FR2874449B1 - Circuit de retard de programme auto-adaptatif pour memoires programmables - Google Patents

Circuit de retard de programme auto-adaptatif pour memoires programmables

Info

Publication number
FR2874449B1
FR2874449B1 FR0408930A FR0408930A FR2874449B1 FR 2874449 B1 FR2874449 B1 FR 2874449B1 FR 0408930 A FR0408930 A FR 0408930A FR 0408930 A FR0408930 A FR 0408930A FR 2874449 B1 FR2874449 B1 FR 2874449B1
Authority
FR
France
Prior art keywords
self
delay circuit
programmable memory
program delay
adaptive program
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0408930A
Other languages
English (en)
Other versions
FR2874449A1 (fr
Inventor
Marylene Combe
Jean Michel Daga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Atmel Corp
Original Assignee
Atmel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp filed Critical Atmel Corp
Priority to FR0408930A priority Critical patent/FR2874449B1/fr
Priority to US10/990,203 priority patent/US7151701B2/en
Priority to CN2005800353144A priority patent/CN101040344B/zh
Priority to EP05770835.6A priority patent/EP1782426B1/fr
Priority to PCT/US2005/024187 priority patent/WO2006023146A2/fr
Priority to TW094126701A priority patent/TWI396203B/zh
Publication of FR2874449A1 publication Critical patent/FR2874449A1/fr
Application granted granted Critical
Publication of FR2874449B1 publication Critical patent/FR2874449B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/14—Circuits or methods to write a page or sector of information simultaneously into a nonvolatile memory, typically a complete row or word line in flash memory
FR0408930A 2004-08-17 2004-08-17 Circuit de retard de programme auto-adaptatif pour memoires programmables Expired - Fee Related FR2874449B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR0408930A FR2874449B1 (fr) 2004-08-17 2004-08-17 Circuit de retard de programme auto-adaptatif pour memoires programmables
US10/990,203 US7151701B2 (en) 2004-08-17 2004-11-16 Self-adaptive program delay circuitry for programmable memories
CN2005800353144A CN101040344B (zh) 2004-08-17 2005-07-11 可编程存储器电路及改进其单元阵列中数据保持的方法
EP05770835.6A EP1782426B1 (fr) 2004-08-17 2005-07-11 Circuit a retard de programme auto-adaptatif pour memoires programmables
PCT/US2005/024187 WO2006023146A2 (fr) 2004-08-17 2005-07-11 Circuit a retard de programme auto-adaptatif pour memoires programmables
TW094126701A TWI396203B (zh) 2004-08-17 2005-08-08 用於改善可程式化記憶體單元陣列中資料保留之方法及機器可讀取媒體,以及可程式化記憶體電路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0408930A FR2874449B1 (fr) 2004-08-17 2004-08-17 Circuit de retard de programme auto-adaptatif pour memoires programmables

Publications (2)

Publication Number Publication Date
FR2874449A1 FR2874449A1 (fr) 2006-02-24
FR2874449B1 true FR2874449B1 (fr) 2008-04-04

Family

ID=34949605

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0408930A Expired - Fee Related FR2874449B1 (fr) 2004-08-17 2004-08-17 Circuit de retard de programme auto-adaptatif pour memoires programmables

Country Status (4)

Country Link
US (1) US7151701B2 (fr)
CN (1) CN101040344B (fr)
FR (1) FR2874449B1 (fr)
TW (1) TWI396203B (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006119327A2 (fr) * 2005-05-03 2006-11-09 Atmel Corporation Procede et systeme de generation d'impulsion de programmation lors de la programmation de dispositifs electroniques non volatils
ITMI20050798A1 (it) * 2005-05-03 2006-11-04 Atmel Corp Metodo e sistema per la generazi0ne di impulsi di programmazione durante la programmazione di dispositivi elettronici non volatili
US7307878B1 (en) * 2005-08-29 2007-12-11 Spansion Llc Flash memory device having improved program rate
US7433228B2 (en) * 2005-09-20 2008-10-07 Spansion Llc Multi-bit flash memory device having improved program rate
US7957204B1 (en) 2005-09-20 2011-06-07 Spansion Llc Flash memory programming power reduction
US8358543B1 (en) 2005-09-20 2013-01-22 Spansion Llc Flash memory programming with data dependent control of source lines
US7342830B1 (en) 2006-01-17 2008-03-11 Spansion Llc Program and program verify operations for flash memory
ITRM20060139A1 (it) * 2006-03-13 2007-09-14 Micron Technology Inc Sistema ad unita di controllo distribuito di dispositivo di memoria
US8117520B2 (en) 2007-06-15 2012-02-14 Micron Technology, Inc. Error detection for multi-bit memory
US7839703B2 (en) 2007-06-15 2010-11-23 Micron Technology, Inc. Subtraction circuits and digital-to-analog converters for semiconductor devices
US7830729B2 (en) * 2007-06-15 2010-11-09 Micron Technology, Inc. Digital filters with memory
US8130558B2 (en) 2009-02-06 2012-03-06 Infineon Technologies Ag System and method for level shifter
IES20100615A2 (en) 2009-09-23 2011-03-30 Conor Maurice Ryan A flash memory device and control method
US9218876B2 (en) 2012-05-08 2015-12-22 Micron Technology, Inc. Methods, articles and devices for pulse adjustments to program a memory cell
US9183929B2 (en) 2012-08-29 2015-11-10 Micron Technology, Inc. Systems, methods and devices for programming a multilevel resistive memory cell
US9117519B2 (en) 2012-08-29 2015-08-25 Micron Technology, Inc. Methods, devices and systems using over-reset state in a memory cell
FR3039921B1 (fr) * 2015-08-06 2018-02-16 Stmicroelectronics (Rousset) Sas Procede et systeme de controle d'une operation d'ecriture d'une donnee dans une cellule-memoire du type eeprom
CN107622785B (zh) * 2016-07-15 2020-04-14 展讯通信（上海）有限公司 测量嵌入式存储器数据读取时间的方法及***
US10032511B1 (en) * 2017-05-18 2018-07-24 Macronix International Co., Ltd. Memory with dynamic permissible bit write logic and method
US11580315B2 (en) 2020-02-10 2023-02-14 Nxp B.V. Agile time-continuous memory operation for a radio frequency identification transponder
KR102636380B1 (ko) * 2021-09-10 2024-02-15 에스케이키파운드리 주식회사 임베디드 플래시 메모리 및 그의 동작 방법

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3454520B2 (ja) * 1990-11-30 2003-10-06 インテル・コーポレーション フラッシュ記憶装置の書込み状態を確認する回路及びその方法
JPH0668686A (ja) * 1992-08-21 1994-03-11 Hitachi Ltd 半導体不揮発性記憶装置
JPH0773685A (ja) * 1993-09-06 1995-03-17 Hitachi Ltd 半導体不揮発性記憶装置
US5537358A (en) * 1994-12-06 1996-07-16 National Semiconductor Corporation Flash memory having adaptive sensing and method
EP0830684B1 (fr) * 1995-06-07 2004-08-25 Macronix International Co., Ltd. Algorithme de programmation automatique pour memoire flash en mode page a largeur et amplitude d'impulsions de programmation variables
US5627784A (en) * 1995-07-28 1997-05-06 Micron Quantum Devices, Inc. Memory system having non-volatile data storage structure for memory control parameters and method
US6032248A (en) * 1998-04-29 2000-02-29 Atmel Corporation Microcontroller including a single memory module having a data memory sector and a code memory sector and supporting simultaneous read/write access to both sectors
IT1302433B1 (it) * 1998-08-13 2000-09-05 Texas Instruments Italia Spa Circuito di lettura per dispositivi di memoria flash con perfezionatimargini di programmazione e procedimento di funzionamento
US6198662B1 (en) * 1999-06-24 2001-03-06 Amic Technology, Inc. Circuit and method for pre-erasing/erasing flash memory array
US6166962A (en) * 1999-06-24 2000-12-26 Amic Technology, Inc. Circuit and method for conditioning flash memory array
US6418054B1 (en) * 1999-08-31 2002-07-09 Advanced Micro Devices, Inc. Embedded methodology to program/erase reference cells used in sensing flash cells
US6292395B1 (en) * 1999-12-30 2001-09-18 Macronix International Co., Ltd. Source and drain sensing
US6222768B1 (en) * 2000-01-28 2001-04-24 Advanced Micro Devices, Inc. Auto adjusting window placement scheme for an NROM virtual ground array
US6292394B1 (en) * 2000-06-29 2001-09-18 Saifun Semiconductors Ltd. Method for programming of a semiconductor memory cell
US6834323B2 (en) * 2000-12-26 2004-12-21 Intel Corporation Method and apparatus including special programming mode circuitry which disables internal program verification operations by a memory
JP4063615B2 (ja) * 2002-08-30 2008-03-19 Ｎｅｃエレクトロニクス株式会社 不揮発性メモリおよびその書き込み処理方法

Also Published As

Publication number Publication date
TW200620311A (en) 2006-06-16
US20060039207A1 (en) 2006-02-23
US7151701B2 (en) 2006-12-19
TWI396203B (zh) 2013-05-11
FR2874449A1 (fr) 2006-02-24
CN101040344A (zh) 2007-09-19
CN101040344B (zh) 2011-04-20

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Legal Events

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ST Notification of lapse

Effective date: 20130430