FR2988535B1 - Circuit de pompage de charge a transistors munis de portes doubles en phase, et procédé de fonctionnement dudit circuit. - Google Patents

Circuit de pompage de charge a transistors munis de portes doubles en phase, et procédé de fonctionnement dudit circuit.

Info

Publication number
FR2988535B1
FR2988535B1 FR1252640A FR1252640A FR2988535B1 FR 2988535 B1 FR2988535 B1 FR 2988535B1 FR 1252640 A FR1252640 A FR 1252640A FR 1252640 A FR1252640 A FR 1252640A FR 2988535 B1 FR2988535 B1 FR 2988535B1
Authority
FR
France
Prior art keywords
circuit
doors
operating
double phase
load pump
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1252640A
Other languages
English (en)
Other versions
FR2988535A1 (fr
Inventor
Richard Ferrant
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1252640A priority Critical patent/FR2988535B1/fr
Priority to KR1020147027840A priority patent/KR101629812B1/ko
Priority to PCT/EP2013/056126 priority patent/WO2013139976A1/fr
Priority to TW102110253A priority patent/TWI593220B/zh
Priority to CN201380016083.7A priority patent/CN104205594B/zh
Priority to US14/384,129 priority patent/US9225237B2/en
Publication of FR2988535A1 publication Critical patent/FR2988535A1/fr
Application granted granted Critical
Publication of FR2988535B1 publication Critical patent/FR2988535B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • H02M3/078—Charge pumps of the Schenkel-type with means for reducing the back bias effect, i.e. the effect which causes the threshold voltage of transistors to increase as more stages are added to the converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR1252640A 2012-03-23 2012-03-23 Circuit de pompage de charge a transistors munis de portes doubles en phase, et procédé de fonctionnement dudit circuit. Active FR2988535B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1252640A FR2988535B1 (fr) 2012-03-23 2012-03-23 Circuit de pompage de charge a transistors munis de portes doubles en phase, et procédé de fonctionnement dudit circuit.
KR1020147027840A KR101629812B1 (ko) 2012-03-23 2013-03-22 다수의 게이트 트랜지스터들을 포함하는 차지 펌프 회로 및 그의 작동 방법
PCT/EP2013/056126 WO2013139976A1 (fr) 2012-03-23 2013-03-22 Circuit de pompe de charges comprenant des transistors à grilles multiples et son procédé de fonctionnement
TW102110253A TWI593220B (zh) 2012-03-23 2013-03-22 具有含同相雙閘極的電晶體之電荷幫浦電路及其操作方法
CN201380016083.7A CN104205594B (zh) 2012-03-23 2013-03-22 包含多栅极晶体管的电荷泵电路及其操作方法
US14/384,129 US9225237B2 (en) 2012-03-23 2013-03-22 Charge pump circuit comprising multiple—gate transistors and method of operating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1252640A FR2988535B1 (fr) 2012-03-23 2012-03-23 Circuit de pompage de charge a transistors munis de portes doubles en phase, et procédé de fonctionnement dudit circuit.

Publications (2)

Publication Number Publication Date
FR2988535A1 FR2988535A1 (fr) 2013-09-27
FR2988535B1 true FR2988535B1 (fr) 2014-03-07

Family

ID=47049224

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1252640A Active FR2988535B1 (fr) 2012-03-23 2012-03-23 Circuit de pompage de charge a transistors munis de portes doubles en phase, et procédé de fonctionnement dudit circuit.

Country Status (6)

Country Link
US (1) US9225237B2 (fr)
KR (1) KR101629812B1 (fr)
CN (1) CN104205594B (fr)
FR (1) FR2988535B1 (fr)
TW (1) TWI593220B (fr)
WO (1) WO2013139976A1 (fr)

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US9634559B2 (en) * 2014-02-07 2017-04-25 The Hong Kong University Of Science And Technology Charge pumping apparatus for low voltage and high efficiency operation
KR102277176B1 (ko) * 2015-02-23 2021-07-15 한국전자통신연구원 레벨 시프터 회로
KR101603120B1 (ko) * 2015-05-27 2016-03-14 (주)멜파스 전하 펌프
KR102295975B1 (ko) * 2015-09-17 2021-08-30 제너직 에이비 감소된 누설을 위한 sram 아키텍처들
CN105471256B (zh) * 2015-12-15 2020-11-17 格科微电子（上海）有限公司 电荷泵装置
US9904075B2 (en) 2015-12-22 2018-02-27 Johnson & Johnson Vision Care, Inc. High-voltage H-bridge control circuit for a lens driver of an electronic ophthalmic lens
DE102016106015A1 (de) * 2016-04-01 2017-10-05 Tdk Corporation Negative Ladungspumpe und Audio-ASIC mit einer negativen Ladungspumpe
US10090027B2 (en) * 2016-05-25 2018-10-02 Ememory Technology Inc. Memory system with low read power
US9917509B2 (en) * 2016-05-26 2018-03-13 Himax Technologies Limited Charge pump circuit outputting high voltage without high voltage-endurance electric devices
US9762245B1 (en) * 2016-06-14 2017-09-12 Globalfoundries Inc. Semiconductor structure with back-gate switching
US10236768B2 (en) 2017-05-19 2019-03-19 Globalfoundaries Inc. Switched-capacitor charge pump with reduced diode threshold voltage and on state resistance
US10109620B1 (en) * 2017-07-26 2018-10-23 Globalfoundries Inc. Method for reducing switch on state resistance of switched-capacitor charge pump using self-generated switching back-gate bias voltage
US10461636B2 (en) * 2017-10-23 2019-10-29 Stmicroelectronics International N.V. Voltage multiplier circuit with a common bulk and configured for positive and negative voltage generation
CN110620577B (zh) * 2019-10-12 2023-06-02 上海华力微电子有限公司 基于fdsoi结构的电平转换单元电路及版图设计方法
US11139004B2 (en) * 2019-10-25 2021-10-05 Texas Instruments Incorporated Charge pump circuit and auxiliary power supply
US11081973B1 (en) * 2019-10-30 2021-08-03 Dialog Semiconductor B.V. High voltage tolerant inverter
KR20220064561A (ko) * 2020-11-12 2022-05-19 삼성전기주식회사 레귤레이터 회로 및 이를 포함하는 프런트 엔드 모듈
US11563373B2 (en) * 2020-11-19 2023-01-24 Stmicroelectronics International N.V. Circuit and method for controlled discharge of a high (positive or negative) voltage charge pump
IT202100002585A1 (it) * 2021-02-05 2022-08-05 Sk Hynix Inc Architettura di pompa di carica
CN114779870B (zh) * 2022-05-11 2023-10-20 中科芯磁科技(珠海)有限责任公司 电压自适应调整电路和芯片
CN115224932B (zh) * 2022-08-24 2023-03-10 北京智芯微电子科技有限公司 电荷泵电路、芯片及电子设备

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AU5165798A (en) * 1996-11-05 1998-05-29 Aplus Flash Technology, Inc. Positive/negative high voltage charge pump system
FR2781940B1 (fr) 1998-07-31 2000-10-06 St Microelectronics Sa Amplificateur dont la sortance varie en fonction du temps
FR2794301B1 (fr) 1999-05-28 2004-10-08 St Microelectronics Sa Procede de multiplication de tension, et dispositif multiplicateur de tension correspondant
KR100296861B1 (ko) * 1999-07-09 2001-07-12 이장무 전하 펌프
FR2810151B1 (fr) 2000-06-13 2005-04-29 St Microelectronics Sa Dispositif de regulation de tension pour cellule de reference d'une memoire vive dynamique, cellule de reference, memoire et procede associe
FR2818425B1 (fr) 2000-12-15 2003-04-04 St Microelectronics Sa Amplificateur de lecture de cellules memoire a fonction logique de type ou-exclusif
US6518818B1 (en) * 2001-09-17 2003-02-11 Honeywell International Inc. High voltage CMOS output driver in low voltage process
KR100404001B1 (ko) * 2001-12-29 2003-11-05 주식회사 하이닉스반도체 차지 펌프 회로
KR100562651B1 (ko) 2003-10-30 2006-03-20 주식회사 하이닉스반도체 다단 전압 펌프 회로
JP2005339658A (ja) * 2004-05-26 2005-12-08 Toshiba Corp 昇圧回路
FR2919112A1 (fr) 2007-07-16 2009-01-23 St Microelectronics Crolles 2 Circuit integre comprenant un transistor et un condensateur et procede de fabrication
WO2009047715A1 (fr) * 2007-10-11 2009-04-16 Nxp B.V. Pompe à charge de dickson de faible puissance
US8823443B2 (en) * 2008-12-18 2014-09-02 Nxp B.V. Charge-pump circuit
FR2957449B1 (fr) 2010-03-11 2022-07-15 S O I Tec Silicon On Insulator Tech Micro-amplificateur de lecture pour memoire
FR2958441B1 (fr) 2010-04-02 2012-07-13 Soitec Silicon On Insulator Circuit pseudo-inverseur sur seoi
EP2500933A1 (fr) 2011-03-11 2012-09-19 S.O.I. TEC Silicon Structure multicouche et procédé de fabrication de dispositifs semi-conducteurs
FR2974667B1 (fr) 2011-04-26 2020-10-02 S O I Tec Silicon On Insulator Tech Amplificateur de detection differentiel sans transistor de commutation
FR2974656B1 (fr) 2011-04-26 2013-05-17 Soitec Silicon On Insulator Amplificateur de detection differentiel sans transistor a grille de passage dedie
FR2974666B1 (fr) 2011-04-26 2013-05-17 Soitec Silicon On Insulator Amplificateur de detection differentiel sans transistor de precharge dedie

Also Published As

Publication number Publication date
TWI593220B (zh) 2017-07-21
WO2013139976A1 (fr) 2013-09-26
CN104205594A (zh) 2014-12-10
CN104205594B (zh) 2017-09-15
TW201347378A (zh) 2013-11-16
KR101629812B1 (ko) 2016-06-13
US9225237B2 (en) 2015-12-29
FR2988535A1 (fr) 2013-09-27
KR20140131580A (ko) 2014-11-13
US20150263610A1 (en) 2015-09-17

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