GB1088790A - Multiple junction semiconductor device - Google Patents
Multiple junction semiconductor deviceInfo
- Publication number
- GB1088790A GB1088790A GB3615066A GB3615066A GB1088790A GB 1088790 A GB1088790 A GB 1088790A GB 3615066 A GB3615066 A GB 3615066A GB 3615066 A GB3615066 A GB 3615066A GB 1088790 A GB1088790 A GB 1088790A
- Authority
- GB
- United Kingdom
- Prior art keywords
- phosphide
- arseno
- type
- silicon
- gallium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052733 gallium Inorganic materials 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 238000005299 abrasion Methods 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
Abstract
<FORM:1088790/C4-C5/1> The light-emitting diodes 5a are connected in series by evaporated gold deposits 6, 7. The diodes are formed on the high resistivity gallium arsenide substrate 1 by coating its upper surface with an N-type gallium arseno-phosphide layer 2 and silica layer 3, by removing in selected areas the silicon and arseno phosphide down to substrate level, by indiffusing impurities to form P-type parts 4, 7, by treating the assembly to completely remove P-type material from the right-hand sides of the means and adjacent portions of the troughs, and by applying the gold deposits. Removal of silicon and gallium arseno-phosphide may be accomplished by air-abrasion or by etching. The P-type parts may be provided by epitaxial deposition other than by diffusion.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB3615066A GB1088790A (en) | 1966-08-12 | 1966-08-12 | Multiple junction semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB3615066A GB1088790A (en) | 1966-08-12 | 1966-08-12 | Multiple junction semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1088790A true GB1088790A (en) | 1967-10-25 |
Family
ID=10385454
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB3615066A Expired GB1088790A (en) | 1966-08-12 | 1966-08-12 | Multiple junction semiconductor device |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1088790A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4255755A (en) | 1974-03-05 | 1981-03-10 | Matsushita Electric Industrial Co., Ltd. | Heterostructure semiconductor device having a top layer etched to form a groove to enable electrical contact with the lower layer |
GB2186425A (en) * | 1985-12-24 | 1987-08-12 | Fumio Inaba | Semiconductor light emitting device with vertical light emission |
EP1864338A1 (en) * | 2005-02-04 | 2007-12-12 | Seoul Opto Device Co., Ltd. | Light emitting device having a plurality of light emitting cells and method of fabricating the same |
-
1966
- 1966-08-12 GB GB3615066A patent/GB1088790A/en not_active Expired
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4255755A (en) | 1974-03-05 | 1981-03-10 | Matsushita Electric Industrial Co., Ltd. | Heterostructure semiconductor device having a top layer etched to form a groove to enable electrical contact with the lower layer |
GB2186425A (en) * | 1985-12-24 | 1987-08-12 | Fumio Inaba | Semiconductor light emitting device with vertical light emission |
US4797890A (en) * | 1985-12-24 | 1989-01-10 | Mitsubishi Cable Industries, Ltd. | Semiconductor light emitting device with vertical light emission |
GB2186425B (en) * | 1985-12-24 | 1989-10-18 | Fumio Inaba | Semiconductor light emitting device with vertical light emission |
EP1864338A1 (en) * | 2005-02-04 | 2007-12-12 | Seoul Opto Device Co., Ltd. | Light emitting device having a plurality of light emitting cells and method of fabricating the same |
EP1864338A4 (en) * | 2005-02-04 | 2010-01-20 | Seoul Opto Device Co Ltd | Light emitting device having a plurality of light emitting cells and method of fabricating the same |
EP2259318A3 (en) * | 2005-02-04 | 2014-01-08 | Seoul Opto Device Co., Ltd. | Light emitting device having a plurality of light emitting cells and method of fabricating the same |
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