GB201218356D0 - Ion sensitive field effect transistor - Google Patents

Ion sensitive field effect transistor

Info

Publication number
GB201218356D0
GB201218356D0 GB201218356A GB201218356A GB201218356D0 GB 201218356 D0 GB201218356 D0 GB 201218356D0 GB 201218356 A GB201218356 A GB 201218356A GB 201218356 A GB201218356 A GB 201218356A GB 201218356 D0 GB201218356 D0 GB 201218356D0
Authority
GB
United Kingdom
Prior art keywords
field effect
effect transistor
sensitive field
ion sensitive
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB201218356A
Other versions
GB2508582A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DNAE Group Holdings Ltd
Original Assignee
DNAE Group Holdings Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by DNAE Group Holdings Ltd filed Critical DNAE Group Holdings Ltd
Priority to GB201218356A priority Critical patent/GB2508582A/en
Publication of GB201218356D0 publication Critical patent/GB201218356D0/en
Priority to PCT/GB2013/052676 priority patent/WO2014057289A1/en
Publication of GB2508582A publication Critical patent/GB2508582A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing

Landscapes

  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Computer Hardware Design (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
GB201218356A 2012-10-12 2012-10-12 ISFET with Titanium Nitride layer Withdrawn GB2508582A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB201218356A GB2508582A (en) 2012-10-12 2012-10-12 ISFET with Titanium Nitride layer
PCT/GB2013/052676 WO2014057289A1 (en) 2012-10-12 2013-10-14 Ion-sensitive field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB201218356A GB2508582A (en) 2012-10-12 2012-10-12 ISFET with Titanium Nitride layer

Publications (2)

Publication Number Publication Date
GB201218356D0 true GB201218356D0 (en) 2012-11-28
GB2508582A GB2508582A (en) 2014-06-11

Family

ID=47324697

Family Applications (1)

Application Number Title Priority Date Filing Date
GB201218356A Withdrawn GB2508582A (en) 2012-10-12 2012-10-12 ISFET with Titanium Nitride layer

Country Status (2)

Country Link
GB (1) GB2508582A (en)
WO (1) WO2014057289A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10048220B2 (en) * 2015-10-08 2018-08-14 Taiwan Semiconductor Manufacturing Company Ltd. Biosensor field effect transistor having specific well structure and method of forming the same
US9988678B2 (en) 2015-10-26 2018-06-05 International Business Machines Corporation DNA sequencing detection field effect transistor
GB201608758D0 (en) 2016-05-18 2016-06-29 Dnae Group Holdings Ltd Improvements in or relating to packaging for integrated circuits
EP3811071A1 (en) * 2018-06-22 2021-04-28 Ecole Polytechnique Federale De Lausanne (Epfl) Field-effect transistor device or sensor for sensing ions, molecules or biomarkers in a fluid

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW586228B (en) * 2003-03-19 2004-05-01 Univ Chung Yuan Christian Method for fabricating a titanium nitride sensing membrane on an EGFET
TWI295729B (en) * 2005-11-01 2008-04-11 Univ Nat Yunlin Sci & Tech Preparation of a ph sensor, the prepared ph sensor, systems comprising the same, and measurement using the systems
WO2009017882A2 (en) * 2007-06-08 2009-02-05 Takulapalli Bharath R Nano structured field effect sensor and methods of forming and using same
US20100176463A1 (en) * 2007-07-19 2010-07-15 Renesas Technology Corp. Semiconductor device and manufacturing method of the same
US20090194416A1 (en) * 2008-01-31 2009-08-06 Chung Yuan Christian University Potentiometric biosensor for detection of creatinine and forming method thereof
US20110318820A1 (en) * 2010-06-29 2011-12-29 Life Technologies Corporation Immobilized Buffer Particles and Uses Thereof
TWI624665B (en) * 2010-06-30 2018-05-21 生命技術公司 Ion-sensing charge-accumulation circuits and methods
US9676621B2 (en) * 2011-02-18 2017-06-13 Uwm Research Foundation, Inc. Graphene-based field-effect transistor biosensors
WO2012152308A1 (en) * 2011-05-06 2012-11-15 X-Fab Semiconductor Foundries Ag Ion sensitive field effect transistor
US8821798B2 (en) * 2012-01-19 2014-09-02 Life Technologies Corporation Titanium nitride as sensing layer for microwell structure

Also Published As

Publication number Publication date
GB2508582A (en) 2014-06-11
WO2014057289A1 (en) 2014-04-17

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)