FR2987166B1 - Procede de transfert d'une couche - Google Patents
Procede de transfert d'une coucheInfo
- Publication number
- FR2987166B1 FR2987166B1 FR1200449A FR1200449A FR2987166B1 FR 2987166 B1 FR2987166 B1 FR 2987166B1 FR 1200449 A FR1200449 A FR 1200449A FR 1200449 A FR1200449 A FR 1200449A FR 2987166 B1 FR2987166 B1 FR 2987166B1
- Authority
- FR
- France
- Prior art keywords
- transferring
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/14—Semiconductor wafers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Micromachines (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1200449A FR2987166B1 (fr) | 2012-02-16 | 2012-02-16 | Procede de transfert d'une couche |
PCT/IB2013/000128 WO2013121260A1 (fr) | 2012-02-16 | 2013-01-28 | Procédé de transfert d'une couche |
CN201380009581.9A CN104170073B (zh) | 2012-02-16 | 2013-01-28 | 用于转移层的方法 |
DE112013000985.4T DE112013000985T5 (de) | 2012-02-16 | 2013-01-28 | Verfahren zum Übertragen einer Schicht |
US14/377,738 US9548237B2 (en) | 2012-02-16 | 2013-01-28 | Method for transferring a layer comprising a compressive stress layer and related structures |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1200449A FR2987166B1 (fr) | 2012-02-16 | 2012-02-16 | Procede de transfert d'une couche |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2987166A1 FR2987166A1 (fr) | 2013-08-23 |
FR2987166B1 true FR2987166B1 (fr) | 2017-05-12 |
Family
ID=47716127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1200449A Active FR2987166B1 (fr) | 2012-02-16 | 2012-02-16 | Procede de transfert d'une couche |
Country Status (5)
Country | Link |
---|---|
US (1) | US9548237B2 (fr) |
CN (1) | CN104170073B (fr) |
DE (1) | DE112013000985T5 (fr) |
FR (1) | FR2987166B1 (fr) |
WO (1) | WO2013121260A1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3032555B1 (fr) * | 2015-02-10 | 2018-01-19 | Soitec | Procede de report d'une couche utile |
FR3062398B1 (fr) * | 2017-02-02 | 2021-07-30 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat pour la croissance d'un film bidimensionnel de structure cristalline hexagonale |
CN110491827B (zh) * | 2019-08-13 | 2021-02-12 | 北京工业大学 | 一种半导体薄膜层的转移方法及复合晶圆的制备方法 |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6033974A (en) | 1997-05-12 | 2000-03-07 | Silicon Genesis Corporation | Method for controlled cleaving process |
FR2777115B1 (fr) | 1998-04-07 | 2001-07-13 | Commissariat Energie Atomique | Procede de traitement de substrats semi-conducteurs et structures obtenues par ce procede |
FR2797713B1 (fr) | 1999-08-20 | 2002-08-02 | Soitec Silicon On Insulator | Procede de traitement de substrats pour la microelectronique et substrats obtenus par ce procede |
FR2797714B1 (fr) | 1999-08-20 | 2001-10-26 | Soitec Silicon On Insulator | Procede de traitement de substrats pour la microelectronique et substrats obtenus par ce procede |
US7074623B2 (en) * | 2002-06-07 | 2006-07-11 | Amberwave Systems Corporation | Methods of forming strained-semiconductor-on-insulator finFET device structures |
US20030227057A1 (en) * | 2002-06-07 | 2003-12-11 | Lochtefeld Anthony J. | Strained-semiconductor-on-insulator device structures |
US6953736B2 (en) * | 2002-07-09 | 2005-10-11 | S.O.I.Tec Silicon On Insulator Technologies S.A. | Process for transferring a layer of strained semiconductor material |
US6911379B2 (en) * | 2003-03-05 | 2005-06-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming strained silicon on insulator substrate |
US7202124B2 (en) * | 2004-10-01 | 2007-04-10 | Massachusetts Institute Of Technology | Strained gettering layers for semiconductor processes |
EP1835533B1 (fr) * | 2006-03-14 | 2020-06-03 | Soitec | Méthode de fabrication de plaquettes composites et procédé de recyclage d'un substrat donneur usagé |
CN101529578B (zh) | 2006-10-27 | 2012-01-11 | 硅绝缘体技术有限公司 | 用于转移在具有空位团的基片中形成的薄层的改进方法 |
FR2910177B1 (fr) | 2006-12-18 | 2009-04-03 | Soitec Silicon On Insulator | Couche tres fine enterree |
JP5185284B2 (ja) | 2006-12-26 | 2013-04-17 | ソイテック | 半導体オンインシュレータ構造体を製造する方法 |
KR101358361B1 (ko) | 2006-12-26 | 2014-02-06 | 소이텍 | 절연체 상 반도체 구조물을 제조하는 방법 |
ATE518241T1 (de) | 2007-01-24 | 2011-08-15 | Soitec Silicon On Insulator | Herstellungsverfahren für wafer aus silizium auf isolator und entsprechender wafer |
EP1986229A1 (fr) | 2007-04-27 | 2008-10-29 | S.O.I.T.E.C. Silicon on Insulator Technologies | Procédé de fabrication de galettes de matériau composé et galette de matériau composé correspondante |
FR2926925B1 (fr) | 2008-01-29 | 2010-06-25 | Soitec Silicon On Insulator | Procede de fabrication d'heterostructures |
EP2161741B1 (fr) | 2008-09-03 | 2014-06-11 | Soitec | Procédé de fabrication d'un semi-conducteur sur un substrat isolant doté d'une densité réduite de défauts SECCO |
FR2936356B1 (fr) | 2008-09-23 | 2010-10-22 | Soitec Silicon On Insulator | Procede de dissolution locale de la couche d'oxyde dans une structure de type semi-conducteur sur isolant |
FR2937797B1 (fr) | 2008-10-28 | 2010-12-24 | S O I Tec Silicon On Insulator Tech | Procede de fabrication et de traitement d'une structure de type semi-conducteur sur isolant, permettant de deplacer des dislocations, et structure correspondante |
FR2938119B1 (fr) | 2008-10-30 | 2011-04-22 | Soitec Silicon On Insulator | Procede de detachement de couches semi-conductrices a basse temperature |
FR2938202B1 (fr) | 2008-11-07 | 2010-12-31 | Soitec Silicon On Insulator | Traitement de surface pour adhesion moleculaire |
FR2953328B1 (fr) | 2009-12-01 | 2012-03-30 | S O I Tec Silicon On Insulator Tech | Heterostructure pour composants electroniques de puissance, composants optoelectroniques ou photovoltaiques |
FR2962594B1 (fr) | 2010-07-07 | 2012-08-31 | Soitec Silicon On Insulator | Procede de collage par adhesion moleculaire avec compensation de desalignement radial |
US8481406B2 (en) | 2010-07-15 | 2013-07-09 | Soitec | Methods of forming bonded semiconductor structures |
US8461017B2 (en) | 2010-07-19 | 2013-06-11 | Soitec | Methods of forming bonded semiconductor structures using a temporary carrier having a weakened ion implant region for subsequent separation along the weakened region |
FR2965398B1 (fr) | 2010-09-23 | 2012-10-12 | Soitec Silicon On Insulator | Procédé de collage par adhésion moléculaire avec réduction de desalignement de type overlay |
FR2973159B1 (fr) | 2011-03-22 | 2013-04-19 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat de base |
US8501537B2 (en) | 2011-03-31 | 2013-08-06 | Soitec | Methods for bonding semiconductor structures involving annealing processes, and bonded semiconductor structures formed using such methods |
US8716105B2 (en) | 2011-03-31 | 2014-05-06 | Soitec | Methods for bonding semiconductor structures involving annealing processes, and bonded semiconductor structures and intermediate structures formed using such methods |
FR2978603B1 (fr) | 2011-07-28 | 2013-08-23 | Soitec Silicon On Insulator | Procede de transfert d'une couche semi-conductrice monocristalline sur un substrat support |
US8673733B2 (en) | 2011-09-27 | 2014-03-18 | Soitec | Methods of transferring layers of material in 3D integration processes and related structures and devices |
US8841742B2 (en) | 2011-09-27 | 2014-09-23 | Soitec | Low temperature layer transfer process using donor structure with material in recesses in transfer layer, semiconductor structures fabricated using such methods |
US9136134B2 (en) | 2012-02-22 | 2015-09-15 | Soitec | Methods of providing thin layers of crystalline semiconductor material, and related structures and devices |
-
2012
- 2012-02-16 FR FR1200449A patent/FR2987166B1/fr active Active
-
2013
- 2013-01-28 DE DE112013000985.4T patent/DE112013000985T5/de active Pending
- 2013-01-28 WO PCT/IB2013/000128 patent/WO2013121260A1/fr active Application Filing
- 2013-01-28 US US14/377,738 patent/US9548237B2/en active Active
- 2013-01-28 CN CN201380009581.9A patent/CN104170073B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
DE112013000985T5 (de) | 2014-11-27 |
CN104170073A (zh) | 2014-11-26 |
US20150364364A1 (en) | 2015-12-17 |
CN104170073B (zh) | 2017-12-08 |
US9548237B2 (en) | 2017-01-17 |
FR2987166A1 (fr) | 2013-08-23 |
WO2013121260A1 (fr) | 2013-08-22 |
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