GB1064310A - Apparatus and process for preparing semiconductor rods - Google Patents
Apparatus and process for preparing semiconductor rodsInfo
- Publication number
- GB1064310A GB1064310A GB43219/65A GB4321965A GB1064310A GB 1064310 A GB1064310 A GB 1064310A GB 43219/65 A GB43219/65 A GB 43219/65A GB 4321965 A GB4321965 A GB 4321965A GB 1064310 A GB1064310 A GB 1064310A
- Authority
- GB
- United Kingdom
- Prior art keywords
- rod
- rectifier
- stretching
- diameter
- zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- 239000003990 capacitor Substances 0.000 abstract 2
- 238000012544 monitoring process Methods 0.000 abstract 2
- 238000004857 zone melting Methods 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 230000006698 induction Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
In the zone-melting of a rod of germanium of silicon using an induction heating coil, the diameter of the resolidifying interface of the molten zone is maintained at a desired constant value by stretching or compressing the ends of the rod when the voltage across the coil varies from a value corresponding to the desired diameter. The diameter of the resolidified rod may be the same as or smaller than that of the charge rod. One or both ends of the rod may be rotated. The zone melting may be effected in a vacuum or an atmosphere of argon or hydrogen. In the production of a rod without stretching (Fig. 1), the monitoring circuit comprises measuring capacitors (20 and 21), a rectifier (22), and a cathode follower (23); and the control means comprises a polarised relay (25), a direct current source (27), and a motor (29). In the production of a rod with stretching (Fig. 2), the monitoring circuit comprises measuring capacitors (90 and 91), a rectifier (92), a cathode follower (93), and an amplifier (94); and the control means comprises an alternating current source (95-96), an adjustable auto-transformer (100), a rectifier (101) and a motor (74).
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US403490A US3321299A (en) | 1964-10-13 | 1964-10-13 | Apparatus and process for preparing semiconductor rods |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1064310A true GB1064310A (en) | 1967-04-05 |
Family
ID=23595971
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB43219/65A Expired GB1064310A (en) | 1964-10-13 | 1965-10-12 | Apparatus and process for preparing semiconductor rods |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US3321299A (en) |
| GB (1) | GB1064310A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3617392A (en) * | 1968-10-29 | 1971-11-02 | Semimetals Inc | Power control for crystal growing |
| DE2220519C3 (en) * | 1972-04-26 | 1982-03-11 | Siemens AG, 1000 Berlin und 8000 München | Process for crucible-free zone melting of semiconductor rods |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1153908B (en) * | 1958-04-22 | 1963-09-05 | Siemens Ag | Method and device for crucible-free zone melting with changing the spacing of the rod ends |
| NL252591A (en) * | 1959-08-17 | |||
| GB904100A (en) * | 1959-09-11 | 1962-08-22 | Siemens Ag | A process for zone-by-zone melting of a rod of semi-conductor material using an induction coil as the heating means and an automatic arrangement for controlling the current through the coil |
-
1964
- 1964-10-13 US US403490A patent/US3321299A/en not_active Expired - Lifetime
-
1965
- 1965-10-12 GB GB43219/65A patent/GB1064310A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3321299A (en) | 1967-05-23 |
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