FR2908919B1 - Circuit et procede pour produire une tension de reference dans des dispositifs memoire comportant une matrice de cellules non volatiles. - Google Patents

Circuit et procede pour produire une tension de reference dans des dispositifs memoire comportant une matrice de cellules non volatiles.

Info

Publication number
FR2908919B1
FR2908919B1 FR0759104A FR0759104A FR2908919B1 FR 2908919 B1 FR2908919 B1 FR 2908919B1 FR 0759104 A FR0759104 A FR 0759104A FR 0759104 A FR0759104 A FR 0759104A FR 2908919 B1 FR2908919 B1 FR 2908919B1
Authority
FR
France
Prior art keywords
circuit
reference voltage
memory devices
cell matrix
generating reference
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0759104A
Other languages
English (en)
Other versions
FR2908919A1 (fr
Inventor
Antonio Conte
Mario Micciche
Giudice Gianbattista Lo
Martino Alberto Di
Giampiero Sberno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Publication of FR2908919A1 publication Critical patent/FR2908919A1/fr
Application granted granted Critical
Publication of FR2908919B1 publication Critical patent/FR2908919B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
FR0759104A 2006-11-17 2007-11-16 Circuit et procede pour produire une tension de reference dans des dispositifs memoire comportant une matrice de cellules non volatiles. Expired - Fee Related FR2908919B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT002211A ITMI20062211A1 (it) 2006-11-17 2006-11-17 Circuito e metodo per generare una tensione di riferimento in dispositivi di memoria a matrice di celle non volatili

Publications (2)

Publication Number Publication Date
FR2908919A1 FR2908919A1 (fr) 2008-05-23
FR2908919B1 true FR2908919B1 (fr) 2014-03-07

Family

ID=39357724

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0759104A Expired - Fee Related FR2908919B1 (fr) 2006-11-17 2007-11-16 Circuit et procede pour produire une tension de reference dans des dispositifs memoire comportant une matrice de cellules non volatiles.

Country Status (3)

Country Link
US (1) US7633805B2 (fr)
FR (1) FR2908919B1 (fr)
IT (1) ITMI20062211A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5569711B2 (ja) * 2009-03-01 2014-08-13 国立大学法人浜松医科大学 手術支援システム

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5828601A (en) * 1993-12-01 1998-10-27 Advanced Micro Devices, Inc. Programmed reference
JP3199989B2 (ja) * 1994-09-30 2001-08-20 株式会社東芝 不揮発性半導体記憶装置とその過書込み救済方法
US5835420A (en) * 1997-06-27 1998-11-10 Aplus Flash Technology, Inc. Node-precise voltage regulation for a MOS memory system
EP0913835B1 (fr) * 1997-10-28 2007-03-21 STMicroelectronics S.r.l. Procédé pour la programmation parallèle de dispositifs de mémoire rémanante, en particulier mémoires flash et EEPROMs
FR2778012B1 (fr) * 1998-04-28 2001-09-28 Sgs Thomson Microelectronics Dispositif et procede de lecture de cellules de memoire eeprom
US6219290B1 (en) * 1998-10-14 2001-04-17 Macronix International Co., Ltd. Memory cell sense amplifier
EP1028433B1 (fr) * 1999-02-10 2004-04-28 SGS-THOMSON MICROELECTRONICS s.r.l. Mémoire multiniveau non-volatile et méthode pour lire celle-ci
ITMI20011311A1 (it) * 2001-06-21 2002-12-21 St Microelectronics Srl Memoria con sistema di lettura differenziale perfezionato
US6621742B1 (en) * 2002-04-29 2003-09-16 Fujitsu Limited System for programming a flash memory device
ITTO20030121A1 (it) * 2003-02-18 2004-08-19 St Microelectronics Srl Amplificatore di lettura di celle di memoria non volatili a
DE602004003465D1 (de) * 2004-02-19 2007-01-11 St Microelectronics Sa Abfühlschaltung mit regulierter Referenzspannung
WO2006082619A1 (fr) * 2005-01-31 2006-08-10 Spansion Llc Appareil de stockage et procédé de régulation de cellules de références de cet appareil de stockage

Also Published As

Publication number Publication date
ITMI20062211A1 (it) 2008-05-18
US20080130361A1 (en) 2008-06-05
US7633805B2 (en) 2009-12-15
FR2908919A1 (fr) 2008-05-23

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