FR3081613A1 - Transistor a haute mobilite electronique en mode enrichissement - Google Patents
Transistor a haute mobilite electronique en mode enrichissement Download PDFInfo
- Publication number
- FR3081613A1 FR3081613A1 FR1854221A FR1854221A FR3081613A1 FR 3081613 A1 FR3081613 A1 FR 3081613A1 FR 1854221 A FR1854221 A FR 1854221A FR 1854221 A FR1854221 A FR 1854221A FR 3081613 A1 FR3081613 A1 FR 3081613A1
- Authority
- FR
- France
- Prior art keywords
- interface
- transistor
- bar
- layer
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims abstract description 77
- 239000004065 semiconductor Substances 0.000 claims abstract description 61
- 229910002601 GaN Inorganic materials 0.000 claims description 25
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 23
- 229910052698 phosphorus Inorganic materials 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 229910002704 AlGaN Inorganic materials 0.000 claims description 8
- 229910052732 germanium Inorganic materials 0.000 claims description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims 1
- 230000005533 two-dimensional electron gas Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 104
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000000969 carrier Substances 0.000 description 8
- 238000013459 approach Methods 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (9)
- REVENDICATIONS1. Transistor (100) à haute mobilité électronique en mode enrichissement comprenant :• Une structure (10) comportant un empilement (1) en matériaux semi-conducteurs de type III-V définissant une interface (2) et apte à former une couche de conduction (3) sous forme d'une couche de gaz d'électrons à deux dimensions, sensiblement sous ladite interface (2), • Une électrode de source (20) et une électrode de drain (30), chacune en contact électrique avec la couche de conduction ( 3), • Une électrode de grille (40) disposée sur la structure (10), entre l'électrode de source (20) et l'électrode de drain (30),Le transistor (100) étant caractérisé en ce que :• la structure (10) comprend un barreau (4) disposé sous l'électrode de grille (40) et traversant l'interface (2) de l'empilement (1), • le barreau (4) comprend deux portions semi-conductrices (4a,4b) de type de dopage opposé, respectivement en matériaux dopés P et N, définissant une jonction PN (4c) à proximité de l'interface (2).
- 2. Transistor (100) à haute mobilité électronique en mode enrichissement selon la revendication précédente, dans lequel le barreau (4) comprend une première portion semi-conductrice (4a) essentiellement située en-dessous de l'interface (2), et une deuxième portion semi-conductrice (4b), essentiellement située au-dessus de l'interface (2), celle des deux portions semi-conductrices (4a,4b) en matériau dopé N étant située de part et d'autre de l'interface (2).
- 3. Transistor (100) à haute mobilité électronique en mode enrichissement selon la revendication précédente, dans lequel au moins une portion semi-conductrice (4a,4b) comporte deux couches de matériaux de même type de dopage mais de niveaux de dopage différents, la couche la moins dopée de la au moins une portion semi-conductrice (4a,4b) formant la jonction PN (4c) avec l'autre portion semi-conductrice (4a,4b).
- 4. Transistor (100) à haute mobilité électronique en mode enrichissement selon l'une des revendications précédentes, dans lequel tout ou partie du barreau (4) est isolé électriquement d'une couche canal (1b) de l'empilement (1).
- 5. Transistor (100) à haute enrichissement selon l'une dans lequel les matériaux présentent des niveaux de lE21/cm3.mobilité électronique en mode des revendications précédentes, dopés P ou N du barreau (4) dopage compris entre lE15/cm3 et
- 6. Transistor (100) à haute mobilité électronique en mode enrichissement selon la revendication précédente, dans lequel le matériau de type P du barreau (4) est du nitrure de gallium dopé magnésium ou carbone.
- 7. Transistor (100) à haute mobilité électronique en mode enrichissement selon la revendication 6, dans lequel le matériau de type N du barreau (4) est du nitrure de gallium dopé silicium ou germanium.
- 8. Transistor (100) à haute mobilité électronique en mode enrichissement selon l'une des revendications précédentes, dans lequel le barreau (4) présente une largeur (1) comprise entre 0,25 et 5 microns et une longueur (L) , la largeur (1) et la longueur (L) étant parallèles au plan de l'interface (2), la largeur (1) s'étendant selon un axe transversal (y) reliant l'électrode de source (20) à l'électrode de drain (30) et la longueur (L) s'étendant selon un axe longitudinal (x) orthogonal à l'axe transversal (y).
- 9. Transistor (100) à haute mobilité électronique en mode enrichissement selon l'une des revendications précédentes, dans lequel l'empilement (1) est formé en matériaux semiconducteurs de type III-N, en particulier en AlGaN et GaN.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1854221A FR3081613B1 (fr) | 2018-05-22 | 2018-05-22 | Transistor a haute mobilite electronique en mode enrichissement |
PCT/FR2019/051041 WO2019224448A1 (fr) | 2018-05-22 | 2019-05-07 | Transistor a haute mobilite electronique en mode enrichissement |
US17/058,117 US20210202728A1 (en) | 2018-05-22 | 2019-05-07 | Enhancement-mode high-electron-mobility transistor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1854221 | 2018-05-22 | ||
FR1854221A FR3081613B1 (fr) | 2018-05-22 | 2018-05-22 | Transistor a haute mobilite electronique en mode enrichissement |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3081613A1 true FR3081613A1 (fr) | 2019-11-29 |
FR3081613B1 FR3081613B1 (fr) | 2022-12-09 |
Family
ID=63407354
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1854221A Active FR3081613B1 (fr) | 2018-05-22 | 2018-05-22 | Transistor a haute mobilite electronique en mode enrichissement |
Country Status (3)
Country | Link |
---|---|
US (1) | US20210202728A1 (fr) |
FR (1) | FR3081613B1 (fr) |
WO (1) | WO2019224448A1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3719850A1 (fr) * | 2019-04-03 | 2020-10-07 | Infineon Technologies Austria AG | Transistor à base de nitrures d'éléments iii et méthode de fabrication d'une structure de grille pour un transistor à base de nitrures d'éléments iii |
US11171203B2 (en) * | 2019-05-22 | 2021-11-09 | Virginia Tech Intellectual Properties, Inc. | High electron mobility transistors with charge compensation |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060273347A1 (en) * | 2005-06-06 | 2006-12-07 | Masahiro Hikita | Field-effect transistor and method for fabricating the same |
US20140077267A1 (en) * | 2012-09-18 | 2014-03-20 | Samsung Electronics Co., Ltd. | High electron mobility transistor and method of manufacturing the same |
US20140091316A1 (en) * | 2012-09-28 | 2014-04-03 | Fujitsu Limited | Semiconductor device and manufacturing method of semiconductor device |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2746482B2 (ja) * | 1991-02-14 | 1998-05-06 | 三菱電機株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP2009231396A (ja) * | 2008-03-19 | 2009-10-08 | Sumitomo Chemical Co Ltd | 半導体装置および半導体装置の製造方法 |
US8519438B2 (en) * | 2008-04-23 | 2013-08-27 | Transphorm Inc. | Enhancement mode III-N HEMTs |
JP2010103425A (ja) * | 2008-10-27 | 2010-05-06 | Sanken Electric Co Ltd | 窒化物半導体装置 |
US9443969B2 (en) * | 2013-07-23 | 2016-09-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transistor having metal diffusion barrier |
FR3047609A1 (fr) * | 2016-02-04 | 2017-08-11 | Commissariat Energie Atomique | Transistor hemt de type normalement ouvert presentant une tension de seuil eleve et une resistance de conduction reduite |
US10381456B2 (en) * | 2017-05-04 | 2019-08-13 | Texas Instruments Incorporated | Group IIIA-N HEMT with a tunnel diode in the gate stack |
WO2018230136A1 (fr) * | 2017-06-13 | 2018-12-20 | パナソニックIpマネジメント株式会社 | Dispositif à semi-conducteur au nitrure et son procédé de production |
-
2018
- 2018-05-22 FR FR1854221A patent/FR3081613B1/fr active Active
-
2019
- 2019-05-07 US US17/058,117 patent/US20210202728A1/en active Pending
- 2019-05-07 WO PCT/FR2019/051041 patent/WO2019224448A1/fr active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060273347A1 (en) * | 2005-06-06 | 2006-12-07 | Masahiro Hikita | Field-effect transistor and method for fabricating the same |
US20140077267A1 (en) * | 2012-09-18 | 2014-03-20 | Samsung Electronics Co., Ltd. | High electron mobility transistor and method of manufacturing the same |
US20140091316A1 (en) * | 2012-09-28 | 2014-04-03 | Fujitsu Limited | Semiconductor device and manufacturing method of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
FR3081613B1 (fr) | 2022-12-09 |
WO2019224448A1 (fr) | 2019-11-28 |
US20210202728A1 (en) | 2021-07-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP3203526B1 (fr) | Transistor à hétérojonction à confinement de gaz d'électrons amélioré | |
EP2736079B1 (fr) | Procédé de fabrication d'un transistor à hétérojonction de type normalement bloqué | |
EP3240041A1 (fr) | Transistor à heterojonction de type normalement ouvert a tension de seuil elevee | |
EP2736078B1 (fr) | Transistor bidirectionnel à haute mobilité électronique | |
EP3203527A1 (fr) | Transistor a heterojonction a haute mobilite electronique de type normalement bloque | |
WO2018100262A1 (fr) | Transistor à hétérojonction à structure verticale | |
EP3378098B1 (fr) | Diode a heterojonction ayant un courant de surcharge transitoire accru | |
EP2685504A1 (fr) | Transistor à effet tunnel | |
EP3913687A1 (fr) | Composant électronique à hétérojonction comprenant une plaque de champ et une région flottante dopée p | |
WO2017072249A1 (fr) | Transistor a effet de champ a rendement et gain optimise | |
WO2019224448A1 (fr) | Transistor a haute mobilite electronique en mode enrichissement | |
FR3041150A1 (fr) | Transistor a enrichissement comportant une heterojonction algan/gan et une grille en diamant dope p | |
CN114402442A (zh) | 氮化物基半导体装置及其制造方法 | |
FR3078198A1 (fr) | Transistor a haute mobilite electronique en mode enrichissement | |
EP3826072A1 (fr) | Transistor a gaz d'electrons, dispositif monobloc comportant au moins deux transistors en cascode et procedes de fabrication associes | |
EP0503731B1 (fr) | Procédé de réalisation d'un transistor à haute mobilité électronique intégré | |
EP4120359A1 (fr) | Transistor à haute mobilité électronique à resistance d'accès réduite et procédé de fabrication d'un transistor à haute mobilité électronique avec résistance d'accès réduite | |
EP4099397A1 (fr) | Dispositif électronique à transistors | |
FR3047609A1 (fr) | Transistor hemt de type normalement ouvert presentant une tension de seuil eleve et une resistance de conduction reduite | |
EP3561880A1 (fr) | Transistor hemt et procedes de fabrication favorisant une longueur et des fuites de grille reduites | |
WO2020035644A1 (fr) | Transistor a haute mobilite electronique | |
EP4044251A1 (fr) | Transistor | |
FR3136111A1 (fr) | Composant électronique à base de nitrure de galium dope p | |
FR3083647A1 (fr) | Transistor a heterojonction de type normalement ouvert a resistance de passage reduite | |
EP4318597A1 (fr) | Transistor à effet de champ ayant un comportement de type p-fet |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 2 |
|
PLSC | Publication of the preliminary search report |
Effective date: 20191129 |
|
PLFP | Fee payment |
Year of fee payment: 3 |
|
PLFP | Fee payment |
Year of fee payment: 4 |
|
PLFP | Fee payment |
Year of fee payment: 5 |
|
PLFP | Fee payment |
Year of fee payment: 6 |
|
TP | Transmission of property |
Owner name: STMICROELECTRONICS FRANCE, FR Effective date: 20230830 |
|
CD | Change of name or company name |
Owner name: STMICROELECTRONICS FRANCE, FR Effective date: 20230905 |
|
CJ | Change in legal form |
Effective date: 20230905 |
|
PLFP | Fee payment |
Year of fee payment: 7 |