GB0412446D0 - High burst rate write data paths for integrated circuit memory devices and methods of operating same - Google Patents
High burst rate write data paths for integrated circuit memory devices and methods of operating sameInfo
- Publication number
- GB0412446D0 GB0412446D0 GBGB0412446.7A GB0412446A GB0412446D0 GB 0412446 D0 GB0412446 D0 GB 0412446D0 GB 0412446 A GB0412446 A GB 0412446A GB 0412446 D0 GB0412446 D0 GB 0412446D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- methods
- integrated circuit
- memory devices
- write data
- data paths
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1018—Serial bit line access mode, e.g. using bit line address shift registers, bit line address counters, bit line burst counters
- G11C7/1027—Static column decode serial bit line access mode, i.e. using an enabled row address stroke pulse with its associated word line address and a sequence of enabled bit line addresses
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M9/00—Parallel/series conversion or vice versa
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/10—Aspects relating to interfaces of memory device to external buses
- G11C2207/107—Serial-parallel conversion of data or prefetch
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0625943A GB2433626B (en) | 2003-06-03 | 2004-06-03 | High burst rate write data paths for integrated circuit memory devices and methods of operating same |
GB0625944A GB2433627B (en) | 2003-06-03 | 2004-06-03 | High burst rate write data paths for integrated circuit memory devices and methods of operating same |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20030035604 | 2003-06-03 | ||
KR10-2003-0042840A KR100532444B1 (en) | 2003-06-03 | 2003-06-27 | Memory device implementing 2N bit prefetch scheme using N bit prefetch structure and 2N bit prefetching method and auto-precharge method |
US10/792,425 US7054202B2 (en) | 2003-06-03 | 2004-03-03 | High burst rate write data paths for integrated circuit memory devices and methods of operating same |
Publications (3)
Publication Number | Publication Date |
---|---|
GB0412446D0 true GB0412446D0 (en) | 2004-07-07 |
GB2403575A GB2403575A (en) | 2005-01-05 |
GB2403575B GB2403575B (en) | 2007-05-16 |
Family
ID=33545117
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0412446A Expired - Fee Related GB2403575B (en) | 2003-06-03 | 2004-06-03 | High burst rate write data paths for integrated circuit memory devices and methods of operating same |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4819325B2 (en) |
DE (1) | DE102004026526B4 (en) |
GB (1) | GB2403575B (en) |
TW (1) | TWI250530B (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005001894A1 (en) | 2005-01-14 | 2006-08-03 | Infineon Technologies Ag | Synchronous parallel-to-serial converter |
JP5052056B2 (en) * | 2005-09-29 | 2012-10-17 | エスケーハイニックス株式会社 | Data input device for semiconductor memory device |
JP4470183B2 (en) | 2006-08-28 | 2010-06-02 | エルピーダメモリ株式会社 | Semiconductor memory device |
KR20080065100A (en) | 2007-01-08 | 2008-07-11 | 주식회사 하이닉스반도체 | Semiconductor memory device and operation method thereof |
KR101094946B1 (en) | 2010-01-29 | 2011-12-15 | 주식회사 하이닉스반도체 | Semiconductor Integrated Circuit |
JP2013206492A (en) * | 2012-03-27 | 2013-10-07 | Toshiba Corp | Semiconductor device and driving method thereof |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59180871A (en) * | 1983-03-31 | 1984-10-15 | Fujitsu Ltd | Semiconductor memory device |
US4745577A (en) * | 1984-11-20 | 1988-05-17 | Fujitsu Limited | Semiconductor memory device with shift registers for high speed reading and writing |
JPH0740430B2 (en) * | 1986-07-04 | 1995-05-01 | 日本電気株式会社 | Memory device |
US5854767A (en) * | 1994-10-28 | 1998-12-29 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory device having a plurality of blocks each including a parallel/serial conversion circuit |
JP3788867B2 (en) * | 1997-10-28 | 2006-06-21 | 株式会社東芝 | Semiconductor memory device |
US6459393B1 (en) * | 1998-05-08 | 2002-10-01 | International Business Machines Corporation | Apparatus and method for optimized self-synchronizing serializer/deserializer/framer |
JP2000163969A (en) * | 1998-09-16 | 2000-06-16 | Fujitsu Ltd | Semiconductor storage |
DE19951677B4 (en) * | 1998-10-30 | 2006-04-13 | Fujitsu Ltd., Kawasaki | Semiconductor memory device |
JP3859885B2 (en) * | 1998-11-24 | 2006-12-20 | Necエレクトロニクス株式会社 | Semiconductor memory device |
JP4083944B2 (en) * | 1999-12-13 | 2008-04-30 | 東芝マイクロエレクトロニクス株式会社 | Semiconductor memory device |
-
2004
- 2004-05-25 DE DE102004026526A patent/DE102004026526B4/en not_active Expired - Fee Related
- 2004-05-31 JP JP2004161460A patent/JP4819325B2/en not_active Expired - Fee Related
- 2004-06-03 GB GB0412446A patent/GB2403575B/en not_active Expired - Fee Related
- 2004-06-03 TW TW093115984A patent/TWI250530B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
GB2403575A (en) | 2005-01-05 |
TWI250530B (en) | 2006-03-01 |
DE102004026526B4 (en) | 2010-09-23 |
JP2004362756A (en) | 2004-12-24 |
GB2403575B (en) | 2007-05-16 |
TW200516595A (en) | 2005-05-16 |
DE102004026526A1 (en) | 2005-01-13 |
JP4819325B2 (en) | 2011-11-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20150603 |