FR3098988B1 - Capteur d'image - Google Patents

Capteur d'image Download PDF

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Publication number
FR3098988B1
FR3098988B1 FR1908191A FR1908191A FR3098988B1 FR 3098988 B1 FR3098988 B1 FR 3098988B1 FR 1908191 A FR1908191 A FR 1908191A FR 1908191 A FR1908191 A FR 1908191A FR 3098988 B1 FR3098988 B1 FR 3098988B1
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France
Prior art keywords
substrate
region
image sensor
charge collection
photosensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1908191A
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English (en)
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FR3098988A1 (fr
Inventor
Francois Roy
Andrej Suler
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STMicroelectronics Crolles 2 SAS
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STMicroelectronics Crolles 2 SAS
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Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR1908191A priority Critical patent/FR3098988B1/fr
Priority to US16/925,248 priority patent/US11901381B2/en
Priority to CN202021414996.8U priority patent/CN214336715U/zh
Priority to CN202010691031.1A priority patent/CN112242410A/zh
Publication of FR3098988A1 publication Critical patent/FR3098988A1/fr
Application granted granted Critical
Publication of FR3098988B1 publication Critical patent/FR3098988B1/fr
Priority to US18/391,222 priority patent/US20240128289A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14638—Structures specially adapted for transferring the charges across the imager perpendicular to the imaging plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

Capteur d'image La présente description concerne un capteur d'image comprenant une pluralité de pixels (1) comportant chacun : une région photosensible (105) dopée d'un premier type de conductivité s'étendant verticalement dans un substrat semiconducteur (100) ; une région (110) de collection de charges plus fortement dopée du premier type de conductivité que la région photosensible, s'étendant verticalement dans le substrat à partir d'une face supérieure (106) du substrat et étant disposée au-dessus de la région photosensible ; et un empilement vertical comprenant une grille verticale de transfert (115) et un mur vertical d'isolation électrique (116), l'empilement traversant le substrat et étant au contact de la région de collection de charges, la grille étant disposée du côté de la face supérieure du substrat et pénétrant dans le substrat plus profondément que la région de collection de charges. Figure pour l'abrégé : Fig. 1
FR1908191A 2019-07-19 2019-07-19 Capteur d'image Active FR3098988B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1908191A FR3098988B1 (fr) 2019-07-19 2019-07-19 Capteur d'image
US16/925,248 US11901381B2 (en) 2019-07-19 2020-07-09 Image sensor
CN202021414996.8U CN214336715U (zh) 2019-07-19 2020-07-17 图像传感器和成像像素
CN202010691031.1A CN112242410A (zh) 2019-07-19 2020-07-17 图像传感器
US18/391,222 US20240128289A1 (en) 2019-07-19 2023-12-20 Image sensor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1908191 2019-07-19
FR1908191A FR3098988B1 (fr) 2019-07-19 2019-07-19 Capteur d'image

Publications (2)

Publication Number Publication Date
FR3098988A1 FR3098988A1 (fr) 2021-01-22
FR3098988B1 true FR3098988B1 (fr) 2022-08-26

Family

ID=68072805

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1908191A Active FR3098988B1 (fr) 2019-07-19 2019-07-19 Capteur d'image

Country Status (3)

Country Link
US (2) US11901381B2 (fr)
CN (2) CN112242410A (fr)
FR (1) FR3098988B1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3098988B1 (fr) * 2019-07-19 2022-08-26 St Microelectronics Crolles 2 Sas Capteur d'image
FR3125918A1 (fr) * 2021-07-28 2023-02-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives Capteur d’images
FR3127329B1 (fr) 2021-09-17 2024-01-26 St Microelectronics Crolles 2 Sas Pixel d'image et de profondeur
WO2023249016A1 (fr) * 2022-06-24 2023-12-28 ソニーセミコンダクタソリューションズ株式会社 Élément d'imagerie et dispositif d'imagerie
WO2023249116A1 (fr) * 2022-06-24 2023-12-28 ソニーセミコンダクタソリューションズ株式会社 Élément d'imagerie et dispositif électronique

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7541627B2 (en) * 2004-03-08 2009-06-02 Foveon, Inc. Method and apparatus for improving sensitivity in vertical color CMOS image sensors
KR100720483B1 (ko) 2005-12-09 2007-05-22 동부일렉트로닉스 주식회사 수직 칼라 필터 검출기단 및 그 제조방법
US8531567B2 (en) 2009-10-22 2013-09-10 Stmicroelectronics (Crolles 2) Sas Image sensor with vertical transfer gate
JP2011159756A (ja) 2010-01-29 2011-08-18 Sony Corp 固体撮像装置とその製造方法、及び電子機器
US9281331B2 (en) * 2014-06-19 2016-03-08 Taiwan Semiconductor Manufacturing Co., Ltd. High dielectric constant structure for the vertical transfer gates of a complementary metal-oxide semiconductor (CMOS) image sensor
KR102456530B1 (ko) 2015-09-09 2022-10-20 삼성전자주식회사 이미지 센서
FR3049389A1 (fr) * 2016-03-22 2017-09-29 St Microelectronics Crolles 2 Sas Mur d'isolement et son procede de fabrication
FR3052297A1 (fr) 2016-06-06 2017-12-08 St Microelectronics Crolles 2 Sas Capteur d'image de type a obturation globale
KR102546550B1 (ko) * 2016-06-24 2023-06-23 에스케이하이닉스 주식회사 딥 트렌치들 내의 전달 게이트들을 갖는 이미지 센서
US10163963B2 (en) * 2017-04-05 2018-12-25 Semiconductor Components Industries, Llc Image sensors with vertically stacked photodiodes and vertical transfer gates
CN108231810B (zh) 2017-12-27 2020-06-30 上海集成电路研发中心有限公司 一种增加悬浮漏极电容的像素单元结构及制作方法
JP7117110B2 (ja) * 2018-01-31 2022-08-12 ソニーグループ株式会社 光電変換素子および撮像装置
FR3089086B1 (fr) 2018-11-22 2021-09-24 St Microelectronics Crolles 2 Sas Dispositif imageur intégré avec une capacité de stockage des charges améliorée
CN111696865B (zh) * 2019-03-13 2023-08-18 中芯国际集成电路制造(上海)有限公司 半导体器件及其形成方法
FR3098988B1 (fr) * 2019-07-19 2022-08-26 St Microelectronics Crolles 2 Sas Capteur d'image

Also Published As

Publication number Publication date
US11901381B2 (en) 2024-02-13
CN112242410A (zh) 2021-01-19
FR3098988A1 (fr) 2021-01-22
CN214336715U (zh) 2021-10-01
US20210020675A1 (en) 2021-01-21
US20240128289A1 (en) 2024-04-18

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