FR2992464B1 - Procede de transfert d'une couche - Google Patents

Procede de transfert d'une couche

Info

Publication number
FR2992464B1
FR2992464B1 FR1201802A FR1201802A FR2992464B1 FR 2992464 B1 FR2992464 B1 FR 2992464B1 FR 1201802 A FR1201802 A FR 1201802A FR 1201802 A FR1201802 A FR 1201802A FR 2992464 B1 FR2992464 B1 FR 2992464B1
Authority
FR
France
Prior art keywords
transferring
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1201802A
Other languages
English (en)
Other versions
FR2992464A1 (fr
Inventor
Michel Bruel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1201802A priority Critical patent/FR2992464B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Priority to SG11201408606TA priority patent/SG11201408606TA/en
Priority to CN201380033314.5A priority patent/CN104584203B/zh
Priority to US14/409,361 priority patent/US9343351B2/en
Priority to KR1020147036692A priority patent/KR102007315B1/ko
Priority to PCT/IB2013/001252 priority patent/WO2014001869A1/fr
Priority to JP2015519373A priority patent/JP6138931B2/ja
Priority to EP13735407.2A priority patent/EP2865004B1/fr
Publication of FR2992464A1 publication Critical patent/FR2992464A1/fr
Application granted granted Critical
Publication of FR2992464B1 publication Critical patent/FR2992464B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/12OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Recrystallisation Techniques (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Products (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Heat Sensitive Colour Forming Recording (AREA)
  • Electromagnetism (AREA)
FR1201802A 2012-06-26 2012-06-26 Procede de transfert d'une couche Active FR2992464B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1201802A FR2992464B1 (fr) 2012-06-26 2012-06-26 Procede de transfert d'une couche
CN201380033314.5A CN104584203B (zh) 2012-06-26 2013-06-14 用于转印层的工艺
US14/409,361 US9343351B2 (en) 2012-06-26 2013-06-14 Process for transferring a layer
KR1020147036692A KR102007315B1 (ko) 2012-06-26 2013-06-14 층을 전사하기 위한 프로세스
SG11201408606TA SG11201408606TA (en) 2012-06-26 2013-06-14 Process for transferring a layer
PCT/IB2013/001252 WO2014001869A1 (fr) 2012-06-26 2013-06-14 Processus permettant de transférer une couche
JP2015519373A JP6138931B2 (ja) 2012-06-26 2013-06-14 層を転写するためのプロセス
EP13735407.2A EP2865004B1 (fr) 2012-06-26 2013-06-14 Processus permettant de transférer une couche

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1201802A FR2992464B1 (fr) 2012-06-26 2012-06-26 Procede de transfert d'une couche

Publications (2)

Publication Number Publication Date
FR2992464A1 FR2992464A1 (fr) 2013-12-27
FR2992464B1 true FR2992464B1 (fr) 2015-04-03

Family

ID=48782549

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1201802A Active FR2992464B1 (fr) 2012-06-26 2012-06-26 Procede de transfert d'une couche

Country Status (8)

Country Link
US (1) US9343351B2 (fr)
EP (1) EP2865004B1 (fr)
JP (1) JP6138931B2 (fr)
KR (1) KR102007315B1 (fr)
CN (1) CN104584203B (fr)
FR (1) FR2992464B1 (fr)
SG (1) SG11201408606TA (fr)
WO (1) WO2014001869A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3007892B1 (fr) * 2013-06-27 2015-07-31 Commissariat Energie Atomique Procede de transfert d'une couche mince avec apport d'energie thermique a une zone fragilisee via une couche inductive
US9966466B2 (en) * 2016-08-08 2018-05-08 Globalfoundries Inc. Semiconductor-on-insulator wafer, semiconductor structure including a transistor, and methods for the formation and operation thereof
CN108365083B (zh) * 2018-02-07 2022-03-08 济南晶正电子科技有限公司 用于声表面波器件的复合压电衬底的制造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1143394C (zh) * 1996-08-27 2004-03-24 精工爱普生株式会社 剥离方法、溥膜器件的转移方法和薄膜器件
US6291314B1 (en) * 1998-06-23 2001-09-18 Silicon Genesis Corporation Controlled cleavage process and device for patterned films using a release layer
TW452866B (en) * 2000-02-25 2001-09-01 Lee Tien Hsi Manufacturing method of thin film on a substrate
FR2817394B1 (fr) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
FR2855909B1 (fr) * 2003-06-06 2005-08-26 Soitec Silicon On Insulator Procede d'obtention concomitante d'au moins une paire de structures comprenant au moins une couche utile reportee sur un substrat
US7052978B2 (en) * 2003-08-28 2006-05-30 Intel Corporation Arrangements incorporating laser-induced cleaving
FR2860249B1 (fr) * 2003-09-30 2005-12-09 Michel Bruel Procede de fabrication d'une structure en forme de plaque, en particulier en silicium, application de procede, et structure en forme de plaque, en particulier en silicium
US20060240275A1 (en) * 2005-04-25 2006-10-26 Gadkaree Kishor P Flexible display substrates
DE102006007293B4 (de) * 2006-01-31 2023-04-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines Quasi-Substratwafers und ein unter Verwendung eines solchen Quasi-Substratwafers hergestellter Halbleiterkörper
JP5284576B2 (ja) * 2006-11-10 2013-09-11 信越化学工業株式会社 半導体基板の製造方法
JP2008153411A (ja) * 2006-12-18 2008-07-03 Shin Etsu Chem Co Ltd Soi基板の製造方法
EP1986229A1 (fr) * 2007-04-27 2008-10-29 S.O.I.T.E.C. Silicon on Insulator Technologies Procédé de fabrication de galettes de matériau composé et galette de matériau composé correspondante
US20090179160A1 (en) * 2008-01-16 2009-07-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor substrate manufacturing apparatus
KR20100008123A (ko) * 2008-07-15 2010-01-25 고려대학교 산학협력단 이중 히트 씽크층으로 구성된 지지대를 갖춘 고성능수직구조의 반도체 발광소자
JP5496608B2 (ja) * 2008-11-12 2014-05-21 信越化学工業株式会社 Soi基板の作製方法
JP5643509B2 (ja) 2009-12-28 2014-12-17 信越化学工業株式会社 応力を低減したsos基板の製造方法
CN101866874B (zh) * 2010-06-01 2013-05-22 中国科学院上海微***与信息技术研究所 一种利用层转移技术制备绝缘体上锗硅材料的方法

Also Published As

Publication number Publication date
CN104584203B (zh) 2018-03-20
EP2865004B1 (fr) 2020-07-29
JP6138931B2 (ja) 2017-05-31
SG11201408606TA (en) 2015-01-29
KR102007315B1 (ko) 2019-08-06
US9343351B2 (en) 2016-05-17
FR2992464A1 (fr) 2013-12-27
KR20150023514A (ko) 2015-03-05
EP2865004A1 (fr) 2015-04-29
WO2014001869A1 (fr) 2014-01-03
JP2015525964A (ja) 2015-09-07
CN104584203A (zh) 2015-04-29
US20150187638A1 (en) 2015-07-02

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