FR77610E - Dispositif semi-conducteur - Google Patents

Dispositif semi-conducteur

Info

Publication number
FR77610E
FR77610E FR825415A FR825415A FR77610E FR 77610 E FR77610 E FR 77610E FR 825415 A FR825415 A FR 825415A FR 825415 A FR825415 A FR 825415A FR 77610 E FR77610 E FR 77610E
Authority
FR
France
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR825415A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Priority to FR825415A priority Critical patent/FR77610E/fr
Application granted granted Critical
Publication of FR77610E publication Critical patent/FR77610E/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391Gated diode structures
    • H01L29/7392Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K4/00Generating pulses having essentially a finite slope or stepped portions
    • H03K4/06Generating pulses having essentially a finite slope or stepped portions having triangular shape
    • H03K4/08Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
    • H03K4/83Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices with more than two PN junctions or with more than three electrodes or more than one electrode connected to the same conductivity region
    • H03K4/84Generators in which the semiconductor device is conducting during the fly-back part of the cycle

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
FR825415A 1958-02-15 1960-04-27 Dispositif semi-conducteur Expired FR77610E (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR825415A FR77610E (fr) 1958-02-15 1960-04-27 Dispositif semi-conducteur

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NL224962 1958-02-15
NL238689 1959-04-28
FR825415A FR77610E (fr) 1958-02-15 1960-04-27 Dispositif semi-conducteur

Publications (1)

Publication Number Publication Date
FR77610E true FR77610E (fr) 1962-03-30

Family

ID=27245475

Family Applications (1)

Application Number Title Priority Date Filing Date
FR825415A Expired FR77610E (fr) 1958-02-15 1960-04-27 Dispositif semi-conducteur

Country Status (1)

Country Link
FR (1) FR77610E (fr)

Similar Documents

Publication Publication Date Title
CH380824A (fr) Dispositif semi-conducteur
FR1245294A (fr) Dispositif semi-conducteur
FR1242628A (fr) Dispositif de translation semi-conducteur
FR1193364A (fr) Dispositif semi-conducteur
CH384080A (de) Halbleiteranordnung
FR1202962A (fr) Dispositif semi-conducteur
FR1232808A (fr) Dispositif électroluminescent
FR1204885A (fr) Dispositif semi-conducteur
FR1225032A (fr) Dispositif semi-conducteur
FR76972E (fr) Dispositif semi-conducteur
FR1267686A (fr) Dispositif semi-conducteur
FR1224541A (fr) Perfectionnement au dispositif semi-conducteur
FR1229784A (fr) Dispositif semi-conducteur
FR1245603A (fr) Dispositif semi-conducteur
FR1216321A (fr) Dispositif perfectionné de retordage-câblage
FR1223677A (fr) Dispositif optico-électronique
FR1228364A (fr) Dispositif semi-conducteur
FR1213072A (fr) Dispositif remplisseur-prétasseur
FR1244077A (fr) Dispositif semi-conducteur
FR1268801A (fr) Dispositif semi-conducteur
FR1306203A (fr) Dispositif semiconducteur perfectionné
FR84006E (fr) Dispositif semi-conducteur
FR77610E (fr) Dispositif semi-conducteur
FR1221176A (fr) Dispositif semi-conducteur
CH370843A (fr) Dispositif semi-conducteur