FR2992464B1 - Procede de transfert d'une couche - Google Patents
Procede de transfert d'une coucheInfo
- Publication number
- FR2992464B1 FR2992464B1 FR1201802A FR1201802A FR2992464B1 FR 2992464 B1 FR2992464 B1 FR 2992464B1 FR 1201802 A FR1201802 A FR 1201802A FR 1201802 A FR1201802 A FR 1201802A FR 2992464 B1 FR2992464 B1 FR 2992464B1
- Authority
- FR
- France
- Prior art keywords
- transferring
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Recrystallisation Techniques (AREA)
- High Energy & Nuclear Physics (AREA)
- Ceramic Products (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Heat Sensitive Colour Forming Recording (AREA)
- Electromagnetism (AREA)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1201802A FR2992464B1 (fr) | 2012-06-26 | 2012-06-26 | Procede de transfert d'une couche |
CN201380033314.5A CN104584203B (zh) | 2012-06-26 | 2013-06-14 | 用于转印层的工艺 |
US14/409,361 US9343351B2 (en) | 2012-06-26 | 2013-06-14 | Process for transferring a layer |
KR1020147036692A KR102007315B1 (ko) | 2012-06-26 | 2013-06-14 | 층을 전사하기 위한 프로세스 |
SG11201408606TA SG11201408606TA (en) | 2012-06-26 | 2013-06-14 | Process for transferring a layer |
PCT/IB2013/001252 WO2014001869A1 (fr) | 2012-06-26 | 2013-06-14 | Processus permettant de transférer une couche |
JP2015519373A JP6138931B2 (ja) | 2012-06-26 | 2013-06-14 | 層を転写するためのプロセス |
EP13735407.2A EP2865004B1 (fr) | 2012-06-26 | 2013-06-14 | Processus permettant de transférer une couche |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1201802A FR2992464B1 (fr) | 2012-06-26 | 2012-06-26 | Procede de transfert d'une couche |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2992464A1 FR2992464A1 (fr) | 2013-12-27 |
FR2992464B1 true FR2992464B1 (fr) | 2015-04-03 |
Family
ID=48782549
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1201802A Active FR2992464B1 (fr) | 2012-06-26 | 2012-06-26 | Procede de transfert d'une couche |
Country Status (8)
Country | Link |
---|---|
US (1) | US9343351B2 (fr) |
EP (1) | EP2865004B1 (fr) |
JP (1) | JP6138931B2 (fr) |
KR (1) | KR102007315B1 (fr) |
CN (1) | CN104584203B (fr) |
FR (1) | FR2992464B1 (fr) |
SG (1) | SG11201408606TA (fr) |
WO (1) | WO2014001869A1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3007892B1 (fr) * | 2013-06-27 | 2015-07-31 | Commissariat Energie Atomique | Procede de transfert d'une couche mince avec apport d'energie thermique a une zone fragilisee via une couche inductive |
US9966466B2 (en) * | 2016-08-08 | 2018-05-08 | Globalfoundries Inc. | Semiconductor-on-insulator wafer, semiconductor structure including a transistor, and methods for the formation and operation thereof |
CN108365083B (zh) * | 2018-02-07 | 2022-03-08 | 济南晶正电子科技有限公司 | 用于声表面波器件的复合压电衬底的制造方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1143394C (zh) * | 1996-08-27 | 2004-03-24 | 精工爱普生株式会社 | 剥离方法、溥膜器件的转移方法和薄膜器件 |
US6291314B1 (en) * | 1998-06-23 | 2001-09-18 | Silicon Genesis Corporation | Controlled cleavage process and device for patterned films using a release layer |
TW452866B (en) * | 2000-02-25 | 2001-09-01 | Lee Tien Hsi | Manufacturing method of thin film on a substrate |
FR2817394B1 (fr) * | 2000-11-27 | 2003-10-31 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede |
FR2855909B1 (fr) * | 2003-06-06 | 2005-08-26 | Soitec Silicon On Insulator | Procede d'obtention concomitante d'au moins une paire de structures comprenant au moins une couche utile reportee sur un substrat |
US7052978B2 (en) * | 2003-08-28 | 2006-05-30 | Intel Corporation | Arrangements incorporating laser-induced cleaving |
FR2860249B1 (fr) * | 2003-09-30 | 2005-12-09 | Michel Bruel | Procede de fabrication d'une structure en forme de plaque, en particulier en silicium, application de procede, et structure en forme de plaque, en particulier en silicium |
US20060240275A1 (en) * | 2005-04-25 | 2006-10-26 | Gadkaree Kishor P | Flexible display substrates |
DE102006007293B4 (de) * | 2006-01-31 | 2023-04-06 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen eines Quasi-Substratwafers und ein unter Verwendung eines solchen Quasi-Substratwafers hergestellter Halbleiterkörper |
JP5284576B2 (ja) * | 2006-11-10 | 2013-09-11 | 信越化学工業株式会社 | 半導体基板の製造方法 |
JP2008153411A (ja) * | 2006-12-18 | 2008-07-03 | Shin Etsu Chem Co Ltd | Soi基板の製造方法 |
EP1986229A1 (fr) * | 2007-04-27 | 2008-10-29 | S.O.I.T.E.C. Silicon on Insulator Technologies | Procédé de fabrication de galettes de matériau composé et galette de matériau composé correspondante |
US20090179160A1 (en) * | 2008-01-16 | 2009-07-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor substrate manufacturing apparatus |
KR20100008123A (ko) * | 2008-07-15 | 2010-01-25 | 고려대학교 산학협력단 | 이중 히트 씽크층으로 구성된 지지대를 갖춘 고성능수직구조의 반도체 발광소자 |
JP5496608B2 (ja) * | 2008-11-12 | 2014-05-21 | 信越化学工業株式会社 | Soi基板の作製方法 |
JP5643509B2 (ja) | 2009-12-28 | 2014-12-17 | 信越化学工業株式会社 | 応力を低減したsos基板の製造方法 |
CN101866874B (zh) * | 2010-06-01 | 2013-05-22 | 中国科学院上海微***与信息技术研究所 | 一种利用层转移技术制备绝缘体上锗硅材料的方法 |
-
2012
- 2012-06-26 FR FR1201802A patent/FR2992464B1/fr active Active
-
2013
- 2013-06-14 JP JP2015519373A patent/JP6138931B2/ja active Active
- 2013-06-14 SG SG11201408606TA patent/SG11201408606TA/en unknown
- 2013-06-14 KR KR1020147036692A patent/KR102007315B1/ko active IP Right Grant
- 2013-06-14 CN CN201380033314.5A patent/CN104584203B/zh active Active
- 2013-06-14 WO PCT/IB2013/001252 patent/WO2014001869A1/fr active Application Filing
- 2013-06-14 US US14/409,361 patent/US9343351B2/en active Active
- 2013-06-14 EP EP13735407.2A patent/EP2865004B1/fr active Active
Also Published As
Publication number | Publication date |
---|---|
CN104584203B (zh) | 2018-03-20 |
EP2865004B1 (fr) | 2020-07-29 |
JP6138931B2 (ja) | 2017-05-31 |
SG11201408606TA (en) | 2015-01-29 |
KR102007315B1 (ko) | 2019-08-06 |
US9343351B2 (en) | 2016-05-17 |
FR2992464A1 (fr) | 2013-12-27 |
KR20150023514A (ko) | 2015-03-05 |
EP2865004A1 (fr) | 2015-04-29 |
WO2014001869A1 (fr) | 2014-01-03 |
JP2015525964A (ja) | 2015-09-07 |
CN104584203A (zh) | 2015-04-29 |
US20150187638A1 (en) | 2015-07-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR3000600B1 (fr) | Procede microelectronique de gravure d'une couche | |
PL2634010T3 (pl) | Folia do hydrodruku | |
HK1202487A1 (en) | Optical effect layer | |
EP2804207A4 (fr) | Procédé de fabrication de substrat de matrice de transistors à couches minces | |
EP2697840A4 (fr) | Couche d'extraction optique interne pour dispositifs oled | |
TWI561353B (en) | Apparatus for transferring substrate | |
EP2685110A4 (fr) | Circuit hydraulique pour dispositif de pose de tuyau | |
TWI560309B (en) | Film deposition method | |
SG11201400496VA (en) | Double layer transfer method | |
FR3008904B1 (fr) | Procede de formation d'une couche hydrophobe | |
SI2825490T1 (sl) | Postopek za prenos plasti izdelkov med sosednjimi moduli | |
FR2993074B1 (fr) | Procede de tatouage de livres numeriques | |
FR3020175B1 (fr) | Procede de transfert d'une couche utile | |
FR3008507B1 (fr) | Procede de modelisation d'une surface non-axisymetrique | |
FR2998290B1 (fr) | Procede de potabilisation | |
FR3001642B1 (fr) | Procede de recouvrement de surfaces | |
FR3003686B1 (fr) | Procede de formation d'une couche de silicium contraint | |
FR2984685B1 (fr) | Procede pour proteger le mais | |
FR2995231B1 (fr) | Procede de trefilage | |
FR2970981B3 (fr) | Element de revetement de sol pour zones de circulation | |
EP2840062A4 (fr) | Procédé d'utilisation d'iodure de fluoroalkyle | |
FR2993808B1 (fr) | Procede pour la pre-texturation d'une couche de polissage mecano-chimique | |
FR2997692B1 (fr) | Systeme et procede de transfert de fluide | |
FR2988516B1 (fr) | Procede d'implantation de fragilisation de substrats ameliore | |
FR2992464B1 (fr) | Procede de transfert d'une couche |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 5 |
|
PLFP | Fee payment |
Year of fee payment: 6 |
|
PLFP | Fee payment |
Year of fee payment: 7 |
|
PLFP | Fee payment |
Year of fee payment: 9 |
|
PLFP | Fee payment |
Year of fee payment: 10 |
|
PLFP | Fee payment |
Year of fee payment: 11 |
|
PLFP | Fee payment |
Year of fee payment: 12 |
|
PLFP | Fee payment |
Year of fee payment: 13 |