FR3100924B1 - Traitement d’un film mince par plasma d’hydrogène et polarisation pour en améliorer la qualité cristalline - Google Patents

Traitement d’un film mince par plasma d’hydrogène et polarisation pour en améliorer la qualité cristalline Download PDF

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Publication number
FR3100924B1
FR3100924B1 FR1910128A FR1910128A FR3100924B1 FR 3100924 B1 FR3100924 B1 FR 3100924B1 FR 1910128 A FR1910128 A FR 1910128A FR 1910128 A FR1910128 A FR 1910128A FR 3100924 B1 FR3100924 B1 FR 3100924B1
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France
Prior art keywords
thin film
polarization
improve
treatment
plasma
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Active
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FR1910128A
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English (en)
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FR3100924A1 (fr
Inventor
Julien Delchevalrie
Jean-Charles Arnault
Samuel Saada
Romain Bachelet
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1910128A priority Critical patent/FR3100924B1/fr
Priority to EP20785807.7A priority patent/EP4029051A1/fr
Priority to PCT/FR2020/051573 priority patent/WO2021048507A1/fr
Priority to US17/642,530 priority patent/US11898239B2/en
Priority to JP2022516129A priority patent/JP2022548051A/ja
Publication of FR3100924A1 publication Critical patent/FR3100924A1/fr
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Publication of FR3100924B1 publication Critical patent/FR3100924B1/fr
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/584—Non-reactive treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/279—Diamond only control of diamond crystallography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments

Abstract

L’invention concerne un procédé de traitement d’un film mince en un matériau conducteur ou semi-conducteur pour en améliorer la qualité cristalline. Il comprend : - la fourniture d’un substrat comportant, sur l’une de ses faces, un film mince dudit matériau ; et - le traitement sous plasma polarisé de l’ensemble formé par le substrat et le film mince à une température et pendant une durée déterminées, de manière à obtenir une réorganisation cristalline sur une profondeur du film mince, le traitement sous plasma polarisé comprenant une polarisation électrique du film mince et une exposition du film ainsi polarisé à un plasma d’hydrogène, le traitement sous plasma polarisé étant réalisé à une température qui est inférieure aux températures de fusion du film mince et du substrat. Figure pour l’abrégé : aucune .
FR1910128A 2019-09-13 2019-09-13 Traitement d’un film mince par plasma d’hydrogène et polarisation pour en améliorer la qualité cristalline Active FR3100924B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1910128A FR3100924B1 (fr) 2019-09-13 2019-09-13 Traitement d’un film mince par plasma d’hydrogène et polarisation pour en améliorer la qualité cristalline
EP20785807.7A EP4029051A1 (fr) 2019-09-13 2020-09-11 Traitement d'un film mince par plasma d'hydrogene et polarisation pour en ameliorer la qualite cristalline
PCT/FR2020/051573 WO2021048507A1 (fr) 2019-09-13 2020-09-11 Traitement d'un film mince par plasma d'hydrogene et polarisation pour en ameliorer la qualite cristalline
US17/642,530 US11898239B2 (en) 2019-09-13 2020-09-11 Treatment of a thin film by hydrogen plasma and polarisation in order to improve the crystalline quality thereof
JP2022516129A JP2022548051A (ja) 2019-09-13 2020-09-11 水素プラズマと分極化による薄膜の結晶品質を向上させるための処理

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1910128 2019-09-13
FR1910128A FR3100924B1 (fr) 2019-09-13 2019-09-13 Traitement d’un film mince par plasma d’hydrogène et polarisation pour en améliorer la qualité cristalline

Publications (2)

Publication Number Publication Date
FR3100924A1 FR3100924A1 (fr) 2021-03-19
FR3100924B1 true FR3100924B1 (fr) 2022-02-04

Family

ID=69903221

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1910128A Active FR3100924B1 (fr) 2019-09-13 2019-09-13 Traitement d’un film mince par plasma d’hydrogène et polarisation pour en améliorer la qualité cristalline

Country Status (5)

Country Link
US (1) US11898239B2 (fr)
EP (1) EP4029051A1 (fr)
JP (1) JP2022548051A (fr)
FR (1) FR3100924B1 (fr)
WO (1) WO2021048507A1 (fr)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10320133B4 (de) * 2003-05-06 2011-02-10 Universität Augsburg Verfahren zur Herstellung von einkristallinen oder quasi-einkristallinen Diamantschichten und auf einem Körper angeordnete einkristalline oder quasi-einkristalline Diamantschicht
JP4769428B2 (ja) * 2004-05-25 2011-09-07 厚仁 澤邊 ダイヤモンド膜成長基板の形成方法
JP5053553B2 (ja) * 2006-03-08 2012-10-17 信越化学工業株式会社 単結晶ダイヤモンド成長用基材の製造方法
FR2940326B1 (fr) * 2008-12-19 2011-03-25 Centre Nat Rech Scient Procede de fabrication de materiaux composites diamantes
KR102192283B1 (ko) * 2010-11-04 2020-12-17 닛산 가가쿠 가부시키가이샤 플라즈마 어닐링 방법 및 그 장치
DE102017205417A1 (de) * 2017-03-30 2018-10-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Ausbildung einer mit poly- oder einkristallinem Diamant gebildeten Schicht
DE102017127010B4 (de) * 2017-11-16 2021-12-09 Infineon Technologies Ag Verbundwafer und Verfahren zur Herstellung eines Halbleiterbauelements

Also Published As

Publication number Publication date
FR3100924A1 (fr) 2021-03-19
US20220325405A1 (en) 2022-10-13
WO2021048507A1 (fr) 2021-03-18
US11898239B2 (en) 2024-02-13
JP2022548051A (ja) 2022-11-16
EP4029051A1 (fr) 2022-07-20

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