FR3019189B1 - Creuset, procede de fabrication du creuset, et procede de fabrication d'un materiau cristallin au moyen d'un tel creuset - Google Patents

Creuset, procede de fabrication du creuset, et procede de fabrication d'un materiau cristallin au moyen d'un tel creuset Download PDF

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Publication number
FR3019189B1
FR3019189B1 FR1400784A FR1400784A FR3019189B1 FR 3019189 B1 FR3019189 B1 FR 3019189B1 FR 1400784 A FR1400784 A FR 1400784A FR 1400784 A FR1400784 A FR 1400784A FR 3019189 B1 FR3019189 B1 FR 3019189B1
Authority
FR
France
Prior art keywords
manufacturing
cup
crystalline material
crucible
creuset
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1400784A
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English (en)
Other versions
FR3019189A1 (fr
Inventor
Denis Chavrier
Jean Paul Garandet
Etienne Pihan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1400784A priority Critical patent/FR3019189B1/fr
Priority to EP15717572.0A priority patent/EP3126549A1/fr
Priority to PCT/FR2015/050818 priority patent/WO2015150681A1/fr
Priority to US15/124,319 priority patent/US20170016140A1/en
Publication of FR3019189A1 publication Critical patent/FR3019189A1/fr
Application granted granted Critical
Publication of FR3019189B1 publication Critical patent/FR3019189B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/007—After-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/22—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to internal surfaces, e.g. of tubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/02—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method without using solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention concerne un creuset (1) pour la formation d'un matériau cristallin comportant un fond (2) et au moins une paroi latérale (3) orthogonale au fond (2), dont la face interne comprend au moins deux repères (4) suivant un axe orthogonal au fond (2) du creuset (1). Les positions respectives de deux au moins des repères (4) sur la face interne de la paroi latérale (3) sont choisies de sorte à définir un premier axe de découpe perpendiculaire à un plan tangent à la face interne de la paroi latérale (3) au niveau d'un premier repère et un deuxième axe de découpe passant par un deuxième repère et perpendiculaire au premier axe de découpe. L'invention se rapporte également au procédé de fabrication d'un tel creuset (1). Enfin, l'invention concerne un procédé de fabrication d'un matériau cristallin au moyen d'un tel creuset (1).
FR1400784A 2014-03-31 2014-03-31 Creuset, procede de fabrication du creuset, et procede de fabrication d'un materiau cristallin au moyen d'un tel creuset Expired - Fee Related FR3019189B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1400784A FR3019189B1 (fr) 2014-03-31 2014-03-31 Creuset, procede de fabrication du creuset, et procede de fabrication d'un materiau cristallin au moyen d'un tel creuset
EP15717572.0A EP3126549A1 (fr) 2014-03-31 2015-03-30 Creuset, procédé de fabrication du creuset, et procédé de fabrication d'un matériau cristallin au moyen d'un tel creuset
PCT/FR2015/050818 WO2015150681A1 (fr) 2014-03-31 2015-03-30 Creuset, procédé de fabrication du creuset, et procédé de fabrication d'un matériau cristallin au moyen d'un tel creuset
US15/124,319 US20170016140A1 (en) 2014-03-31 2015-03-30 Crucible, fabrication method of the crucible, and fabrication method of a crystalline material by means of such a crucible

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1400784A FR3019189B1 (fr) 2014-03-31 2014-03-31 Creuset, procede de fabrication du creuset, et procede de fabrication d'un materiau cristallin au moyen d'un tel creuset
FR1400784 2014-03-31

Publications (2)

Publication Number Publication Date
FR3019189A1 FR3019189A1 (fr) 2015-10-02
FR3019189B1 true FR3019189B1 (fr) 2018-07-27

Family

ID=50976738

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1400784A Expired - Fee Related FR3019189B1 (fr) 2014-03-31 2014-03-31 Creuset, procede de fabrication du creuset, et procede de fabrication d'un materiau cristallin au moyen d'un tel creuset

Country Status (4)

Country Link
US (1) US20170016140A1 (fr)
EP (1) EP3126549A1 (fr)
FR (1) FR3019189B1 (fr)
WO (1) WO2015150681A1 (fr)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1577413A (en) * 1976-03-17 1980-10-22 Metals Research Ltd Growth of crystalline material
USH520H (en) * 1985-12-06 1988-09-06 Technique for increasing oxygen incorporation during silicon czochralski crystal growth
US6277351B1 (en) * 2000-03-20 2001-08-21 Carl Francis Swinehart Crucible for growing macrocrystals
JP4545505B2 (ja) * 2004-07-22 2010-09-15 株式会社トクヤマ シリコンの製造方法
KR20130133884A (ko) * 2006-01-20 2013-12-09 에이엠지 아이디얼캐스트 솔라 코포레이션 광전 변환 소자용 단결정 캐스트 실리콘 및 단결정 캐스트 실리콘 바디들을 제조하는 방법 및 장치
TW200846509A (en) * 2007-01-19 2008-12-01 Vesuvius Crucible Co Crucible and filling method for melting a non-ferrous product
JP2011251891A (ja) * 2010-05-06 2011-12-15 Sumitomo Electric Ind Ltd 単結晶の製造方法および単結晶製造用るつぼ
DE102010048602A1 (de) * 2010-10-15 2012-04-19 Centrotherm Sitec Gmbh Schmelztiegel für Silizium, Schmelztiegelanordnung und Trenneinheit für einen Schmelztiegel
US20120167817A1 (en) * 2010-12-30 2012-07-05 Bernhard Freudenberg Method and device for producing silicon blocks
CN103827351B (zh) * 2011-08-31 2017-03-08 3M创新有限公司 高硬度的含氮化硅剥离层
FR2979638A1 (fr) 2011-09-05 2013-03-08 Commissariat Energie Atomique Dispositif de fabrication de materiau cristallin a partir d'un creuset a resistance thermique non uniforme

Also Published As

Publication number Publication date
EP3126549A1 (fr) 2017-02-08
US20170016140A1 (en) 2017-01-19
FR3019189A1 (fr) 2015-10-02
WO2015150681A1 (fr) 2015-10-08

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