FR3102007B1 - Capteur d’images - Google Patents

Capteur d’images Download PDF

Info

Publication number
FR3102007B1
FR3102007B1 FR1911402A FR1911402A FR3102007B1 FR 3102007 B1 FR3102007 B1 FR 3102007B1 FR 1911402 A FR1911402 A FR 1911402A FR 1911402 A FR1911402 A FR 1911402A FR 3102007 B1 FR3102007 B1 FR 3102007B1
Authority
FR
France
Prior art keywords
image sensor
pixel
rows
pitch
columns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1911402A
Other languages
English (en)
Other versions
FR3102007A1 (fr
Inventor
Jérôme Vaillant
Lucie Dilhan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1911402A priority Critical patent/FR3102007B1/fr
Priority to CN202011095830.9A priority patent/CN112736100A/zh
Priority to CN202022280879.3U priority patent/CN215220725U/zh
Priority to US17/070,537 priority patent/US11764242B2/en
Publication of FR3102007A1 publication Critical patent/FR3102007A1/fr
Application granted granted Critical
Publication of FR3102007B1 publication Critical patent/FR3102007B1/fr
Priority to US18/364,415 priority patent/US20240030255A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

Capteur d’images La présente description concerne un capteur d’images (200) comportant une pluralité de pixels (P) formés dans et sur un substrat semiconducteur (101) et agencés en matrice selon N lignes et M colonnes, avec N entier supérieur ou égal à 1 et M entier supérieur ou égal à 2, et, pour chaque pixel, une microlentille (L) associée au pixel, disposée en vis-à-vis du substrat, les microlentilles étant agencées en matrice selon N lignes et M colonnes, dans lequel, dans la direction des lignes de la matrice de pixels, le pas de la matrice de microlentilles est supérieur au pas de la matrice de pixels. Figure pour l'abrégé : Fig. 2
FR1911402A 2019-10-14 2019-10-14 Capteur d’images Active FR3102007B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1911402A FR3102007B1 (fr) 2019-10-14 2019-10-14 Capteur d’images
CN202011095830.9A CN112736100A (zh) 2019-10-14 2020-10-14 图像传感器
CN202022280879.3U CN215220725U (zh) 2019-10-14 2020-10-14 图像传感器
US17/070,537 US11764242B2 (en) 2019-10-14 2020-10-14 Image sensor with pixel matrix and microlens matrix having differing pitches from each other
US18/364,415 US20240030255A1 (en) 2019-10-14 2023-08-02 Image sensor with pixel matrix and microlens matrix having differing pitches from each other

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1911402 2019-10-14
FR1911402A FR3102007B1 (fr) 2019-10-14 2019-10-14 Capteur d’images

Publications (2)

Publication Number Publication Date
FR3102007A1 FR3102007A1 (fr) 2021-04-16
FR3102007B1 true FR3102007B1 (fr) 2021-10-29

Family

ID=69173025

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1911402A Active FR3102007B1 (fr) 2019-10-14 2019-10-14 Capteur d’images

Country Status (3)

Country Link
US (2) US11764242B2 (fr)
CN (2) CN112736100A (fr)
FR (1) FR3102007B1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202238971A (zh) * 2021-03-18 2022-10-01 神盾股份有限公司 光感測模組
US20220359772A1 (en) * 2021-05-10 2022-11-10 Samsung Electronics Co., Ltd. Methods and system of enhanced near-infrared light absorption of imaging systems using metasurfaces and nanostructures
US20230197750A1 (en) 2021-12-17 2023-06-22 Semiconductor Components Industries, Llc Single-photon avalanche diode covered by multiple microlenses

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100679856B1 (ko) * 2005-06-09 2007-02-07 (주) 픽셀플러스 좌우상하 비율에 따라 서로 다른 비율로 배치되는마이크로렌즈를 포함하는 이미지 센서
DE102006004802B4 (de) * 2006-01-23 2008-09-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Bilderfassungssystem und Verfahren zur Herstellung mindestens eines Bilderfassungssystems
FR2974188A1 (fr) * 2011-04-18 2012-10-19 St Microelectronics Sa Dispositif elementaire d'acquisition ou de restitution d'image
EP2717561B1 (fr) * 2011-05-24 2019-03-27 Sony Semiconductor Solutions Corporation Élément d'imagerie à semi-conducteur et système de caméra
JP2015129894A (ja) * 2014-01-09 2015-07-16 セイコーエプソン株式会社 マイクロレンズアレイ、マイクロレンズアレイの製造方法、電気光学装置、及び電子機器
US11477403B2 (en) * 2018-07-09 2022-10-18 Sony Semiconductor Solutions Corporation Imaging element and method for manufacturing imaging element
CN112585506A (zh) * 2018-08-15 2021-03-30 3M创新有限公司 包括微透镜阵列的光学元件
DK3620829T3 (da) * 2018-09-07 2022-02-14 Sick Ag Lysgitter

Also Published As

Publication number Publication date
US11764242B2 (en) 2023-09-19
CN215220725U (zh) 2021-12-17
FR3102007A1 (fr) 2021-04-16
US20210111211A1 (en) 2021-04-15
CN112736100A (zh) 2021-04-30
US20240030255A1 (en) 2024-01-25

Similar Documents

Publication Publication Date Title
FR3102007B1 (fr) Capteur d’images
SE1751613A1 (en) Biometric imaging device and method for manufacturing the biometric imaging device
CN1658397A (zh) 固态成像装置和信号处理电路
KR970054279A (ko) 고체촬상장치
EP1592066A3 (fr) Détecteur d'image à l'état solide
JP2007243197A5 (fr)
WO2018082156A1 (fr) Capteur d'image à très haute résolution et procédé de construction associé
JP2007311413A (ja) 固体撮像装置およびその製造方法、電子情報機器
CN100481478C (zh) 放大式固体摄像器件
CN1731585A (zh) Cmos图像传感器
JP2010520662A5 (fr)
KR100318637B1 (ko) 고체촬상장치 및 그 검사방법과 제조방법
CN112711976A (zh) 光学指纹感测器
US11728359B2 (en) Image sensor having two-colored color filters sharing one photodiode
JPS6338865B2 (fr)
KR890002896A (ko) Ccd 시프트-레지스터를 사용한 병렬-직렬 변환기
US10068940B2 (en) Imaging apparatus with focus-ranging precision in one direction due to saturated photoelectric conversion elements located adjacent to each other
JPH0677450A (ja) 固体撮像素子
JP2022120551A5 (fr)
JPS60119182A (ja) 固体撮像素子
JP2020113573A5 (fr)
EP3951878A3 (fr) Capteur d'image et appareil de capture d'image
US11195871B2 (en) Image sensing device
CN1684270A (zh) 线性图像传感器
KR20050084270A (ko) 고체 촬상소자 및 고체 촬상소자의 제조방법

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20210416

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 5