FR3081613B1 - Transistor a haute mobilite electronique en mode enrichissement - Google Patents
Transistor a haute mobilite electronique en mode enrichissement Download PDFInfo
- Publication number
- FR3081613B1 FR3081613B1 FR1854221A FR1854221A FR3081613B1 FR 3081613 B1 FR3081613 B1 FR 3081613B1 FR 1854221 A FR1854221 A FR 1854221A FR 1854221 A FR1854221 A FR 1854221A FR 3081613 B1 FR3081613 B1 FR 3081613B1
- Authority
- FR
- France
- Prior art keywords
- transistor
- high electronic
- electronic mobility
- enrichment mode
- enrichment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Thin Film Transistor (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1854221A FR3081613B1 (fr) | 2018-05-22 | 2018-05-22 | Transistor a haute mobilite electronique en mode enrichissement |
PCT/FR2019/051041 WO2019224448A1 (fr) | 2018-05-22 | 2019-05-07 | Transistor a haute mobilite electronique en mode enrichissement |
US17/058,117 US20210202728A1 (en) | 2018-05-22 | 2019-05-07 | Enhancement-mode high-electron-mobility transistor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1854221 | 2018-05-22 | ||
FR1854221A FR3081613B1 (fr) | 2018-05-22 | 2018-05-22 | Transistor a haute mobilite electronique en mode enrichissement |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3081613A1 FR3081613A1 (fr) | 2019-11-29 |
FR3081613B1 true FR3081613B1 (fr) | 2022-12-09 |
Family
ID=63407354
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1854221A Active FR3081613B1 (fr) | 2018-05-22 | 2018-05-22 | Transistor a haute mobilite electronique en mode enrichissement |
Country Status (3)
Country | Link |
---|---|
US (1) | US20210202728A1 (fr) |
FR (1) | FR3081613B1 (fr) |
WO (1) | WO2019224448A1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3719850A1 (fr) * | 2019-04-03 | 2020-10-07 | Infineon Technologies Austria AG | Transistor à base de nitrures d'éléments iii et méthode de fabrication d'une structure de grille pour un transistor à base de nitrures d'éléments iii |
US11171203B2 (en) * | 2019-05-22 | 2021-11-09 | Virginia Tech Intellectual Properties, Inc. | High electron mobility transistors with charge compensation |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2746482B2 (ja) * | 1991-02-14 | 1998-05-06 | 三菱電機株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP4705412B2 (ja) * | 2005-06-06 | 2011-06-22 | パナソニック株式会社 | 電界効果トランジスタ及びその製造方法 |
JP2009231396A (ja) * | 2008-03-19 | 2009-10-08 | Sumitomo Chemical Co Ltd | 半導体装置および半導体装置の製造方法 |
US8519438B2 (en) * | 2008-04-23 | 2013-08-27 | Transphorm Inc. | Enhancement mode III-N HEMTs |
JP2010103425A (ja) * | 2008-10-27 | 2010-05-06 | Sanken Electric Co Ltd | 窒化物半導体装置 |
KR101946454B1 (ko) * | 2012-09-18 | 2019-02-12 | 삼성전자주식회사 | 고 전자 이동도 트랜지스터 및 그 제조 방법 |
JP6161246B2 (ja) * | 2012-09-28 | 2017-07-12 | トランスフォーム・ジャパン株式会社 | 半導体装置及び半導体装置の製造方法 |
US9443969B2 (en) * | 2013-07-23 | 2016-09-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transistor having metal diffusion barrier |
FR3047609A1 (fr) * | 2016-02-04 | 2017-08-11 | Commissariat Energie Atomique | Transistor hemt de type normalement ouvert presentant une tension de seuil eleve et une resistance de conduction reduite |
US10381456B2 (en) * | 2017-05-04 | 2019-08-13 | Texas Instruments Incorporated | Group IIIA-N HEMT with a tunnel diode in the gate stack |
WO2018230136A1 (fr) * | 2017-06-13 | 2018-12-20 | パナソニックIpマネジメント株式会社 | Dispositif à semi-conducteur au nitrure et son procédé de production |
-
2018
- 2018-05-22 FR FR1854221A patent/FR3081613B1/fr active Active
-
2019
- 2019-05-07 US US17/058,117 patent/US20210202728A1/en active Pending
- 2019-05-07 WO PCT/FR2019/051041 patent/WO2019224448A1/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US20210202728A1 (en) | 2021-07-01 |
FR3081613A1 (fr) | 2019-11-29 |
WO2019224448A1 (fr) | 2019-11-28 |
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