FR2976711B1 - Cellule memoire avec memorisation volatile et non volatile - Google Patents

Cellule memoire avec memorisation volatile et non volatile

Info

Publication number
FR2976711B1
FR2976711B1 FR1155191A FR1155191A FR2976711B1 FR 2976711 B1 FR2976711 B1 FR 2976711B1 FR 1155191 A FR1155191 A FR 1155191A FR 1155191 A FR1155191 A FR 1155191A FR 2976711 B1 FR2976711 B1 FR 2976711B1
Authority
FR
France
Prior art keywords
volatile
memory cell
memorization
vdd
gnd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1155191A
Other languages
English (en)
Other versions
FR2976711A1 (fr
Inventor
Yoann Guillemenet
Lionel Torres
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Universite Montpellier 2 Sciences et Techniques
Original Assignee
Centre National de la Recherche Scientifique CNRS
Universite Montpellier 2 Sciences et Techniques
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Universite Montpellier 2 Sciences et Techniques filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR1155191A priority Critical patent/FR2976711B1/fr
Priority to US14/126,051 priority patent/US9053782B2/en
Priority to EP12730845.0A priority patent/EP2721612B1/fr
Priority to PCT/EP2012/061267 priority patent/WO2012171988A1/fr
Publication of FR2976711A1 publication Critical patent/FR2976711A1/fr
Application granted granted Critical
Publication of FR2976711B1 publication Critical patent/FR2976711B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0028—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/0081—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a magnetic RAM [MRAM] element or ferromagnetic cell
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a resistive RAM element, i.e. programmable resistors, e.g. formed of phase change or chalcogenide material

Landscapes

  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
FR1155191A 2011-06-15 2011-06-15 Cellule memoire avec memorisation volatile et non volatile Expired - Fee Related FR2976711B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1155191A FR2976711B1 (fr) 2011-06-15 2011-06-15 Cellule memoire avec memorisation volatile et non volatile
US14/126,051 US9053782B2 (en) 2011-06-15 2012-06-14 Memory cell with volatile and non-volatile storage
EP12730845.0A EP2721612B1 (fr) 2011-06-15 2012-06-14 Cellule de mémoire comprenant une mémoire volatile et une mémoire non volatile
PCT/EP2012/061267 WO2012171988A1 (fr) 2011-06-15 2012-06-14 Cellule de mémoire comprenant une mémoire volatile et une mémoire non volatile

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1155191A FR2976711B1 (fr) 2011-06-15 2011-06-15 Cellule memoire avec memorisation volatile et non volatile

Publications (2)

Publication Number Publication Date
FR2976711A1 FR2976711A1 (fr) 2012-12-21
FR2976711B1 true FR2976711B1 (fr) 2014-01-31

Family

ID=46420089

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1155191A Expired - Fee Related FR2976711B1 (fr) 2011-06-15 2011-06-15 Cellule memoire avec memorisation volatile et non volatile

Country Status (4)

Country Link
US (1) US9053782B2 (fr)
EP (1) EP2721612B1 (fr)
FR (1) FR2976711B1 (fr)
WO (1) WO2012171988A1 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2970589B1 (fr) 2011-01-19 2013-02-15 Centre Nat Rech Scient Cellule mémoire volatile/non volatile
FR2990089B1 (fr) * 2012-04-27 2014-04-11 Commissariat Energie Atomique Dispositif logique reprogrammable resistant aux rayonnements.
FR3004577A1 (fr) 2013-04-15 2014-10-17 Commissariat Energie Atomique
FR3004576B1 (fr) 2013-04-15 2019-11-29 Commissariat A L'energie Atomique Et Aux Energies Alternatives Cellule memoire avec memorisation de donnees non volatile
FR3008219B1 (fr) 2013-07-05 2016-12-09 Commissariat Energie Atomique Dispositif a memoire non volatile
FR3047136B1 (fr) 2016-01-27 2018-02-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives Sauvegarde de donnees dans un circuit asynchrone
TWI686930B (zh) * 2017-04-11 2020-03-01 國立交通大學 非揮發性記憶體及其操作方法
EP3540738B1 (fr) * 2018-03-15 2020-12-30 Karlsruher Institut für Technologie Bascule bistable non volatile multi-bits
CN110544499B (zh) * 2018-05-28 2021-07-13 联华电子股份有限公司 静态随机存取存储器结构
US11182686B2 (en) * 2019-03-01 2021-11-23 Samsung Electronics Co., Ltd 4T4R ternary weight cell with high on/off ratio background

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US4006469A (en) 1975-12-16 1977-02-01 International Business Machines Corporation Data storage cell with transistors operating at different threshold voltages
DE19548053A1 (de) * 1995-12-21 1997-07-03 Siemens Ag Verfahren zum Betrieb einer SRAM MOS-Transistor Speicherzelle
US6172899B1 (en) 1998-05-08 2001-01-09 Micron Technology. Inc. Static-random-access-memory cell
JP3983969B2 (ja) 2000-03-08 2007-09-26 株式会社東芝 不揮発性半導体記憶装置
JP3834787B2 (ja) 2001-11-22 2006-10-18 インターナショナル・ビジネス・マシーンズ・コーポレーション 不揮発性ラッチ回路
US6687154B2 (en) 2002-02-25 2004-02-03 Aplus Flash Technology, Inc. Highly-integrated flash memory and mask ROM array architecture
CN100337333C (zh) * 2002-04-10 2007-09-12 松下电器产业株式会社 非易失性触发器
JP3875139B2 (ja) 2002-04-24 2007-01-31 Ｎｅｃエレクトロニクス株式会社 不揮発性半導体記憶装置、そのデータ書き込み制御方法およびプログラム
KR100479810B1 (ko) * 2002-12-30 2005-03-31 주식회사 하이닉스반도체 불휘발성 메모리 장치
US7335906B2 (en) 2003-04-03 2008-02-26 Kabushiki Kaisha Toshiba Phase change memory device
DE102005001667B4 (de) * 2005-01-13 2011-04-21 Qimonda Ag Nichtflüchtige Speicherzelle zum Speichern eines Datums in einer integrierten Schaltung
US7764081B1 (en) 2005-08-05 2010-07-27 Xilinx, Inc. Programmable logic device (PLD) with memory refresh based on single event upset (SEU) occurrence to maintain soft error immunity
US7599210B2 (en) * 2005-08-19 2009-10-06 Sony Corporation Nonvolatile memory cell, storage device and nonvolatile logic circuit
DE102005049232A1 (de) 2005-10-14 2007-04-26 Infineon Technologies Ag Integrierter Schaltkreis und Verfahren zum Betreiben eines integrierten Schaltkreises
JP5311784B2 (ja) 2006-10-11 2013-10-09 ルネサスエレクトロニクス株式会社 半導体装置
US7692954B2 (en) * 2007-03-12 2010-04-06 International Business Machines Corporation Apparatus and method for integrating nonvolatile memory capability within SRAM devices
WO2009031231A1 (fr) * 2007-09-07 2009-03-12 Renesas Technology Corp. Dispositif à semi-conducteur
US7791941B2 (en) * 2007-10-26 2010-09-07 Micron Technology, Inc. Non-volatile SRAM cell
WO2009072511A1 (fr) 2007-12-06 2009-06-11 Nec Corporation Circuit de verrouillage non volatil
US20090190409A1 (en) 2008-01-28 2009-07-30 Rok Dittrich Integrated Circuit, Cell Arrangement, Method for Operating an Integrated Circuit and for Operating a Cell Arrangement, Memory Module
US7760538B1 (en) * 2008-03-04 2010-07-20 Xilinx, Inc. Non-volatile SRAM cell
US7796417B1 (en) * 2008-04-14 2010-09-14 Altera Corporation Memory circuits having programmable non-volatile resistors
US20090268513A1 (en) 2008-04-29 2009-10-29 Luca De Ambroggi Memory device with different types of phase change memory
US7961502B2 (en) 2008-12-04 2011-06-14 Qualcomm Incorporated Non-volatile state retention latch
US8194438B2 (en) 2009-02-12 2012-06-05 Seagate Technology Llc nvSRAM having variable magnetic resistors
US8605490B2 (en) * 2009-10-12 2013-12-10 Micron Technology, Inc. Non-volatile SRAM cell that incorporates phase-change memory into a CMOS process
JP5359798B2 (ja) 2009-11-10 2013-12-04 ソニー株式会社 メモリデバイスおよびその読み出し方法
KR20110057601A (ko) 2009-11-24 2011-06-01 삼성전자주식회사 비휘발성 논리 회로, 상기 비휘발성 논리 회로를 포함하는 집적 회로 및 상기 집적 회로의 동작 방법
EP2534583A1 (fr) 2009-12-01 2012-12-19 Queen's University At Kingston Procédé et système pour architecture informatique reconfigurable au moment de l'exécution
FR2966636B1 (fr) 2010-10-26 2012-12-14 Centre Nat Rech Scient Element magnetique inscriptible
FR2970589B1 (fr) 2011-01-19 2013-02-15 Centre Nat Rech Scient Cellule mémoire volatile/non volatile
FR2976712B1 (fr) 2011-06-15 2014-01-31 Centre Nat Rech Scient Element de memoire non-volatile
TWI429062B (zh) * 2011-06-15 2014-03-01 Ind Tech Res Inst 非揮發性靜態隨機存取式記憶胞以及記憶體電路
US8773896B2 (en) 2012-05-18 2014-07-08 Alexander Mikhailovich Shukh Nonvolatile latch circuit

Also Published As

Publication number Publication date
FR2976711A1 (fr) 2012-12-21
US20140167816A1 (en) 2014-06-19
EP2721612A1 (fr) 2014-04-23
WO2012171988A1 (fr) 2012-12-20
EP2721612B1 (fr) 2018-07-04
US9053782B2 (en) 2015-06-09

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