FR2988219B1 - Procedes de formation de structures semi-conductrices comprenant un materiau semi-conducteur des groupes iii-v en utilisant des substrats comprenant du molybdene, et structures formees par ces procedes - Google Patents

Procedes de formation de structures semi-conductrices comprenant un materiau semi-conducteur des groupes iii-v en utilisant des substrats comprenant du molybdene, et structures formees par ces procedes

Info

Publication number
FR2988219B1
FR2988219B1 FR1252408A FR1252408A FR2988219B1 FR 2988219 B1 FR2988219 B1 FR 2988219B1 FR 1252408 A FR1252408 A FR 1252408A FR 1252408 A FR1252408 A FR 1252408A FR 2988219 B1 FR2988219 B1 FR 2988219B1
Authority
FR
France
Prior art keywords
structures
molybdenum
substrates
iii
groups
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1252408A
Other languages
English (en)
Other versions
FR2988219A1 (fr
Inventor
Christiaan J Werkhoven
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1252408A priority Critical patent/FR2988219B1/fr
Priority to PCT/IB2013/000564 priority patent/WO2013132332A1/fr
Publication of FR2988219A1 publication Critical patent/FR2988219A1/fr
Application granted granted Critical
Publication of FR2988219B1 publication Critical patent/FR2988219B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR1252408A 2012-03-09 2012-03-16 Procedes de formation de structures semi-conductrices comprenant un materiau semi-conducteur des groupes iii-v en utilisant des substrats comprenant du molybdene, et structures formees par ces procedes Expired - Fee Related FR2988219B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1252408A FR2988219B1 (fr) 2012-03-16 2012-03-16 Procedes de formation de structures semi-conductrices comprenant un materiau semi-conducteur des groupes iii-v en utilisant des substrats comprenant du molybdene, et structures formees par ces procedes
PCT/IB2013/000564 WO2013132332A1 (fr) 2012-03-09 2013-03-05 Procédés permettant de former des structures semi-conductrices incluant du matériau semi-conducteur iii-v au moyen de substrats comprenant du molybdène, et structures formées par de tels procédés

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1252408A FR2988219B1 (fr) 2012-03-16 2012-03-16 Procedes de formation de structures semi-conductrices comprenant un materiau semi-conducteur des groupes iii-v en utilisant des substrats comprenant du molybdene, et structures formees par ces procedes

Publications (2)

Publication Number Publication Date
FR2988219A1 FR2988219A1 (fr) 2013-09-20
FR2988219B1 true FR2988219B1 (fr) 2015-03-13

Family

ID=47019074

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1252408A Expired - Fee Related FR2988219B1 (fr) 2012-03-09 2012-03-16 Procedes de formation de structures semi-conductrices comprenant un materiau semi-conducteur des groupes iii-v en utilisant des substrats comprenant du molybdene, et structures formees par ces procedes

Country Status (1)

Country Link
FR (1) FR2988219B1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11688601B2 (en) 2020-11-30 2023-06-27 International Business Machines Corporation Obtaining a clean nitride surface by annealing

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200707799A (en) * 2005-04-21 2007-02-16 Aonex Technologies Inc Bonded intermediate substrate and method of making same
KR20070102114A (ko) * 2006-04-14 2007-10-18 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조 방법
US7482674B1 (en) * 2007-12-17 2009-01-27 The United States Of America As Represented By The Secretary Of The Navy Crystalline III-V nitride films on refractory metal substrates

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11688601B2 (en) 2020-11-30 2023-06-27 International Business Machines Corporation Obtaining a clean nitride surface by annealing

Also Published As

Publication number Publication date
FR2988219A1 (fr) 2013-09-20

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