FR3021455B1 - Procede d'aplanissement d'evidements remplis de cuivre - Google Patents
Procede d'aplanissement d'evidements remplis de cuivreInfo
- Publication number
- FR3021455B1 FR3021455B1 FR1454578A FR1454578A FR3021455B1 FR 3021455 B1 FR3021455 B1 FR 3021455B1 FR 1454578 A FR1454578 A FR 1454578A FR 1454578 A FR1454578 A FR 1454578A FR 3021455 B1 FR3021455 B1 FR 3021455B1
- Authority
- FR
- France
- Prior art keywords
- evidents
- filled
- flowing copper
- copper
- flowing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
- H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
- H01L2224/081—Disposition
- H01L2224/0812—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/08135—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/08145—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
- H01L2224/08146—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked the bonding area connecting to a via connection in the body
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/8034—Bonding interfaces of the bonding area
- H01L2224/80357—Bonding interfaces of the bonding area being flush with the surface
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/808—Bonding techniques
- H01L2224/80894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
- H01L2224/80895—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
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- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
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- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
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- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
- H01L2225/06544—Design considerations for via connections, e.g. geometry or layout
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L24/03—Manufacturing methods
Priority Applications (3)
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FR1454578A FR3021455B1 (fr) | 2014-05-21 | 2014-05-21 | Procede d'aplanissement d'evidements remplis de cuivre |
US14/706,579 US9620385B2 (en) | 2014-05-21 | 2015-05-07 | Method of planarizing recesses filled with copper |
US15/447,410 US9865545B2 (en) | 2014-05-21 | 2017-03-02 | Plurality of substrates bonded by direct bonding of copper recesses |
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FR1454578A FR3021455B1 (fr) | 2014-05-21 | 2014-05-21 | Procede d'aplanissement d'evidements remplis de cuivre |
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FR3021455B1 true FR3021455B1 (fr) | 2017-10-13 |
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FR3021455B1 (fr) * | 2014-05-21 | 2017-10-13 | St Microelectronics Crolles 2 Sas | Procede d'aplanissement d'evidements remplis de cuivre |
CN109216267A (zh) * | 2014-12-23 | 2019-01-15 | 英特尔公司 | 解耦过孔填充 |
US10886250B2 (en) | 2015-07-10 | 2021-01-05 | Invensas Corporation | Structures and methods for low temperature bonding using nanoparticles |
TWI822659B (zh) | 2016-10-27 | 2023-11-21 | 美商艾德亞半導體科技有限責任公司 | 用於低溫接合的結構和方法 |
US10515913B2 (en) | 2017-03-17 | 2019-12-24 | Invensas Bonding Technologies, Inc. | Multi-metal contact structure |
US10446441B2 (en) | 2017-06-05 | 2019-10-15 | Invensas Corporation | Flat metal features for microelectronics applications |
US10840205B2 (en) * | 2017-09-24 | 2020-11-17 | Invensas Bonding Technologies, Inc. | Chemical mechanical polishing for hybrid bonding |
JP2019140178A (ja) * | 2018-02-07 | 2019-08-22 | 東芝メモリ株式会社 | 半導体装置 |
US11901186B2 (en) * | 2018-02-22 | 2024-02-13 | Massachusetts Institute Of Technology | Method of reducing semiconductor substrate surface unevenness |
US11056348B2 (en) | 2018-04-05 | 2021-07-06 | Invensas Bonding Technologies, Inc. | Bonding surfaces for microelectronics |
US10790262B2 (en) | 2018-04-11 | 2020-09-29 | Invensas Bonding Technologies, Inc. | Low temperature bonded structures |
CN109155301A (zh) * | 2018-08-13 | 2019-01-04 | 长江存储科技有限责任公司 | 具有帽盖层的键合触点及其形成方法 |
KR20210024893A (ko) | 2019-08-26 | 2021-03-08 | 삼성전자주식회사 | 반도체 소자 제조 방법 |
US11735523B2 (en) | 2020-05-19 | 2023-08-22 | Adeia Semiconductor Bonding Technologies Inc. | Laterally unconfined structure |
US11264357B1 (en) | 2020-10-20 | 2022-03-01 | Invensas Corporation | Mixed exposure for large die |
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US6927113B1 (en) * | 2003-05-23 | 2005-08-09 | Advanced Micro Devices | Semiconductor component and method of manufacture |
US6812141B1 (en) * | 2003-07-01 | 2004-11-02 | Infineon Technologies Ag | Recessed metal lines for protective enclosure in integrated circuits |
US6979625B1 (en) * | 2003-11-12 | 2005-12-27 | Advanced Micro Devices, Inc. | Copper interconnects with metal capping layer and selective copper alloys |
JP2007035734A (ja) * | 2005-07-25 | 2007-02-08 | Nec Electronics Corp | 半導体装置およびその製造方法 |
US8119500B2 (en) * | 2007-04-25 | 2012-02-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer bonding |
FR2963158B1 (fr) * | 2010-07-21 | 2013-05-17 | Commissariat Energie Atomique | Procede d'assemblage par collage direct entre deux elements comprenant des portions de cuivre et de materiaux dielectriques |
CN102915962B (zh) * | 2012-11-12 | 2016-04-20 | 上海华力微电子有限公司 | 铜金属覆盖层的制备方法 |
US9425155B2 (en) * | 2014-02-25 | 2016-08-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer bonding process and structure |
FR3021455B1 (fr) * | 2014-05-21 | 2017-10-13 | St Microelectronics Crolles 2 Sas | Procede d'aplanissement d'evidements remplis de cuivre |
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FR3021455A1 (fr) | 2015-11-27 |
US20170179035A1 (en) | 2017-06-22 |
US9620385B2 (en) | 2017-04-11 |
US20150340269A1 (en) | 2015-11-26 |
US9865545B2 (en) | 2018-01-09 |
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