FR2885422B1 - LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - Google Patents

LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME

Info

Publication number
FR2885422B1
FR2885422B1 FR0512149A FR0512149A FR2885422B1 FR 2885422 B1 FR2885422 B1 FR 2885422B1 FR 0512149 A FR0512149 A FR 0512149A FR 0512149 A FR0512149 A FR 0512149A FR 2885422 B1 FR2885422 B1 FR 2885422B1
Authority
FR
France
Prior art keywords
thin film
film transistor
gate
same
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0512149A
Other languages
French (fr)
Other versions
FR2885422A1 (en
Inventor
Gee Sung Chae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Display Co Ltd
Original Assignee
LG Philips LCD Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Philips LCD Co Ltd filed Critical LG Philips LCD Co Ltd
Publication of FR2885422A1 publication Critical patent/FR2885422A1/en
Application granted granted Critical
Publication of FR2885422B1 publication Critical patent/FR2885422B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line

Abstract

An LCD device and a method for fabricating the same is disclosed that improves a yield by decreasing processing time. The LCD device includes gate and data lines formed substantially perpendicular to each other on a substrate and defining a unit pixel region; a thin film transistor formed at a crossing of the gate and data lines; an active layer formed over the gate line, the data line, and the thin film transistor; an organic resin formed on a portion of a gate insulating layer not including the gate line, the data line, and the thin film transistor; a passivation layer formed on an entire surface of the substrate including the thin film transistor; and a pixel electrode, formed in the unit pixel region, the pixel electrode being connected with a drain electrode of the thin film transistor.
FR0512149A 2005-05-06 2005-11-30 LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME Active FR2885422B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050037874A KR101201304B1 (en) 2005-05-06 2005-05-06 Liquid Crystal Display Device and method for fabricating the same

Publications (2)

Publication Number Publication Date
FR2885422A1 FR2885422A1 (en) 2006-11-10
FR2885422B1 true FR2885422B1 (en) 2013-07-26

Family

ID=37137374

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0512149A Active FR2885422B1 (en) 2005-05-06 2005-11-30 LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME

Country Status (4)

Country Link
US (2) US7817218B2 (en)
KR (1) KR101201304B1 (en)
CN (1) CN100409091C (en)
FR (1) FR2885422B1 (en)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007024678A1 (en) 2007-05-25 2008-11-27 Bundesdruckerei Gmbh Value or security document, method for reproducing a picture sequence and computer program product
DE102007050480B4 (en) 2007-10-19 2019-03-21 Bundesdruckerei Gmbh ID document with a display device, system with an ID document and method for reading an ID document
DE102007000874A1 (en) 2007-11-12 2009-05-14 Bundesdruckerei Gmbh Document with an integrated display device
DE102007000873A1 (en) 2007-11-12 2009-06-04 Bundesdruckerei Gmbh Document with an integrated display device
DE102007000889B8 (en) 2007-11-12 2010-04-08 Bundesdruckerei Gmbh Document with an integrated display device
DE102007000885A1 (en) 2007-11-12 2009-05-14 Bundesdruckerei Gmbh Document with an integrated display device
DE102007000880A1 (en) 2007-11-12 2009-05-14 Bundesdruckerei Gmbh Document with an integrated display device
DE102007000879B4 (en) 2007-11-12 2013-05-08 Bundesdruckerei Gmbh Document with an integrated display device
DE102007000875A1 (en) 2007-11-12 2009-05-14 Bundesdruckerei Gmbh Document with an integrated display device
DE102007000883A1 (en) 2007-11-12 2009-05-14 Bundesdruckerei Gmbh Document with an integrated display device
DE102007000881A1 (en) 2007-11-12 2009-05-14 Bundesdruckerei Gmbh Document with an integrated display device, method for producing a document and a reader
DE102007000890B4 (en) 2007-11-12 2014-06-05 Bundesdruckerei Gmbh Document with an integrated display device
DE102007000887A1 (en) 2007-11-12 2009-05-14 Bundesdruckerei Gmbh Document with an integrated display device
DE102007000888A1 (en) 2007-11-12 2009-05-14 Bundesdruckerei Gmbh Document with an integrated display device
DE102008000011A1 (en) 2008-01-08 2009-07-09 Bundesdruckerei Gmbh Document with a display device and method for selecting a secret identifier
DE102008001149A1 (en) 2008-04-14 2009-10-15 Bundesdruckerei Gmbh Document with a memory and receiver device
DE102008001148A1 (en) 2008-04-14 2009-10-15 Bundesdruckerei Gmbh Document with a built-in display and receiver device
KR101243822B1 (en) * 2008-05-27 2013-03-18 엘지디스플레이 주식회사 Liquid Crystal Display Device
KR101106562B1 (en) * 2009-07-24 2012-01-20 엘지디스플레이 주식회사 Array substrate and method of fabricating the same
DE102010002462B4 (en) 2010-03-01 2018-08-02 Bundesdruckerei Gmbh Camera system for taking pictures and storing pictures in a document
TWI459563B (en) * 2011-04-01 2014-11-01 Chunghwa Picture Tubes Ltd Transistor array substrate
CN102629606B (en) * 2011-09-26 2015-02-04 北京京东方光电科技有限公司 Array substrate and preparation method thereof and display device
KR20130049620A (en) * 2011-11-04 2013-05-14 삼성디스플레이 주식회사 Display device
KR101482551B1 (en) * 2014-06-23 2015-01-19 엘지디스플레이 주식회사 Array Substrate of Organic Thin Film Transistor Liquid Crystal Display Device and Method of Fabricating the same
CN108682692A (en) 2018-05-18 2018-10-19 京东方科技集团股份有限公司 Thin film transistor and its manufacturing method, array substrate, display device
CN111682033A (en) * 2020-07-07 2020-09-18 深圳市华星光电半导体显示技术有限公司 Display panel and manufacturing method thereof

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2655941B2 (en) * 1991-01-30 1997-09-24 シャープ株式会社 Active matrix type liquid crystal display device and manufacturing method thereof
JP3172840B2 (en) * 1992-01-28 2001-06-04 株式会社日立製作所 Active matrix substrate manufacturing method and liquid crystal display device
JP3458562B2 (en) * 1995-10-12 2003-10-20 株式会社日立製作所 Liquid crystal display device and manufacturing method thereof
JP4085438B2 (en) * 1996-10-17 2008-05-14 松下電器産業株式会社 Organic thin film transistor, liquid crystal device and organic light emitting device
JP2000269504A (en) 1999-03-16 2000-09-29 Hitachi Ltd Semiconductor device, its manufacture and liquid crystal display device
US6678018B2 (en) * 2000-02-10 2004-01-13 Samsung Electronics Co., Ltd. Thin film transistor array substrate for a liquid crystal display and the method for fabricating the same
KR100776509B1 (en) * 2000-12-30 2007-11-16 엘지.필립스 엘시디 주식회사 Liquid Crystal Display Device and Fabricating Method Thereof
KR100413668B1 (en) * 2001-03-29 2003-12-31 엘지.필립스 엘시디 주식회사 A method for fabricating array substrate for liquid crystal display device
KR100493435B1 (en) * 2001-12-20 2005-06-07 엘지.필립스 엘시디 주식회사 Liquid Crystal Display Device And Fabricating Method Thereof
TW584756B (en) * 2002-05-30 2004-04-21 Au Optronics Corp Manufacturing method for TFT array substrate of reflective LCD
KR100865257B1 (en) * 2002-09-16 2008-10-24 엘지디스플레이 주식회사 Method of manufacturing Thin Film Transistor for Liquid Crystal Display Device
US20040183070A1 (en) * 2003-03-21 2004-09-23 International Business Machines Corporation Solution processed pentacene-acceptor heterojunctions in diodes, photodiodes, and photovoltaic cells and method of making same
KR100652052B1 (en) * 2003-05-23 2006-11-30 엘지.필립스 엘시디 주식회사 method for manufacturing of thin film transistor array panel liquid crystal display
US7659138B2 (en) * 2003-12-26 2010-02-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing an organic semiconductor element
KR100669764B1 (en) * 2004-11-16 2007-01-16 삼성에스디아이 주식회사 A method for preparing a thin film transistor, the thin film transistor and a flat diplay device comprising the same

Also Published As

Publication number Publication date
US20100327272A1 (en) 2010-12-30
CN100409091C (en) 2008-08-06
CN1858639A (en) 2006-11-08
US20060250535A1 (en) 2006-11-09
FR2885422A1 (en) 2006-11-10
US7817218B2 (en) 2010-10-19
KR101201304B1 (en) 2012-11-14
KR20060115464A (en) 2006-11-09
US8199271B2 (en) 2012-06-12

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