FR2885261B1 - Element integre de memoire dynamique a acces aleatoire - Google Patents
Element integre de memoire dynamique a acces aleatoireInfo
- Publication number
- FR2885261B1 FR2885261B1 FR0504317A FR0504317A FR2885261B1 FR 2885261 B1 FR2885261 B1 FR 2885261B1 FR 0504317 A FR0504317 A FR 0504317A FR 0504317 A FR0504317 A FR 0504317A FR 2885261 B1 FR2885261 B1 FR 2885261B1
- Authority
- FR
- France
- Prior art keywords
- random access
- memory element
- dynamic memory
- integrated dynamic
- integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0504317A FR2885261B1 (fr) | 2005-04-28 | 2005-04-28 | Element integre de memoire dynamique a acces aleatoire |
US11/398,855 US20060261390A1 (en) | 2005-04-28 | 2006-04-06 | Dynamic random access memory integrated element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0504317A FR2885261B1 (fr) | 2005-04-28 | 2005-04-28 | Element integre de memoire dynamique a acces aleatoire |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2885261A1 FR2885261A1 (fr) | 2006-11-03 |
FR2885261B1 true FR2885261B1 (fr) | 2007-07-13 |
Family
ID=35432176
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0504317A Expired - Fee Related FR2885261B1 (fr) | 2005-04-28 | 2005-04-28 | Element integre de memoire dynamique a acces aleatoire |
Country Status (2)
Country | Link |
---|---|
US (1) | US20060261390A1 (fr) |
FR (1) | FR2885261B1 (fr) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6252275B1 (en) * | 1999-01-07 | 2001-06-26 | International Business Machines Corporation | Silicon-on-insulator non-volatile random access memory device |
TWI230392B (en) * | 2001-06-18 | 2005-04-01 | Innovative Silicon Sa | Semiconductor device |
FR2826180B1 (fr) * | 2001-06-19 | 2003-09-19 | St Microelectronics Sa | Dispositif semiconducteur integre de memoire de type dram et procede de fabrication correspondant |
US6917078B2 (en) * | 2002-08-30 | 2005-07-12 | Micron Technology Inc. | One transistor SOI non-volatile random access memory cell |
KR100539276B1 (ko) * | 2003-04-02 | 2005-12-27 | 삼성전자주식회사 | 게이트 라인을 포함하는 반도체 장치 및 이의 제조 방법 |
-
2005
- 2005-04-28 FR FR0504317A patent/FR2885261B1/fr not_active Expired - Fee Related
-
2006
- 2006-04-06 US US11/398,855 patent/US20060261390A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20060261390A1 (en) | 2006-11-23 |
FR2885261A1 (fr) | 2006-11-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20091231 |