JPS51115299A - Formation process of silicon oxide film - Google Patents

Formation process of silicon oxide film

Info

Publication number
JPS51115299A
JPS51115299A JP50040899A JP4089975A JPS51115299A JP S51115299 A JPS51115299 A JP S51115299A JP 50040899 A JP50040899 A JP 50040899A JP 4089975 A JP4089975 A JP 4089975A JP S51115299 A JPS51115299 A JP S51115299A
Authority
JP
Japan
Prior art keywords
oxide film
silicon oxide
formation process
plasma treatment
gas plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50040899A
Other languages
Japanese (ja)
Inventor
Akira Nishimoto
Haruhiko Abe
Kuniaki Miyake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50040899A priority Critical patent/JPS51115299A/en
Publication of JPS51115299A publication Critical patent/JPS51115299A/en
Pending legal-status Critical Current

Links

Landscapes

  • Silicon Compounds (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:The formation process of silicon oxide film by the use of gas plasma treatment technique.
JP50040899A 1975-04-03 1975-04-03 Formation process of silicon oxide film Pending JPS51115299A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50040899A JPS51115299A (en) 1975-04-03 1975-04-03 Formation process of silicon oxide film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50040899A JPS51115299A (en) 1975-04-03 1975-04-03 Formation process of silicon oxide film

Publications (1)

Publication Number Publication Date
JPS51115299A true JPS51115299A (en) 1976-10-09

Family

ID=12593346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50040899A Pending JPS51115299A (en) 1975-04-03 1975-04-03 Formation process of silicon oxide film

Country Status (1)

Country Link
JP (1) JPS51115299A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61193456A (en) * 1985-02-21 1986-08-27 Toshiba Corp Manufacture of semiconductor element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61193456A (en) * 1985-02-21 1986-08-27 Toshiba Corp Manufacture of semiconductor element
JPH0380338B2 (en) * 1985-02-21 1991-12-24 Toshiba Kk

Similar Documents

Publication Publication Date Title
EG12464A (en) Process for the recovery of ethylene oxide from the gaseous effluent
JPS5329076A (en) Plasma treating apparatus of semiconductor substrates
JPS5362982A (en) Plasma cvd apparatus
JPS5227157A (en) Arm of industrial robbot
JPS51115299A (en) Formation process of silicon oxide film
JPS53114355A (en) Manufacture of semiconductor device
JPS5248468A (en) Process for production of semiconductor device
JPS5224485A (en) Quartz vibrator
JPS5221782A (en) Producing system and unit of semiconductor
JPS51138394A (en) Semiconductor device
JPS51140469A (en) Wafer cracking process
JPS51130171A (en) Semiconductor device
JPS5245868A (en) Process for production of plate-from silicone
JPS5228870A (en) Method for production of thin membrane
JPS5222473A (en) Panel measuring device
JPS51123593A (en) Deenergizer for film insulation material
JPS5219184A (en) Vapor source
JPS51147177A (en) A treatment method of tantaum oxide
JPS51134554A (en) Getter material
JPS5211190A (en) Treating method of slag
JPS5214142A (en) Cooling apparatus
JPS51146390A (en) Process for production of chromium sesquioxide
JPS5275985A (en) Apparatus for plasma treatment at low tempebature
JPS51149342A (en) Manufacturing transparent polypropylene sheets
JPS51146406A (en) Purification of aminoalcohols

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050506

A621 Written request for application examination

Effective date: 20050506

Free format text: JAPANESE INTERMEDIATE CODE: A621

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20081216

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20090311

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20090427

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090616

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Effective date: 20090728

Free format text: JAPANESE INTERMEDIATE CODE: A01

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090813

R150 Certificate of patent (=grant) or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120904

Year of fee payment: 3

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130904

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250