GB1029982A - Improvements in or relating to the manufacture of semiconductor devices - Google Patents

Improvements in or relating to the manufacture of semiconductor devices

Info

Publication number
GB1029982A
GB1029982A GB523163A GB523163A GB1029982A GB 1029982 A GB1029982 A GB 1029982A GB 523163 A GB523163 A GB 523163A GB 523163 A GB523163 A GB 523163A GB 1029982 A GB1029982 A GB 1029982A
Authority
GB
United Kingdom
Prior art keywords
relating
manufacture
semiconductor devices
metals
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB523163A
Inventor
Henley Frank Sterling
Cyril Francis Drake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL302321D priority Critical patent/NL302321A/xx
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB523163A priority patent/GB1029982A/en
Priority to DEST21634A priority patent/DE1276824B/en
Priority to FR962821A priority patent/FR1381871A/en
Priority to BE643484D priority patent/BE643484A/xx
Publication of GB1029982A publication Critical patent/GB1029982A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Metals such as W, Mo, TaNb and Pt group metals e.g. Os and Ir are deposited on a semi-conductor substrate such as Si by the decomposition of the vapour of a volatile compound of the metal, said metals having a coefficient of expansion matching that of the semi-conductor. In an example W or Mo are deposited on Si by the thermal decomposition of the halides on carbonyls at 1300 DEG C.
GB523163A 1963-02-08 1963-02-08 Improvements in or relating to the manufacture of semiconductor devices Expired GB1029982A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
NL302321D NL302321A (en) 1963-02-08
GB523163A GB1029982A (en) 1963-02-08 1963-02-08 Improvements in or relating to the manufacture of semiconductor devices
DEST21634A DE1276824B (en) 1963-02-08 1964-02-01 Method for producing an ohmic contact on a semiconductor body
FR962821A FR1381871A (en) 1963-02-08 1964-02-06 Semiconductor manufacturing method
BE643484D BE643484A (en) 1963-02-08 1964-02-07

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB523163A GB1029982A (en) 1963-02-08 1963-02-08 Improvements in or relating to the manufacture of semiconductor devices

Publications (1)

Publication Number Publication Date
GB1029982A true GB1029982A (en) 1966-05-18

Family

ID=9792180

Family Applications (1)

Application Number Title Priority Date Filing Date
GB523163A Expired GB1029982A (en) 1963-02-08 1963-02-08 Improvements in or relating to the manufacture of semiconductor devices

Country Status (4)

Country Link
BE (1) BE643484A (en)
DE (1) DE1276824B (en)
GB (1) GB1029982A (en)
NL (1) NL302321A (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE509317A (en) * 1951-03-07 1900-01-01
DE966906C (en) * 1953-04-09 1957-09-19 Siemens Ag Method for non-blocking contacting of surface rectifiers or transistors with a semiconductor single crystal having a p-n layer
NL98125C (en) * 1954-08-26 1900-01-01
US2913813A (en) * 1955-06-22 1959-11-24 Ohio Commw Eng Co Composite metal product
AT222702B (en) * 1960-06-13 1962-08-10 Siemens Ag Method for manufacturing a semiconductor device

Also Published As

Publication number Publication date
BE643484A (en) 1964-08-07
DE1276824B (en) 1968-09-05
NL302321A (en)

Similar Documents

Publication Publication Date Title
GB839082A (en) Improvements in or relating to processes for making transistors
GB988897A (en) Epitaxial growth process
NL154868B (en) PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES OBTAINED ACCORDING TO THIS PROCESS.
NL139843B (en) PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES, AS WELL AS SEMI-CONDUCTOR DEVICES MANUFACTURED THEREFORE.
GB1029982A (en) Improvements in or relating to the manufacture of semiconductor devices
NL143198B (en) PROCESS FOR THE PREPARATION OF CUBIC BORON NITRIDE.
GB998199A (en) Improvements in or relating to the manufacture of semiconductor devices
GB1119050A (en) Improvements in or relating to the manufacture of semiconductor devices by epitaxialdeposition
GB1125650A (en) Insulating layers and devices incorporating such layers
GB1075555A (en) Process for the formation of a layer of a semiconductor material on a crystalline base
GB1087222A (en) 12-nitronaphthindolizinediones and processes for their manufacture
GB1056720A (en) Improved method of epitaxially vapour depositing semiconductor material
GB991906A (en) Alpha probe window
NL142525B (en) PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR BODIES, AS WELL AS SEMICONDUCTOR BODIES OBTAINED BY THIS PROCESS.
GB1214686A (en) Improvements in or relating to silicon semi-conductor devices
GB1010308A (en) Semiconductor product
HEMENWAY et al. Nike-cajun sounding rockets used for particle sampling from noctilucent clouds at the mesopause region of the atmosphere
MALYSHEV et al. Spectroscopic measurements of electron temperatures in the alfa plasma device
STUBBERUD Technique for synthesizing linear nonstationary feedback systems has been developed, including both the approximation problem and the synthesis problem
MORIMOTO Proof of boltzmanns h-theorem utilizing markov processes and probability theory
BUXTON et al. Grueneisen data from the one-dimensional thermoelastic response of elastic materials(Gruneisen parameter for metal and semiconductor single crystals obtained from measuring one dimensional thermoelastic response during exposure to pulsed electron beam)
GB1070288A (en) Semiconductor devices
Shershkov One method of computing the meteorological variables for mesoscale processes
FR1291894A (en) Cast alloys based on tungsten or molybdenum, or on tungsten and molybdenum, and process for the manufacture of such cast alloys
田村誠男 et al. 2p-C-10 The Initial Stages of Chemical Vapor Deposited Si on Sapphire