GB1031833A - Process for treating tungsten - Google Patents

Process for treating tungsten

Info

Publication number
GB1031833A
GB1031833A GB1927063A GB1927063A GB1031833A GB 1031833 A GB1031833 A GB 1031833A GB 1927063 A GB1927063 A GB 1927063A GB 1927063 A GB1927063 A GB 1927063A GB 1031833 A GB1031833 A GB 1031833A
Authority
GB
United Kingdom
Prior art keywords
tungsten
gas
trichloro
silane
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1927063A
Inventor
Roger Moreton
William Watt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Power Jets Research and Development Ltd
Original Assignee
Power Jets Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Power Jets Research and Development Ltd filed Critical Power Jets Research and Development Ltd
Priority to GB1927063A priority Critical patent/GB1031833A/en
Publication of GB1031833A publication Critical patent/GB1031833A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32Carbides
    • C23C16/325Silicon carbide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Silicon Compounds (AREA)

Abstract

Silicon carbide is deposited on tungsten by heating to a temperature of 1200 to 1500 DEG C. in an atmosphere including methyl-trichloro-silane at a pressure of 1 to 76 cms. Hg. A carrier gas, e.g. hydrogen, may be used. The rate of flow of gas may be 500 c.c. per minute.ALSO:Silicon carbide is deposited on tungsten by heating to a temperature of 1200 DEG to 1500 DEG C. in an atmosphere including methyl-trichloro-silane at a pressure of 1 to 76 cm. Hg. A carrier gas, e.g. hydrogen, may be used. The rate of flow of gas may be 500 c.c. per minute.
GB1927063A 1963-05-15 1963-05-15 Process for treating tungsten Expired GB1031833A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB1927063A GB1031833A (en) 1963-05-15 1963-05-15 Process for treating tungsten

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1927063A GB1031833A (en) 1963-05-15 1963-05-15 Process for treating tungsten

Publications (1)

Publication Number Publication Date
GB1031833A true GB1031833A (en) 1966-06-02

Family

ID=10126607

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1927063A Expired GB1031833A (en) 1963-05-15 1963-05-15 Process for treating tungsten

Country Status (1)

Country Link
GB (1) GB1031833A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3642522A (en) * 1969-07-15 1972-02-15 Suisse Horlogerie Rech Lab Method for producing hard coatings on a surface
EP0599468A1 (en) * 1992-11-23 1994-06-01 Cvd Incorporated Chemical-vapor-deposition-produced silicon carbide

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3642522A (en) * 1969-07-15 1972-02-15 Suisse Horlogerie Rech Lab Method for producing hard coatings on a surface
EP0599468A1 (en) * 1992-11-23 1994-06-01 Cvd Incorporated Chemical-vapor-deposition-produced silicon carbide

Similar Documents

Publication Publication Date Title
ES386190A1 (en) Method for diffusion limited mass transport
ES418736A1 (en) Vapour saturated gas delivery
ES345029A1 (en) Method of producing crystalline silicon carbide whiskers
ES332724A1 (en) A procedure for the production of diolephins. (Machine-translation by Google Translate, not legally binding)
FR2248612B1 (en)
GB1031833A (en) Process for treating tungsten
JPS5212672A (en) Process for high temperature treatment of wastes
ES299154A1 (en) A procedure to activate the nickel catalysts (Machine-translation by Google Translate, not legally binding)
GB908860A (en) Improvements in and relating to the production of boron nitride coatings
JPS5263669A (en) Device for production of semiconductors
ES321376A1 (en) Method of production of forged silicon steel. (Machine-translation by Google Translate, not legally binding)
JPS525700A (en) The process for production of silicon nitride
JPS5250686A (en) Production of semiconductor device
JPS57197836A (en) Manufacture of semiconductor device
JPS51126037A (en) Semiconductor crystal growth method
JPS5326663A (en) Manu facture of semiconductor device
CH414633A (en) Process for preparing 3,4-di-acyl pyridoxines
JPS5571616A (en) Vapor phase growing treatment method
GB1086224A (en) Process for preparing 2,6-diformyl-tetrahydropyrane and 2-formyl-6-hydroxy-methyl-tetrahydropyrane
JPS522895A (en) Heating type trap for he gas refining
JPS5287368A (en) Production of semiconductor device
ES277669A1 (en) Procedure and device for the thermal treatment of a granulated material in gaseous current (Machine-translation by Google Translate, not legally binding)
KUSHIYA The angiographical studies of the gastric carcinomas
JPS51115299A (en) Formation process of silicon oxide film
JPS527884A (en) Process for treating exhaust gas