FR3083646B1 - Capteur d'images - Google Patents

Capteur d'images Download PDF

Info

Publication number
FR3083646B1
FR3083646B1 FR1856285A FR1856285A FR3083646B1 FR 3083646 B1 FR3083646 B1 FR 3083646B1 FR 1856285 A FR1856285 A FR 1856285A FR 1856285 A FR1856285 A FR 1856285A FR 3083646 B1 FR3083646 B1 FR 3083646B1
Authority
FR
France
Prior art keywords
pixel
semiconductor layer
wavelength
image sensor
lateral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1856285A
Other languages
English (en)
Other versions
FR3083646A1 (fr
Inventor
Denis Rideau
Axel Crocherie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR1856285A priority Critical patent/FR3083646B1/fr
Priority to US16/451,918 priority patent/US10903259B2/en
Priority to CN201910610889.8A priority patent/CN110707112A/zh
Priority to CN201921055553.1U priority patent/CN210272365U/zh
Publication of FR3083646A1 publication Critical patent/FR3083646A1/fr
Application granted granted Critical
Publication of FR3083646B1 publication Critical patent/FR3083646B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14607—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H01L27/14647—Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4446—Type of detector
    • G01J2001/4473—Phototransistor

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

La présente description concerne un capteur d'images multispectrales comportant une pluralité de pixels (P1, P2, P3, P4) formés dans et sur une couche semiconductrice (101), chaque pixel comportant une zone active photosensible formée dans une portion de la couche semiconductrice délimitée latéralement par des murs d'isolation périphériques (105), ladite pluralité de pixels comprenant au moins un pixel (P1) d'un premier type dans lequel la portion de couche semiconductrice du pixel a une première dimension latérale choisie de façon à définir une cavité latérale résonant à une première longueur d'onde, et au moins un pixel (P2) d'un deuxième type dans lequel la portion de couche semiconductrice du pixel a une deuxième dimension latérale différente de la première dimension, choisie de façon à définir une cavité latérale résonant à une deuxième longueur d'onde différente de la première longueur d'onde.
FR1856285A 2018-07-09 2018-07-09 Capteur d'images Active FR3083646B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1856285A FR3083646B1 (fr) 2018-07-09 2018-07-09 Capteur d'images
US16/451,918 US10903259B2 (en) 2018-07-09 2019-06-25 Image sensor
CN201910610889.8A CN110707112A (zh) 2018-07-09 2019-07-05 图像传感器
CN201921055553.1U CN210272365U (zh) 2018-07-09 2019-07-05 多光谱图像传感器和多光谱传感器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1856285 2018-07-09
FR1856285A FR3083646B1 (fr) 2018-07-09 2018-07-09 Capteur d'images

Publications (2)

Publication Number Publication Date
FR3083646A1 FR3083646A1 (fr) 2020-01-10
FR3083646B1 true FR3083646B1 (fr) 2021-09-17

Family

ID=65031391

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1856285A Active FR3083646B1 (fr) 2018-07-09 2018-07-09 Capteur d'images

Country Status (3)

Country Link
US (1) US10903259B2 (fr)
CN (2) CN210272365U (fr)
FR (1) FR3083646B1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3083646B1 (fr) * 2018-07-09 2021-09-17 St Microelectronics Crolles 2 Sas Capteur d'images
FR3083644B1 (fr) * 2018-07-09 2021-05-14 St Microelectronics Crolles 2 Sas Capteur d'images
US11698296B2 (en) * 2019-09-25 2023-07-11 Stmicroelectronics (Crolles 2) Sas Light sensor using pixel optical diffraction gratings having different pitches
CN114868379A (zh) * 2019-11-08 2022-08-05 ams国际有限公司 光传感器
CN113596308A (zh) * 2021-07-30 2021-11-02 苏州多感科技有限公司 图像传感器以及优化成像效果的方法
FR3130450A1 (fr) * 2021-12-14 2023-06-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives Capteur d'images visibles et infrarouges et procédé de fabrication d'un tel capteur
FR3140991A1 (fr) * 2022-10-12 2024-04-19 Commissariat A L'energie Atomique Et Aux Energies Alternatives Filtre optique pour capteur multispectral
FR3142545A1 (fr) * 2022-11-28 2024-05-31 Commissariat A L'energie Atomique Et Aux Energies Alternatives Filtre optique pour capteur multispectral et procédé de fabrication d’un tel filtre
FR3142833A1 (fr) * 2022-12-01 2024-06-07 Commissariat à l'Energie Atomique et aux Energies Alternatives Capteur d’images visibles et infrarouges

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6984816B2 (en) * 2003-08-13 2006-01-10 Motorola, Inc. Vertically integrated photosensor for CMOS imagers
WO2008073639A2 (fr) * 2006-11-07 2008-06-19 Cdm Optics, Inc. Structures résonantes pour système de détection d'énergie électromagnétique et procédés associés
JP5300344B2 (ja) * 2007-07-06 2013-09-25 キヤノン株式会社 光検出素子及び撮像素子、光検出方法及び撮像方法
US9520510B2 (en) * 2013-12-03 2016-12-13 Samsung Display Co., Ltd. Embedded optical sensors using transverse Fabry-Perot resonator as detectors
US10134926B2 (en) * 2015-02-03 2018-11-20 Microsoft Technology Licensing, Llc Quantum-efficiency-enhanced time-of-flight detector
KR102497812B1 (ko) * 2015-08-10 2023-02-09 삼성전자주식회사 이미지 센서
FR3044466A1 (fr) * 2015-12-01 2017-06-02 Commissariat Energie Atomique Capteur d'images muni d'un dispositif de tri spectral
CN112788224B (zh) * 2016-01-29 2023-04-04 松下知识产权经营株式会社 摄像装置
US10553733B2 (en) * 2016-11-29 2020-02-04 Taiwan Semiconductor Manufacturing Co., Ltd. QE approach by double-side, multi absorption structure
US12009379B2 (en) * 2017-05-01 2024-06-11 Visera Technologies Company Limited Image sensor
US11075242B2 (en) * 2017-11-27 2021-07-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices for image sensing
FR3083646B1 (fr) * 2018-07-09 2021-09-17 St Microelectronics Crolles 2 Sas Capteur d'images

Also Published As

Publication number Publication date
FR3083646A1 (fr) 2020-01-10
CN110707112A (zh) 2020-01-17
US10903259B2 (en) 2021-01-26
US20200013820A1 (en) 2020-01-09
CN210272365U (zh) 2020-04-07

Similar Documents

Publication Publication Date Title
FR3083646B1 (fr) Capteur d'images
FR3075462B1 (fr) Dispositif d'acquisition d'une image 2d et d'une image de profondeur d'une scene
JP5241454B2 (ja) 固体撮像装置及びそれを用いた撮像システム
SG10201808136VA (en) Image sensors
FR3083644B1 (fr) Capteur d'images
JP2006310650A5 (fr)
JP2007323389A (ja) 固体撮像装置、撮像方法および撮像システム
JP2005228956A (ja) 固体撮像装置および撮像システム
US9883150B2 (en) Solid state imaging device, imaging device, and electronic device for control of color and luminance resolutions
US11177313B2 (en) Imaging system and imaging method
JP6566734B2 (ja) 固体撮像素子
US8319168B2 (en) Semiconductor image sensor array device, apparatus comprising such a device and method for operating such device
US10002893B2 (en) Image sensor including hybrid pixel structure
JP2013243324A5 (fr)
EP2752878A3 (fr) Capteur d'image
JP2017157803A (ja) 撮像装置
FR3108783B1 (fr) Dispositif d'acquisition d'une image 2D et d'une image de profondeur d'une scène
US20220155145A1 (en) Sensor device and methods of use
JP6692749B2 (ja) マルチスペクトルカメラ
FR3098991B1 (fr) Pixel de capteur d’images
JP2001119705A (ja) カラー撮像装置
JP6355401B2 (ja) 固体撮像装置及びカメラ
KR20200056490A (ko) 촬상 소자 및 촬상 장치
JP2024515399A (ja) 光学センサデバイスのための光学フィルタ
US7646042B2 (en) Charge coupled device and solid-state imaging apparatus

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20200110

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 5

PLFP Fee payment

Year of fee payment: 6