FR2887866B1 - NANOSTRUCTURES WITH DIFFERENTIAL NEGATIVE RESISTANCE AND METHOD OF MANUFACTURING THESE NANOSTRUCTURES - Google Patents
NANOSTRUCTURES WITH DIFFERENTIAL NEGATIVE RESISTANCE AND METHOD OF MANUFACTURING THESE NANOSTRUCTURESInfo
- Publication number
- FR2887866B1 FR2887866B1 FR0551848A FR0551848A FR2887866B1 FR 2887866 B1 FR2887866 B1 FR 2887866B1 FR 0551848 A FR0551848 A FR 0551848A FR 0551848 A FR0551848 A FR 0551848A FR 2887866 B1 FR2887866 B1 FR 2887866B1
- Authority
- FR
- France
- Prior art keywords
- nanostructures
- manufacturing
- negative resistance
- differential negative
- differential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002086 nanomaterial Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66151—Tunnel diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/88—Tunnel-effect diodes
- H01L29/885—Esaki diodes
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0551848A FR2887866B1 (en) | 2005-06-30 | 2005-06-30 | NANOSTRUCTURES WITH DIFFERENTIAL NEGATIVE RESISTANCE AND METHOD OF MANUFACTURING THESE NANOSTRUCTURES |
PCT/EP2006/063692 WO2007003576A1 (en) | 2005-06-30 | 2006-06-29 | Nanostructures with negative differential resistance and method for making same |
EP06777518A EP1897145A1 (en) | 2005-06-30 | 2006-06-29 | Nanostructures with negative differential resistance and method for making same |
US11/922,970 US20100072472A1 (en) | 2005-06-30 | 2006-06-29 | Nanostructures With 0, 1, 2, and 3 Dimensions, With Negative Differential Resistance and Method for Making These Nanostructures |
JP2008518850A JP2009500815A (en) | 2005-06-30 | 2006-06-29 | 0, 1, 2, and 3D nanostructures having negative differential resistance and methods for making same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0551848A FR2887866B1 (en) | 2005-06-30 | 2005-06-30 | NANOSTRUCTURES WITH DIFFERENTIAL NEGATIVE RESISTANCE AND METHOD OF MANUFACTURING THESE NANOSTRUCTURES |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2887866A1 FR2887866A1 (en) | 2007-01-05 |
FR2887866B1 true FR2887866B1 (en) | 2007-08-17 |
Family
ID=35708938
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0551848A Expired - Fee Related FR2887866B1 (en) | 2005-06-30 | 2005-06-30 | NANOSTRUCTURES WITH DIFFERENTIAL NEGATIVE RESISTANCE AND METHOD OF MANUFACTURING THESE NANOSTRUCTURES |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2887866B1 (en) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2757183B1 (en) * | 1996-12-16 | 1999-02-05 | Commissariat Energie Atomique | LONG LENGTH AND LONG STABILITY ATOMIC WIRES, PROCESS FOR PRODUCING THESE WIRES, APPLICATION IN NANO-ELECTRONICS |
FR2823739B1 (en) * | 2001-04-19 | 2003-05-16 | Commissariat Energie Atomique | PROCESS FOR MANUFACTURING UNIDIMENSIONAL NANOSTRUCTURES AND NANOSTRUCTURES OBTAINED THEREBY |
-
2005
- 2005-06-30 FR FR0551848A patent/FR2887866B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2887866A1 (en) | 2007-01-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20120229 |