FR3096834B1 - Dispositif optoelectronique comportant une diode electroluminescente ayant une couche limitant les courants de fuite - Google Patents
Dispositif optoelectronique comportant une diode electroluminescente ayant une couche limitant les courants de fuite Download PDFInfo
- Publication number
- FR3096834B1 FR3096834B1 FR1905638A FR1905638A FR3096834B1 FR 3096834 B1 FR3096834 B1 FR 3096834B1 FR 1905638 A FR1905638 A FR 1905638A FR 1905638 A FR1905638 A FR 1905638A FR 3096834 B1 FR3096834 B1 FR 3096834B1
- Authority
- FR
- France
- Prior art keywords
- emitting diode
- optoelectronic device
- light emitting
- leakage current
- current limiting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005693 optoelectronics Effects 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
Abstract
Dispositif optoélectronique (10) comportant un substrat (101) délimitant une face support (101a), au moins une diode électroluminescente (11) comportant une première portion semiconductrice (112) dopée de forme globalement filaire suivant un axe longitudinal (11b) et ayant des surfaces latérales (112b) parallèles à l’axe longitudinal (11b), la portion active (111) étant agencée sur une extrémité sommitale (11a) de la première portion semiconductrice (112), une deuxième portion semiconductrice (113) dopée selon un deuxième type de dopage et agencée, au moins en partie, sur tout ou partie de la portion active (111), une couche résistive électriquement (114), dont la résistance électrique est supérieure à celle de la portion active (111), recouvrant au moins tout ou partie des surfaces latérales (112b) de la première portion semiconductrice (112) et tout ou partie de la surface de l’extrémité sommitale (11a) de la première portion semiconductrice (112) non recouverte par la portion active (111).
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1905638A FR3096834B1 (fr) | 2019-05-28 | 2019-05-28 | Dispositif optoelectronique comportant une diode electroluminescente ayant une couche limitant les courants de fuite |
PCT/FR2020/050902 WO2020240140A1 (fr) | 2019-05-28 | 2020-05-28 | Dispositif optoélectronique comportant deux diodes électroluminescentes filaires ayant chacune une couche limitant les courants de fuite |
EP20737521.3A EP3977512A1 (fr) | 2019-05-28 | 2020-05-28 | Dispositif optoélectronique comportant deux diodes électroluminescentes filaires ayant chacune une couche limitant les courants de fuite |
US17/613,699 US12002841B2 (en) | 2019-05-28 | 2020-05-28 | Optoelectronic device comprising two wire-shaped light-emitting diodes each having a layer that limits the leakage currents |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1905638 | 2019-05-28 | ||
FR1905638A FR3096834B1 (fr) | 2019-05-28 | 2019-05-28 | Dispositif optoelectronique comportant une diode electroluminescente ayant une couche limitant les courants de fuite |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3096834A1 FR3096834A1 (fr) | 2020-12-04 |
FR3096834B1 true FR3096834B1 (fr) | 2022-11-25 |
Family
ID=67957071
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1905638A Active FR3096834B1 (fr) | 2019-05-28 | 2019-05-28 | Dispositif optoelectronique comportant une diode electroluminescente ayant une couche limitant les courants de fuite |
Country Status (4)
Country | Link |
---|---|
US (1) | US12002841B2 (fr) |
EP (1) | EP3977512A1 (fr) |
FR (1) | FR3096834B1 (fr) |
WO (1) | WO2020240140A1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3096509B1 (fr) * | 2019-05-20 | 2021-05-28 | Aledia | Dispositif optoelectronique avec diodes electroluminescentes dont une zone dopee integre une portion externe a base d’aluminium et de nitrure de galium |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2674448A1 (fr) * | 2007-01-12 | 2008-07-17 | Qunano Ab | Nanofils de nitrure et leur procede de fabrication |
JP5097532B2 (ja) * | 2007-12-21 | 2012-12-12 | パナソニック株式会社 | 化合物半導体発光素子の製造方法 |
KR101622308B1 (ko) * | 2009-11-17 | 2016-05-18 | 삼성전자주식회사 | 발광소자 및 그 제조방법 |
KR20130136906A (ko) * | 2010-06-18 | 2013-12-13 | 글로 에이비 | 나노와이어 led 구조와 이를 제조하기 위한 방법 |
US9947829B2 (en) * | 2010-06-24 | 2018-04-17 | Glo Ab | Substrate with buffer layer for oriented nanowire growth |
FR2995729B1 (fr) * | 2012-09-18 | 2016-01-01 | Aledia | Dispositif opto-electrique a microfils ou nanofils semiconducteurs et son procede de fabrication |
FR2997558B1 (fr) * | 2012-10-26 | 2015-12-18 | Aledia | Dispositif opto-electrique et son procede de fabrication |
TW201515091A (zh) * | 2013-06-18 | 2015-04-16 | Glo Ab | 藉由乾式蝕刻移除3d半導體結構之方法 |
US9972750B2 (en) * | 2013-12-13 | 2018-05-15 | Glo Ab | Use of dielectric film to reduce resistivity of transparent conductive oxide in nanowire LEDs |
FR3053530B1 (fr) | 2016-06-30 | 2018-07-27 | Aledia | Dispositif optoelectronique a pixels a contraste et luminance ameliores |
US10388641B2 (en) | 2017-10-19 | 2019-08-20 | Tectus Corporation | Ultra-dense LED projector |
-
2019
- 2019-05-28 FR FR1905638A patent/FR3096834B1/fr active Active
-
2020
- 2020-05-28 WO PCT/FR2020/050902 patent/WO2020240140A1/fr unknown
- 2020-05-28 US US17/613,699 patent/US12002841B2/en active Active
- 2020-05-28 EP EP20737521.3A patent/EP3977512A1/fr active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2020240140A1 (fr) | 2020-12-03 |
EP3977512A1 (fr) | 2022-04-06 |
US20220231076A1 (en) | 2022-07-21 |
US12002841B2 (en) | 2024-06-04 |
FR3096834A1 (fr) | 2020-12-04 |
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