FR2935713B1 - Procede de reparation de couches barrieres a la diffusion du cuivre sur substrat solide semi-conducteur ; kit de reparation pour la mise en oeuvre de ce procede - Google Patents

Procede de reparation de couches barrieres a la diffusion du cuivre sur substrat solide semi-conducteur ; kit de reparation pour la mise en oeuvre de ce procede

Info

Publication number
FR2935713B1
FR2935713B1 FR0856012A FR0856012A FR2935713B1 FR 2935713 B1 FR2935713 B1 FR 2935713B1 FR 0856012 A FR0856012 A FR 0856012A FR 0856012 A FR0856012 A FR 0856012A FR 2935713 B1 FR2935713 B1 FR 2935713B1
Authority
FR
France
Prior art keywords
carrying
barrier layers
solid substrate
copper diffusion
repair kit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0856012A
Other languages
English (en)
Other versions
FR2935713A1 (fr
Inventor
Vincent Mevellec
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alchimer SA
Original Assignee
Alchimer SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0856012A priority Critical patent/FR2935713B1/fr
Application filed by Alchimer SA filed Critical Alchimer SA
Priority to US13/003,451 priority patent/US8524512B2/en
Priority to PCT/EP2009/061527 priority patent/WO2010026243A1/fr
Priority to KR1020117002955A priority patent/KR20110056485A/ko
Priority to CA2732661A priority patent/CA2732661A1/fr
Priority to TW098130255A priority patent/TW201021113A/zh
Publication of FR2935713A1 publication Critical patent/FR2935713A1/fr
Application granted granted Critical
Publication of FR2935713B1 publication Critical patent/FR2935713B1/fr
Priority to IL210644A priority patent/IL210644A0/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • C23C18/1886—Multistep pretreatment
    • C23C18/1893—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846—Layer combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76868—Forming or treating discontinuous thin films, e.g. repair, enhancement or reinforcement of discontinuous thin films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
FR0856012A 2008-09-08 2008-09-08 Procede de reparation de couches barrieres a la diffusion du cuivre sur substrat solide semi-conducteur ; kit de reparation pour la mise en oeuvre de ce procede Expired - Fee Related FR2935713B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR0856012A FR2935713B1 (fr) 2008-09-08 2008-09-08 Procede de reparation de couches barrieres a la diffusion du cuivre sur substrat solide semi-conducteur ; kit de reparation pour la mise en oeuvre de ce procede
PCT/EP2009/061527 WO2010026243A1 (fr) 2008-09-08 2009-09-07 Procédé de réparation de couches de barrière de diffusion du cuivre sur un substrat solide semi-conducteur et nécessaire de réparation pour mettre en œuvre ce procédé
KR1020117002955A KR20110056485A (ko) 2008-09-08 2009-09-07 반도체 고형 기판 상에 구리확산 배리어 층을 수선하는 방법 및 이 방법을 실행하기 위한 수선 키트
CA2732661A CA2732661A1 (fr) 2008-09-08 2009-09-07 Procede de reparation de couches de barriere de diffusion du cuivre sur un substrat solide semi-conducteur et necessaire de reparation pour mettre en oeuvre ce procede
US13/003,451 US8524512B2 (en) 2008-09-08 2009-09-07 Method for repairing copper diffusion barrier layers on a semiconductor solid substrate and repair kit for implementing this method
TW098130255A TW201021113A (en) 2008-09-08 2009-09-08 Method for repairing copper diffusion barrier layers on a semiconductor solid substrate and repair kit for implementing this method
IL210644A IL210644A0 (en) 2008-09-08 2011-01-13 Method for repairing copper diffusion barrier layers on a semiconductor solid substrate and repair kit for implementing this method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0856012A FR2935713B1 (fr) 2008-09-08 2008-09-08 Procede de reparation de couches barrieres a la diffusion du cuivre sur substrat solide semi-conducteur ; kit de reparation pour la mise en oeuvre de ce procede

Publications (2)

Publication Number Publication Date
FR2935713A1 FR2935713A1 (fr) 2010-03-12
FR2935713B1 true FR2935713B1 (fr) 2010-12-10

Family

ID=40551878

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0856012A Expired - Fee Related FR2935713B1 (fr) 2008-09-08 2008-09-08 Procede de reparation de couches barrieres a la diffusion du cuivre sur substrat solide semi-conducteur ; kit de reparation pour la mise en oeuvre de ce procede

Country Status (7)

Country Link
US (1) US8524512B2 (fr)
KR (1) KR20110056485A (fr)
CA (1) CA2732661A1 (fr)
FR (1) FR2935713B1 (fr)
IL (1) IL210644A0 (fr)
TW (1) TW201021113A (fr)
WO (1) WO2010026243A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2935713B1 (fr) * 2008-09-08 2010-12-10 Alchimer Procede de reparation de couches barrieres a la diffusion du cuivre sur substrat solide semi-conducteur ; kit de reparation pour la mise en oeuvre de ce procede
FR2974818B1 (fr) * 2011-05-05 2013-05-24 Alchimer Procede de depot de couches metalliques a base de nickel ou de cobalt sur un substrat solide semi-conducteur ; kit pour la mise en oeuvre de ce procede
US8981564B2 (en) 2013-05-20 2015-03-17 Invensas Corporation Metal PVD-free conducting structures
CN110512198A (zh) * 2019-09-24 2019-11-29 苏州天承化工有限公司 一种化学镀铜液、化学镀铜膜及其制备方法
KR102485602B1 (ko) * 2020-09-18 2023-01-06 공주대학교 산학협력단 TBAB(tert-butylamine borane, 3차 부틸아민보란)를 포함한, 리튬 이온 전지의 전극 단자 도금용 니켈-보론 무전해 도금액, 이를 이용한 니켈-보론 무전해 도금 방법, 및 이를 이용하여 제조된 니켈-보론 무전해 도금층이 형성된 리튬 이온 전지의 전극 단자
EP4364193A1 (fr) * 2021-07-02 2024-05-08 Coreshell Technologies, Inc. Couches de germe nanostructurées pour dépôt de lithium métallique

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Publication number Priority date Publication date Assignee Title
US3958048A (en) * 1974-04-22 1976-05-18 Crown City Plating Company Aqueous suspensions for surface activation of nonconductors for electroless plating
EP0079975B1 (fr) * 1981-11-20 1989-05-10 LeaRonal, Inc. Colloide de cuivre et procédé pour l'activation des surfaces isolantes pour la galvanisation suivante
DE4241045C1 (de) 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
US6136693A (en) * 1997-10-27 2000-10-24 Chartered Semiconductor Manufacturing Ltd. Method for planarized interconnect vias using electroless plating and CMP
KR100425458B1 (ko) * 2001-08-21 2004-03-30 삼성전자주식회사 무전해 도금을 이용한 금속 배선 형성 방법
US6645832B2 (en) 2002-02-20 2003-11-11 Intel Corporation Etch stop layer for silicon (Si) via etch in three-dimensional (3-D) wafer-to-wafer vertical stack
JP2004346422A (ja) * 2003-05-23 2004-12-09 Rohm & Haas Electronic Materials Llc めっき方法
US7060624B2 (en) 2003-08-13 2006-06-13 International Business Machines Corporation Deep filled vias
US7101792B2 (en) 2003-10-09 2006-09-05 Micron Technology, Inc. Methods of plating via interconnects
US7309658B2 (en) * 2004-11-22 2007-12-18 Intermolecular, Inc. Molecular self-assembly in substrate processing
US7695981B2 (en) * 2005-05-13 2010-04-13 Siluria Technologies, Inc. Seed layers, cap layers, and thin films and methods of making thereof
US7625814B2 (en) * 2006-03-29 2009-12-01 Asm Nutool, Inc. Filling deep features with conductors in semiconductor manufacturing
US7994640B1 (en) * 2007-07-02 2011-08-09 Novellus Systems, Inc. Nanoparticle cap layer
FR2935713B1 (fr) * 2008-09-08 2010-12-10 Alchimer Procede de reparation de couches barrieres a la diffusion du cuivre sur substrat solide semi-conducteur ; kit de reparation pour la mise en oeuvre de ce procede

Also Published As

Publication number Publication date
US20110294231A1 (en) 2011-12-01
KR20110056485A (ko) 2011-05-30
IL210644A0 (en) 2011-03-31
FR2935713A1 (fr) 2010-03-12
US8524512B2 (en) 2013-09-03
WO2010026243A1 (fr) 2010-03-11
CA2732661A1 (fr) 2010-03-11
TW201021113A (en) 2010-06-01

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Effective date: 20130531