FR3060840B1 - Procede de realisation d'un dispositif semi-conducteur a espaceurs internes auto-alignes - Google Patents
Procede de realisation d'un dispositif semi-conducteur a espaceurs internes auto-alignes Download PDFInfo
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- FR3060840B1 FR3060840B1 FR1662531A FR1662531A FR3060840B1 FR 3060840 B1 FR3060840 B1 FR 3060840B1 FR 1662531 A FR1662531 A FR 1662531A FR 1662531 A FR1662531 A FR 1662531A FR 3060840 B1 FR3060840 B1 FR 3060840B1
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- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 2
- 125000006850 spacer group Chemical group 0.000 abstract 4
- 238000005530 etching Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
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- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66553—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using inside spacers, permanent or not
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
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- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6653—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using the removal of at least part of spacer, e.g. disposable spacer
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Procédé de réalisation d'un dispositif semi-conducteur (100), comportant les étapes suivantes : a) réalisation, sur un substrat (104), d'un empilement comprenant une première portion de semi-conducteur apte à former une zone active et disposée entre deux deuxièmes portions d'un matériau apte à être gravé sélectivement vis-à-vis du semi-conducteur de la première portion, b) réalisation, sur une partie de l'empilement, d'espaceurs externes (112) et d'une grille factice, c) gravure des deuxièmes portions telle que des parties restantes soient disposées sous la grille factice, d) oxydation partielle des parties restantes depuis des faces externes, formant des espaceurs internes (118), e) suppression de la grille factice et de parties non oxydées des parties restantes disposées sous la grille factice, f) réalisation d'une grille (128) entre les espaceurs externes et entre les espaceurs internes et recouvrant le canal.
Priority Applications (2)
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FR1662531A FR3060840B1 (fr) | 2016-12-15 | 2016-12-15 | Procede de realisation d'un dispositif semi-conducteur a espaceurs internes auto-alignes |
US15/837,405 US10217842B2 (en) | 2016-12-15 | 2017-12-11 | Method for making a semiconductor device with self-aligned inner spacers |
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FR1662531A FR3060840B1 (fr) | 2016-12-15 | 2016-12-15 | Procede de realisation d'un dispositif semi-conducteur a espaceurs internes auto-alignes |
FR1662531 | 2016-12-15 |
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FR3060840A1 FR3060840A1 (fr) | 2018-06-22 |
FR3060840B1 true FR3060840B1 (fr) | 2019-05-31 |
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Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9559181B2 (en) * | 2013-11-26 | 2017-01-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for FinFET device with buried sige oxide |
US10297663B2 (en) | 2017-04-19 | 2019-05-21 | International Business Machines Corporation | Gate fill utilizing replacement spacer |
US10756174B2 (en) * | 2017-04-26 | 2020-08-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multiple-stacked semiconductor nanowires and source/drain spacers |
US10170484B1 (en) * | 2017-10-18 | 2019-01-01 | Globalfoundries Inc. | Integrated circuit structure incorporating multiple gate-all-around field effect transistors having different drive currents and method |
US10559675B2 (en) * | 2017-12-21 | 2020-02-11 | International Business Machines Corporation | Stacked silicon nanotubes |
US10325820B1 (en) * | 2018-01-10 | 2019-06-18 | International Business Machines Corporation | Source and drain isolation for CMOS nanosheet with one block mask |
US10418449B2 (en) * | 2018-01-10 | 2019-09-17 | Globalfoundries Inc. | Circuits based on complementary field-effect transistors |
US10431663B2 (en) * | 2018-01-10 | 2019-10-01 | Globalfoundries Inc. | Method of forming integrated circuit with gate-all-around field effect transistor and the resulting structure |
US20190267463A1 (en) * | 2018-02-28 | 2019-08-29 | International Business Machines Corporation | Low-k dielectric inner spacer for gate all around transistors |
US11081567B2 (en) * | 2018-03-12 | 2021-08-03 | International Business Machines Corporation | Replacement-channel fabrication of III-V nanosheet devices |
US11335807B2 (en) | 2018-06-29 | 2022-05-17 | Intel Corporation | Isolation schemes for gate-all-around transistor devices |
US10748935B2 (en) | 2018-06-29 | 2020-08-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stacked vertically isolated MOSFET structure and method of forming the same |
US11355608B2 (en) * | 2018-09-24 | 2022-06-07 | Intel Corporation | Self-aligned gate endcap (SAGE) architectures with gate-all-around devices having epitaxial source or drain structures |
US11538806B2 (en) * | 2018-09-27 | 2022-12-27 | Intel Corporation | Gate-all-around integrated circuit structures having high mobility |
US11469299B2 (en) * | 2018-09-28 | 2022-10-11 | Intel Corporation | Gate-all-around integrated circuit structures having underlying dopant-diffusion blocking layers |
US11239359B2 (en) * | 2018-09-29 | 2022-02-01 | International Business Machines Corporation | Fabricating a gate-all-around (GAA) field effect transistor having threshold voltage asymmetry by thinning source side lateral end portion of the nanosheet layer |
FR3091620B1 (fr) | 2019-01-07 | 2021-01-29 | Commissariat Energie Atomique | Procédé de transfert de couche avec réduction localisée d’une capacité à initier une fracture |
US11031502B2 (en) | 2019-01-08 | 2021-06-08 | Samsung Electronics Co., Ltd. | Semiconductor devices |
US11239363B2 (en) | 2019-01-08 | 2022-02-01 | Samsung Electronics Co., Ltd. | Semiconductor devices |
US11037832B2 (en) | 2019-05-29 | 2021-06-15 | International Business Machines Corporation | Threshold voltage adjustment by inner spacer material selection |
KR20200137405A (ko) * | 2019-05-30 | 2020-12-09 | 삼성전자주식회사 | 반도체 장치 |
FR3100083B1 (fr) | 2019-08-20 | 2021-09-10 | Commissariat Energie Atomique | Procédé de guérison d’une couche implantée comprenant un traitement thermique préalable à une recristallisation par recuit laser |
US11251080B2 (en) * | 2019-12-02 | 2022-02-15 | Tokyo Electron Limited | Method of making 3D circuits with integrated stacked 3D metal lines for high density circuits |
US11469137B2 (en) | 2019-12-17 | 2022-10-11 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Manufacturing process of an RF-SOI trapping layer substrate resulting from a crystalline transformation of a buried layer |
DE102020120432A1 (de) * | 2019-12-31 | 2021-07-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Halbleitervorrichtungsstruktur mit Nanostruktur und deren Herstellungsverfahren |
US11393925B2 (en) * | 2019-12-31 | 2022-07-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device structure with nanostructure |
CN111180520B (zh) * | 2020-01-06 | 2024-02-20 | 中国科学院微电子研究所 | 半导体器件及其制备方法、集成电路及电子设备 |
US11508625B2 (en) | 2020-01-14 | 2022-11-22 | Tokyo Electron Limited | Method of making a continuous channel between 3D CMOS |
KR20210124731A (ko) * | 2020-04-07 | 2021-10-15 | 삼성전자주식회사 | 게이트 스페이서를 갖는 반도체 소자들 |
CN111710718B (zh) * | 2020-05-12 | 2023-07-14 | 中国科学院微电子研究所 | 一种环栅半导体器件及制作方法、电子设备 |
CN111710717B (zh) * | 2020-05-12 | 2024-02-13 | 中国科学院微电子研究所 | 一种半导体器件及其制作方法、电子设备 |
US11322505B2 (en) * | 2020-06-30 | 2022-05-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Ferroelectric random access memory devices and methods |
US11488959B2 (en) * | 2020-12-29 | 2022-11-01 | Nanya Technology Corporation | Gate-all-around semiconductor device with dielectric-all-around capacitor and method for fabricating the same |
KR20220134099A (ko) * | 2021-03-26 | 2022-10-05 | 삼성전자주식회사 | 활성 패턴을 포함하는 반도체 장치 및 이의 제조 방법 |
US20230018480A1 (en) * | 2021-07-16 | 2023-01-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device structure and method for forming the same |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100363332B1 (en) * | 2001-05-23 | 2002-12-05 | Samsung Electronics Co Ltd | Method for forming semiconductor device having gate all-around type transistor |
US7202117B2 (en) * | 2005-01-31 | 2007-04-10 | Freescale Semiconductor, Inc. | Method of making a planar double-gated transistor |
KR100707208B1 (ko) * | 2005-12-24 | 2007-04-13 | 삼성전자주식회사 | Gaa 구조의 핀-펫 및 그 제조 방법 |
CN101710585B (zh) * | 2009-12-01 | 2011-04-27 | 中国科学院上海微***与信息技术研究所 | 混合晶向积累型全包围栅cmos场效应晶体管 |
US9484447B2 (en) | 2012-06-29 | 2016-11-01 | Intel Corporation | Integration methods to fabricate internal spacers for nanowire devices |
US9006829B2 (en) | 2012-08-24 | 2015-04-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Aligned gate-all-around structure |
US8969149B2 (en) * | 2013-05-14 | 2015-03-03 | International Business Machines Corporation | Stacked semiconductor nanowires with tunnel spacers |
US9362397B2 (en) * | 2013-09-24 | 2016-06-07 | Samsung Electronics Co., Ltd. | Semiconductor devices |
US9219154B1 (en) * | 2014-07-15 | 2015-12-22 | International Business Machines Corporation | Method of fabricating electrostatically enhanced fins and stacked nanowire field effect transistors |
US9853166B2 (en) * | 2014-07-25 | 2017-12-26 | International Business Machines Corporation | Perfectly symmetric gate-all-around FET on suspended nanowire |
-
2016
- 2016-12-15 FR FR1662531A patent/FR3060840B1/fr active Active
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2017
- 2017-12-11 US US15/837,405 patent/US10217842B2/en active Active
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US20180175167A1 (en) | 2018-06-21 |
FR3060840A1 (fr) | 2018-06-22 |
US10217842B2 (en) | 2019-02-26 |
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