluted with H2. The material transferred may be Si, B, Ge, Ti, Zr, Hf, Th, V, Nb, Ta, Cr, Mn, Fe, Ni, Cu or U (using I2), or Zr, Ta, Mo, W or Au (using Cl2). A pressure of 10 mm Hg or below is used. The source plate (6) may rest on the carrier (4) or be separated by an annular spacer 100-200 m thick (7). The carrier rests on a heater (5) of carbon or SiC heated directly or indirectly. (See Figs. 1 and 2 not shown). The carrier may be inert, e.g. SiO2 or Al2O3, for polycrystalline growth, or have the same lattice for monocrystalline growth, and the doping may be the same or different. Selected areas only may be grown. In the Example, n-doped monocrystalline Si plates, which were first annealed at 1200 DEG C. in H2, were used as source and carrier, and heated to 1100 and 1150 DEG C. respectively in I2 or SiI4 vapour.ALSO:Material is transferred by means of a transport gas at a sub-atmospheric pressure from one surface of a source plate to the adjacent surface of a carrier plate of the same or different material, located parallel to, in heat contact with, and at a higher temperature than, the source plate. The gas may be Cl2, Br2 or I2, a hydrogen halide, or a halide of the material being transferred or, for transfer of carbon, sulphur or a volatile sulphur compound, and may diluted with H2. The material transferred may be carbon, Si, B, Fe2O3, Cu2O or NbO. A pressure of 10 mm. Hg or below is used. The source of plate (6) may rest on the carrier (4) or be separated by an annular spacer 100-200m thick (7). The carrier rests on a heater (5) of carbon or SiC heated directly or indirectly (see Figs. 1 and 2, not shown). The carrier may be inert, e.g. SiO2 or Al2O3, fo polycrystalline growth, or have the same lattice for monocrystalline growth, and the doping may be the same or different. Selected areas only may be grown. In the example, n-doped monocrystalline Si plats, which were first annealed at 1200 DEG C. in H2, were used as source and carrier, and heated to 1100 DEG and 1150 DEG C. respectively in I2 or SiI4 vapour.
GB750365A 1964-02-21 1965-02-22 Improvements in or relating to processes for the productions of thin layers of metallic or semiconductor materials on carrier plates Expired GB1095294A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1964S0089627 DE1297080B (en) 1964-02-21 1964-02-21 Method for producing thin layers of metallic and / or semiconducting materials on a carrier

Publications (1)

Publication Number Publication Date
GB1095294A true GB1095294A (en) 1967-12-13

Family

ID=7515240

Family Applications (1)

Application Number Title Priority Date Filing Date
GB750365A Expired GB1095294A (en) 1964-02-21 1965-02-22 Improvements in or relating to processes for the productions of thin layers of metallic or semiconductor materials on carrier plates

Country Status (6)

Country Link
AT (1) AT253568B (en)
CH (1) CH478922A (en)
DE (1) DE1297080B (en)
GB (1) GB1095294A (en)
NL (1) NL6501271A (en)
SE (1) SE329315B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2164357A (en) * 1984-09-13 1986-03-19 Toshiba Ceramics Co Susceptor for supporting a silicon wafer
EP0201696A2 (en) * 1985-03-20 1986-11-20 Sharp Kabushiki Kaisha Production of carbon films

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2576916B1 (en) * 1985-02-01 1987-02-20 Centre Nat Rech Scient CONSTANTLY RENEWED GAS PHASE FORMATION PROCESS, WITH REDUCED PRESSURE, OF PROTECTIVE COATINGS ON PARTS OF REFRACTORY ALLOYS, AND DEVICE FOR ITS IMPLEMENTATION
FR2576917B1 (en) * 1985-02-01 1987-04-24 Centre Nat Rech Scient CASE FOR FORMING PROTECTIVE COATINGS ON PARTS OF REFRACTORY ALLOYS AND DEVICE FOR IMPLEMENTING SAME

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL268294A (en) * 1960-10-10

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2164357A (en) * 1984-09-13 1986-03-19 Toshiba Ceramics Co Susceptor for supporting a silicon wafer
EP0201696A2 (en) * 1985-03-20 1986-11-20 Sharp Kabushiki Kaisha Production of carbon films
EP0201696A3 (en) * 1985-03-20 1987-02-04 Sharp Kabushiki Kaisha Production of carbon films, graphite intercalation compound and doped carbon films

Also Published As

Publication number Publication date
CH478922A (en) 1969-09-30
AT253568B (en) 1967-04-10
DE1297080B (en) 1969-06-12
NL6501271A (en) 1965-08-23
SE329315B (en) 1970-10-05

Similar Documents

Publication Publication Date Title
US3072507A (en) Semiconductor body formation
GB1214272A (en) A process of preparing crystalline materials
GB996287A (en) Methods of producing thin films of semiconductor materials
GB987895A (en) Improvements in or relating to the production of semi-conductor arrangements
GB1095294A (en) Improvements in or relating to processes for the productions of thin layers of metallic or semiconductor materials on carrier plates
GB1023070A (en) Improvements in or relating to the manufacture of semi-conductor materials
GB1065074A (en) Epitaxial growth of semiconductor devices
US3491720A (en) Epitaxial deposition reactor
GB983004A (en) Improvements in and relating to methods of thermal treatment of semiconductor material
GB1019078A (en) Process for the production of a semiconductor assembly
US3425878A (en) Process of epitaxial growth wherein the distance between the carrier and the transfer material is adjusted to effect either material removal from the carrier surface or deposition thereon
NL279828A (en)
GB1045921A (en) Improvements in or relating to the evaporation of silicon
GB1076465A (en) Process for the preparation of crystalline semiconductor material
GB1004245A (en) Improvements in or relating to processes for the removal of semiconductor material deposited on a support in epitaxy processes
JPS577923A (en) Manufacture of receiving table for processing single silicon crystal wafer
GB1007555A (en) Semiconductor material
GB1077456A (en) Improvements in or relating to the manufacture of thin layers of high purity material
GB975767A (en) Improvements in or relating to the production of semi-conductor arrangements
GB1075387A (en) Improvements in semicuoductor device making
GB1070066A (en) Improvements in and relating to production of monocrystalline layers
JPS5681924A (en) Susceptor for vertical type high frequency heating vapor phase growing system
JPS5943815B2 (en) epitaxial growth method
US3420705A (en) Method of etching a semiconductor material
JPS55149194A (en) Manufacture of silicon carbide substrate