FR2980041B1 - Transistor a effet de champ comprenant un limiteur de courant de fuite - Google Patents

Transistor a effet de champ comprenant un limiteur de courant de fuite

Info

Publication number
FR2980041B1
FR2980041B1 FR1158182A FR1158182A FR2980041B1 FR 2980041 B1 FR2980041 B1 FR 2980041B1 FR 1158182 A FR1158182 A FR 1158182A FR 1158182 A FR1158182 A FR 1158182A FR 2980041 B1 FR2980041 B1 FR 2980041B1
Authority
FR
France
Prior art keywords
field effect
effect transistor
leakage current
current limiter
limiter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1158182A
Other languages
English (en)
Other versions
FR2980041A1 (fr
Inventor
Mohammed Benwadih
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1158182A priority Critical patent/FR2980041B1/fr
Priority to PCT/FR2012/051798 priority patent/WO2013038082A1/fr
Priority to EP12753770.2A priority patent/EP2756532A1/fr
Publication of FR2980041A1 publication Critical patent/FR2980041A1/fr
Priority to US14/200,577 priority patent/US9112160B2/en
Application granted granted Critical
Publication of FR2980041B1 publication Critical patent/FR2980041B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
FR1158182A 2011-09-14 2011-09-14 Transistor a effet de champ comprenant un limiteur de courant de fuite Expired - Fee Related FR2980041B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1158182A FR2980041B1 (fr) 2011-09-14 2011-09-14 Transistor a effet de champ comprenant un limiteur de courant de fuite
PCT/FR2012/051798 WO2013038082A1 (fr) 2011-09-14 2012-07-30 Transistor a effet de champ comprenant un limiteur de courant de fuite
EP12753770.2A EP2756532A1 (fr) 2011-09-14 2012-07-30 Transistor a effet de champ comprenant un limiteur de courant de fuite
US14/200,577 US9112160B2 (en) 2011-09-14 2014-03-07 Field-effect transistor comprising a leakage-current limiter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1158182A FR2980041B1 (fr) 2011-09-14 2011-09-14 Transistor a effet de champ comprenant un limiteur de courant de fuite

Publications (2)

Publication Number Publication Date
FR2980041A1 FR2980041A1 (fr) 2013-03-15
FR2980041B1 true FR2980041B1 (fr) 2016-02-05

Family

ID=46785759

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1158182A Expired - Fee Related FR2980041B1 (fr) 2011-09-14 2011-09-14 Transistor a effet de champ comprenant un limiteur de courant de fuite

Country Status (4)

Country Link
US (1) US9112160B2 (fr)
EP (1) EP2756532A1 (fr)
FR (1) FR2980041B1 (fr)
WO (1) WO2013038082A1 (fr)

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6998068B2 (en) * 2003-08-15 2006-02-14 3M Innovative Properties Company Acene-thiophene semiconductors
US6674121B2 (en) * 2001-12-14 2004-01-06 The Regents Of The University Of California Method and system for molecular charge storage field effect transistor
EP2204861A1 (fr) * 2001-12-19 2010-07-07 Merck Patent GmbH Dispositifs électroniques
JP4635410B2 (ja) * 2002-07-02 2011-02-23 ソニー株式会社 半導体装置及びその製造方法
JP2005086147A (ja) * 2003-09-11 2005-03-31 Sony Corp 金属単層膜形成方法、配線形成方法、及び、電界効果型トランジスタの製造方法
JP4774679B2 (ja) * 2004-03-31 2011-09-14 大日本印刷株式会社 有機半導体装置
KR20060116534A (ko) * 2005-05-10 2006-11-15 삼성에스디아이 주식회사 박막 트랜지스터, 그 제조 방법 및 이를 구비한 평판 표시장치
US7678463B2 (en) * 2005-12-20 2010-03-16 Northwestern University Intercalated superlattice compositions and related methods for modulating dielectric property
US7683323B2 (en) * 2007-03-20 2010-03-23 The Trustees Of Columbia University In The City Of New York Organic field effect transistor systems and methods
KR101379616B1 (ko) * 2007-07-31 2014-03-31 삼성전자주식회사 계면특성이 향상된 유기박막트랜지스터 및 그의 제조방법
GB2458454B (en) * 2008-03-14 2011-03-16 Cambridge Display Tech Ltd Electronic devices and methods of making the same using solution processing techniques
JP4844767B2 (ja) * 2008-10-03 2011-12-28 ソニー株式会社 薄膜トランジスタ、薄膜トランジスタの製造方法、および電子機器
US8623745B2 (en) * 2008-11-28 2014-01-07 Nissan Chemical Industries, Ltd. Composition for forming gate insulating film for thin-film transistor
US8686404B2 (en) * 2008-12-08 2014-04-01 The Trustees Of The University Of Pennsylvania Organic semiconductors capable of ambipolar transport

Also Published As

Publication number Publication date
US9112160B2 (en) 2015-08-18
WO2013038082A1 (fr) 2013-03-21
EP2756532A1 (fr) 2014-07-23
US20140183513A1 (en) 2014-07-03
FR2980041A1 (fr) 2013-03-15

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