FR2917896B1 - Transistor a effet de champ a contacts electriques alternes. - Google Patents

Transistor a effet de champ a contacts electriques alternes.

Info

Publication number
FR2917896B1
FR2917896B1 FR0755936A FR0755936A FR2917896B1 FR 2917896 B1 FR2917896 B1 FR 2917896B1 FR 0755936 A FR0755936 A FR 0755936A FR 0755936 A FR0755936 A FR 0755936A FR 2917896 B1 FR2917896 B1 FR 2917896B1
Authority
FR
France
Prior art keywords
field effect
effect transistor
electrical contacts
alternate electrical
alternate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0755936A
Other languages
English (en)
Other versions
FR2917896A1 (fr
Inventor
Frederic Mayer
Laurent Clavelier
Thierry Poiroux
Gerard Billiot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0755936A priority Critical patent/FR2917896B1/fr
Priority to PCT/EP2008/057773 priority patent/WO2008155379A2/fr
Priority to US12/665,463 priority patent/US8866225B2/en
Publication of FR2917896A1 publication Critical patent/FR2917896A1/fr
Application granted granted Critical
Publication of FR2917896B1 publication Critical patent/FR2917896B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/7855—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with at least two independent gates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41791—Source or drain electrodes for field effect devices for transistors with a horizontal current flow in a vertical sidewall, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
FR0755936A 2007-06-21 2007-06-21 Transistor a effet de champ a contacts electriques alternes. Expired - Fee Related FR2917896B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR0755936A FR2917896B1 (fr) 2007-06-21 2007-06-21 Transistor a effet de champ a contacts electriques alternes.
PCT/EP2008/057773 WO2008155379A2 (fr) 2007-06-21 2008-06-19 Transistor a effet de champ a contacts electriques alternes
US12/665,463 US8866225B2 (en) 2007-06-21 2008-06-19 Field effect transistor with alternate electrical contacts

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0755936A FR2917896B1 (fr) 2007-06-21 2007-06-21 Transistor a effet de champ a contacts electriques alternes.

Publications (2)

Publication Number Publication Date
FR2917896A1 FR2917896A1 (fr) 2008-12-26
FR2917896B1 true FR2917896B1 (fr) 2009-11-06

Family

ID=39052755

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0755936A Expired - Fee Related FR2917896B1 (fr) 2007-06-21 2007-06-21 Transistor a effet de champ a contacts electriques alternes.

Country Status (3)

Country Link
US (1) US8866225B2 (fr)
FR (1) FR2917896B1 (fr)
WO (1) WO2008155379A2 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8969154B2 (en) 2011-08-23 2015-03-03 Micron Technology, Inc. Methods for fabricating semiconductor device structures and arrays of vertical transistor devices
US9293584B2 (en) * 2011-11-02 2016-03-22 Broadcom Corporation FinFET devices
US20140106529A1 (en) * 2012-10-16 2014-04-17 Stmicroelectronics (Crolles 2) Sas Finfet device with silicided source-drain regions and method of making same using a two step anneal
US9136343B2 (en) * 2013-01-24 2015-09-15 Intel Corporation Deep gate-all-around semiconductor device having germanium or group III-V active layer
KR102255174B1 (ko) 2014-10-10 2021-05-24 삼성전자주식회사 활성 영역을 갖는 반도체 소자 및 그 형성 방법
US9627411B2 (en) * 2015-06-05 2017-04-18 Taiwan Semiconductor Manufacturing Company, Ltd. Three-dimensional transistor and methods of manufacturing thereof
KR102323943B1 (ko) 2015-10-21 2021-11-08 삼성전자주식회사 반도체 장치 제조 방법
US9954050B1 (en) 2016-10-24 2018-04-24 International Business Machines Corporation Precise/designable FinFET resistor structure
CN110416296B (zh) * 2018-04-26 2021-03-26 苏州能讯高能半导体有限公司 半导体器件、半导体芯片及半导体器件制作方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5260233A (en) * 1992-11-06 1993-11-09 International Business Machines Corporation Semiconductor device and wafer structure having a planar buried interconnect by wafer bonding
US6759282B2 (en) * 2001-06-12 2004-07-06 International Business Machines Corporation Method and structure for buried circuits and devices
US7163851B2 (en) * 2002-08-26 2007-01-16 International Business Machines Corporation Concurrent Fin-FET and thick-body device fabrication
FR2845522A1 (fr) * 2002-10-03 2004-04-09 St Microelectronics Sa Circuit integre a couche enterree fortement conductrice
US6765303B1 (en) * 2003-05-06 2004-07-20 Advanced Micro Devices, Inc. FinFET-based SRAM cell
EP1503411A1 (fr) * 2003-07-30 2005-02-02 St Microelectronics S.A. Lignes conductrices enterrées dans des zones d'isolement
US6888199B2 (en) * 2003-10-07 2005-05-03 International Business Machines Corporation High-density split-gate FinFET
US7365398B2 (en) * 2004-02-11 2008-04-29 Cornell Research Foundation, Inc. Compact SRAMs and other multiple transistor structures
KR100941405B1 (ko) * 2005-02-18 2010-02-10 후지쯔 마이크로일렉트로닉스 가부시키가이샤 기억 소자 매트릭스 및 그 기억 소자 매트릭스를 이용한 반도체 회로 장치
US7102181B1 (en) * 2005-04-22 2006-09-05 International Business Machines Corporation Structure and method for dual-gate FET with SOI substrate
US7087966B1 (en) * 2005-05-18 2006-08-08 International Business Machines Corporation Double-Gate FETs (field effect transistors)
JP4762060B2 (ja) * 2006-06-13 2011-08-31 株式会社東芝 半導体記憶装置およびその製造方法
JP2008010503A (ja) * 2006-06-27 2008-01-17 Toshiba Corp 半導体記憶装置およびその製造方法
FR2910704A1 (fr) 2007-04-05 2008-06-27 Commissariat Energie Atomique Procede de realisation d'un dispositif a circuit integre interconnecte

Also Published As

Publication number Publication date
US20100155843A1 (en) 2010-06-24
WO2008155379A3 (fr) 2009-04-09
FR2917896A1 (fr) 2008-12-26
US8866225B2 (en) 2014-10-21
WO2008155379A2 (fr) 2008-12-24

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