FR2979069B1 - Procede de polissage chimico-mecanique du tungstene - Google Patents
Procede de polissage chimico-mecanique du tungsteneInfo
- Publication number
- FR2979069B1 FR2979069B1 FR1257820A FR1257820A FR2979069B1 FR 2979069 B1 FR2979069 B1 FR 2979069B1 FR 1257820 A FR1257820 A FR 1257820A FR 1257820 A FR1257820 A FR 1257820A FR 2979069 B1 FR2979069 B1 FR 2979069B1
- Authority
- FR
- France
- Prior art keywords
- tungsten
- mechanical polishing
- chemical mechanical
- polishing
- chemical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title 1
- 238000005498 polishing Methods 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title 1
- 229910052721 tungsten Inorganic materials 0.000 title 1
- 239000010937 tungsten Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/209,749 US8865013B2 (en) | 2011-08-15 | 2011-08-15 | Method for chemical mechanical polishing tungsten |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2979069A1 FR2979069A1 (fr) | 2013-02-22 |
FR2979069B1 true FR2979069B1 (fr) | 2014-09-19 |
Family
ID=47625347
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1257820A Expired - Fee Related FR2979069B1 (fr) | 2011-08-15 | 2012-08-16 | Procede de polissage chimico-mecanique du tungstene |
Country Status (7)
Country | Link |
---|---|
US (1) | US8865013B2 (fr) |
JP (1) | JP6137793B2 (fr) |
KR (1) | KR101992132B1 (fr) |
CN (1) | CN103042464B (fr) |
DE (1) | DE102012015825A1 (fr) |
FR (1) | FR2979069B1 (fr) |
TW (1) | TWI550044B (fr) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9157012B2 (en) * | 2011-12-21 | 2015-10-13 | Basf Se | Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of borophosphosilicate glass (BPSG) material in the presence of a CMP composition comprising anionic phosphate or phosphonate |
CN103265893B (zh) * | 2013-06-04 | 2015-12-09 | 复旦大学 | 一种基于金属Mo的抛光工艺的抛光液、其制备方法及应用 |
US9303188B2 (en) * | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
US10124464B2 (en) | 2014-10-21 | 2018-11-13 | Cabot Microelectronics Corporation | Corrosion inhibitors and related compositions and methods |
US9944828B2 (en) | 2014-10-21 | 2018-04-17 | Cabot Microelectronics Corporation | Slurry for chemical mechanical polishing of cobalt |
US9688885B2 (en) | 2014-10-21 | 2017-06-27 | Cabot Microelectronics Corporation | Cobalt polishing accelerators |
CN107075310B (zh) * | 2014-10-21 | 2019-04-02 | 嘉柏微电子材料股份公司 | 钴凹陷控制剂 |
JP6538368B2 (ja) * | 2015-02-24 | 2019-07-03 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
US9803108B1 (en) * | 2016-10-19 | 2017-10-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous compositions of stabilized aminosilane group containing silica particles |
US10181408B2 (en) * | 2017-01-31 | 2019-01-15 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for tungsten using polyglycols and polyglycol derivatives |
WO2021210310A1 (fr) * | 2020-04-16 | 2021-10-21 | 富士フイルムエレクトロニクスマテリアルズ株式会社 | Liquide de traitement, procédé de polissage chimique/mécanique et procédé de traitement de substrat semi-conducteur |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10163142A (ja) * | 1996-12-02 | 1998-06-19 | Fujimi Inkooporeetetsudo:Kk | タングステンの研磨用組成物 |
US6083419A (en) | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
JP3805588B2 (ja) | 1999-12-27 | 2006-08-02 | 株式会社日立製作所 | 半導体装置の製造方法 |
US6409781B1 (en) | 2000-05-01 | 2002-06-25 | Advanced Technology Materials, Inc. | Polishing slurries for copper and associated materials |
US6569770B2 (en) | 2001-06-28 | 2003-05-27 | Chartered Semiconductor Manufacturing Ltd. | Method for improving oxide erosion of tungsten CMP operations |
FR2835844B1 (fr) * | 2002-02-13 | 2006-12-15 | Clariant | Procede de polissage mecano-chimique de substrats metalliques |
US6641630B1 (en) * | 2002-06-06 | 2003-11-04 | Cabot Microelectronics Corp. | CMP compositions containing iodine and an iodine vapor-trapping agent |
JP2006504270A (ja) | 2002-10-22 | 2006-02-02 | サイロクエスト インコーポレーテッド | 銅表面の化学的機械研磨用の腐食抑止研磨スラリー |
TWI347969B (en) * | 2003-09-30 | 2011-09-01 | Fujimi Inc | Polishing composition |
US20090215269A1 (en) * | 2005-06-06 | 2009-08-27 | Advanced Technology Materials Inc. | Integrated chemical mechanical polishing composition and process for single platen processing |
US8512593B2 (en) * | 2005-11-04 | 2013-08-20 | Cheil Industries, Inc. | Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same |
US20080020680A1 (en) | 2006-07-24 | 2008-01-24 | Cabot Microelectronics Corporation | Rate-enhanced CMP compositions for dielectric films |
JP5322455B2 (ja) | 2007-02-26 | 2013-10-23 | 富士フイルム株式会社 | 研磨液及び研磨方法 |
JP2009081200A (ja) * | 2007-09-25 | 2009-04-16 | Fujifilm Corp | 研磨液 |
JP5314329B2 (ja) * | 2008-06-12 | 2013-10-16 | 富士フイルム株式会社 | 研磨液 |
US8506831B2 (en) | 2008-12-23 | 2013-08-13 | Air Products And Chemicals, Inc. | Combination, method, and composition for chemical mechanical planarization of a tungsten-containing substrate |
US8119529B2 (en) * | 2009-04-29 | 2012-02-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for chemical mechanical polishing a substrate |
US8025813B2 (en) * | 2009-11-12 | 2011-09-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and methods relating thereto |
US8232208B2 (en) * | 2010-06-15 | 2012-07-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stabilized chemical mechanical polishing composition and method of polishing a substrate |
US8568610B2 (en) * | 2010-09-20 | 2013-10-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate |
-
2011
- 2011-08-15 US US13/209,749 patent/US8865013B2/en active Active
-
2012
- 2012-08-03 JP JP2012173339A patent/JP6137793B2/ja active Active
- 2012-08-07 TW TW101128396A patent/TWI550044B/zh active
- 2012-08-09 DE DE102012015825A patent/DE102012015825A1/de not_active Withdrawn
- 2012-08-14 CN CN201210289371.7A patent/CN103042464B/zh active Active
- 2012-08-14 KR KR1020120089111A patent/KR101992132B1/ko active IP Right Grant
- 2012-08-16 FR FR1257820A patent/FR2979069B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR101992132B1 (ko) | 2019-09-30 |
TW201313851A (zh) | 2013-04-01 |
DE102012015825A1 (de) | 2013-02-21 |
CN103042464B (zh) | 2015-07-01 |
FR2979069A1 (fr) | 2013-02-22 |
US8865013B2 (en) | 2014-10-21 |
CN103042464A (zh) | 2013-04-17 |
KR20130020587A (ko) | 2013-02-27 |
JP2013042131A (ja) | 2013-02-28 |
US20130045598A1 (en) | 2013-02-21 |
TWI550044B (zh) | 2016-09-21 |
JP6137793B2 (ja) | 2017-05-31 |
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Legal Events
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ST | Notification of lapse |
Effective date: 20240405 |