GB1003365A - Method of preparing a photo-sensitive resistive coating - Google Patents
Method of preparing a photo-sensitive resistive coatingInfo
- Publication number
- GB1003365A GB1003365A GB19032/62A GB1903262A GB1003365A GB 1003365 A GB1003365 A GB 1003365A GB 19032/62 A GB19032/62 A GB 19032/62A GB 1903262 A GB1903262 A GB 1903262A GB 1003365 A GB1003365 A GB 1003365A
- Authority
- GB
- United Kingdom
- Prior art keywords
- photo
- cadmium sulphide
- copper
- selenide
- sintering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 2
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 abstract 2
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 abstract 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 abstract 2
- 238000002425 crystallisation Methods 0.000 abstract 2
- 230000008025 crystallization Effects 0.000 abstract 2
- 238000005245 sintering Methods 0.000 abstract 2
- BKQMNPVDJIHLPD-UHFFFAOYSA-N OS(=O)(=O)[Se]S(O)(=O)=O Chemical compound OS(=O)(=O)[Se]S(O)(=O)=O BKQMNPVDJIHLPD-UHFFFAOYSA-N 0.000 abstract 1
- 239000012190 activator Substances 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 1
- FRLJSGOEGLARCA-UHFFFAOYSA-N cadmium sulfide Chemical class [S-2].[Cd+2] FRLJSGOEGLARCA-UHFFFAOYSA-N 0.000 abstract 1
- 239000012159 carrier gas Substances 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 abstract 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 abstract 1
- 229910000039 hydrogen halide Inorganic materials 0.000 abstract 1
- 239000012433 hydrogen halide Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 230000001737 promoting effect Effects 0.000 abstract 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000000725 suspension Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photoreceptors In Electrophotography (AREA)
- Chemically Coating (AREA)
Abstract
A photo-conductive layer of activated cadmium sulphide, selenide, or sulphoselenide is formed by applying finely divided cadmium sulphide and/or selenide and a copper or silver salt as activator material to a support and sintering in the presence of a gaseous crystallization promoting substance. The crystallization promoter may be a hydrogen halide, e.g. hydrogen chloride introduced into the reaction chamber in a carrier gas, or introduced as hydrochloric acid or hydrozine dihydrochloride prior to sintering. In a typical method a suspension of cadmium sulphide powder in water and sufficient copper chloride solution to give a ratio of 1 copper atom per 104 atoms of cadmium, are sprayed on a ceramic support and heated at 600 DEG C. for 15 minutes in a closed dish containing hydrochloric acid. The particles, initially of about 0.5 diameter, form into a sintered mass of crystals of 4 to 10 diameter.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEF0034022 | 1961-05-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1003365A true GB1003365A (en) | 1965-09-02 |
Family
ID=7095374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB19032/62A Expired GB1003365A (en) | 1961-05-26 | 1962-05-17 | Method of preparing a photo-sensitive resistive coating |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US3222215A (en) |
| GB (1) | GB1003365A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2170653A (en) * | 1985-02-06 | 1986-08-06 | Sharp Kk | Production of photoelectric conversion film and contact type image sensor |
| GB2178897A (en) * | 1985-08-08 | 1987-02-18 | Sharp Kk | Method of making photo-electric converting elements |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3357857A (en) * | 1964-05-08 | 1967-12-12 | Philips Corp | Method of passivating supports for semiconductor sulphides, selenides and tellurides |
| US3480473A (en) * | 1966-06-24 | 1969-11-25 | Kewanee Oil Co | Method of producing polycrystalline photovoltaic cells |
| CH540580A (en) * | 1970-11-23 | 1973-08-15 | Siemens Ag | Process for the manufacture of a thermal generator |
| US3754985A (en) * | 1971-04-05 | 1973-08-28 | Photophysics | Process for making a sintered photoconductive body |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1072095B (en) * | 1959-12-24 | |||
| FR1077509A (en) * | 1951-04-20 | 1954-11-09 | France Etat | Process of homogenization and activation of semiconductor crystals and semiconductor layers |
| GB861021A (en) * | 1956-05-31 | 1961-02-15 | Rauland Corp | Improvements in or relating to photosensitive semiconductor devices |
| US2996402A (en) * | 1957-04-02 | 1961-08-15 | Davohn Corp | Method for making zinc sulfide luminescent screens |
| US2948635A (en) * | 1959-01-12 | 1960-08-09 | Gen Electric | Phosphor evaporation method and apparatus |
-
1962
- 1962-05-17 GB GB19032/62A patent/GB1003365A/en not_active Expired
- 1962-05-23 US US196900A patent/US3222215A/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2170653A (en) * | 1985-02-06 | 1986-08-06 | Sharp Kk | Production of photoelectric conversion film and contact type image sensor |
| GB2170653B (en) * | 1985-02-06 | 1989-03-22 | Sharp Kk | Production of photoelectric conversion film and contact type image sensor |
| GB2178897A (en) * | 1985-08-08 | 1987-02-18 | Sharp Kk | Method of making photo-electric converting elements |
| US4701997A (en) * | 1985-08-08 | 1987-10-27 | Sharp Kabushiki Kaisha | Method of making photo-electric converting elements |
| GB2178897B (en) * | 1985-08-08 | 1989-10-04 | Sharp Kk | Method of making photo-electric converting elements |
Also Published As
| Publication number | Publication date |
|---|---|
| US3222215A (en) | 1965-12-07 |
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