FR2874449B1 - Circuit de retard de programme auto-adaptatif pour memoires programmables - Google Patents
Circuit de retard de programme auto-adaptatif pour memoires programmablesInfo
- Publication number
- FR2874449B1 FR2874449B1 FR0408930A FR0408930A FR2874449B1 FR 2874449 B1 FR2874449 B1 FR 2874449B1 FR 0408930 A FR0408930 A FR 0408930A FR 0408930 A FR0408930 A FR 0408930A FR 2874449 B1 FR2874449 B1 FR 2874449B1
- Authority
- FR
- France
- Prior art keywords
- self
- delay circuit
- programmable memory
- program delay
- adaptive program
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- PWPJGUXAGUPAHP-UHFFFAOYSA-N lufenuron Chemical compound C1=C(Cl)C(OC(F)(F)C(C(F)(F)F)F)=CC(Cl)=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F PWPJGUXAGUPAHP-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
- G11C2216/14—Circuits or methods to write a page or sector of information simultaneously into a nonvolatile memory, typically a complete row or word line in flash memory
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0408930A FR2874449B1 (fr) | 2004-08-17 | 2004-08-17 | Circuit de retard de programme auto-adaptatif pour memoires programmables |
US10/990,203 US7151701B2 (en) | 2004-08-17 | 2004-11-16 | Self-adaptive program delay circuitry for programmable memories |
CN2005800353144A CN101040344B (zh) | 2004-08-17 | 2005-07-11 | 可编程存储器电路及改进其单元阵列中数据保持的方法 |
EP05770835.6A EP1782426B1 (fr) | 2004-08-17 | 2005-07-11 | Circuit a retard de programme auto-adaptatif pour memoires programmables |
PCT/US2005/024187 WO2006023146A2 (fr) | 2004-08-17 | 2005-07-11 | Circuit a retard de programme auto-adaptatif pour memoires programmables |
TW094126701A TWI396203B (zh) | 2004-08-17 | 2005-08-08 | 用於改善可程式化記憶體單元陣列中資料保留之方法及機器可讀取媒體,以及可程式化記憶體電路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0408930A FR2874449B1 (fr) | 2004-08-17 | 2004-08-17 | Circuit de retard de programme auto-adaptatif pour memoires programmables |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2874449A1 FR2874449A1 (fr) | 2006-02-24 |
FR2874449B1 true FR2874449B1 (fr) | 2008-04-04 |
Family
ID=34949605
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0408930A Expired - Fee Related FR2874449B1 (fr) | 2004-08-17 | 2004-08-17 | Circuit de retard de programme auto-adaptatif pour memoires programmables |
Country Status (4)
Country | Link |
---|---|
US (1) | US7151701B2 (fr) |
CN (1) | CN101040344B (fr) |
FR (1) | FR2874449B1 (fr) |
TW (1) | TWI396203B (fr) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006119327A2 (fr) * | 2005-05-03 | 2006-11-09 | Atmel Corporation | Procede et systeme de generation d'impulsion de programmation lors de la programmation de dispositifs electroniques non volatils |
ITMI20050798A1 (it) * | 2005-05-03 | 2006-11-04 | Atmel Corp | Metodo e sistema per la generazi0ne di impulsi di programmazione durante la programmazione di dispositivi elettronici non volatili |
US7307878B1 (en) * | 2005-08-29 | 2007-12-11 | Spansion Llc | Flash memory device having improved program rate |
US7433228B2 (en) * | 2005-09-20 | 2008-10-07 | Spansion Llc | Multi-bit flash memory device having improved program rate |
US7957204B1 (en) | 2005-09-20 | 2011-06-07 | Spansion Llc | Flash memory programming power reduction |
US8358543B1 (en) | 2005-09-20 | 2013-01-22 | Spansion Llc | Flash memory programming with data dependent control of source lines |
US7342830B1 (en) | 2006-01-17 | 2008-03-11 | Spansion Llc | Program and program verify operations for flash memory |
ITRM20060139A1 (it) * | 2006-03-13 | 2007-09-14 | Micron Technology Inc | Sistema ad unita di controllo distribuito di dispositivo di memoria |
US8117520B2 (en) | 2007-06-15 | 2012-02-14 | Micron Technology, Inc. | Error detection for multi-bit memory |
US7839703B2 (en) | 2007-06-15 | 2010-11-23 | Micron Technology, Inc. | Subtraction circuits and digital-to-analog converters for semiconductor devices |
US7830729B2 (en) * | 2007-06-15 | 2010-11-09 | Micron Technology, Inc. | Digital filters with memory |
US8130558B2 (en) | 2009-02-06 | 2012-03-06 | Infineon Technologies Ag | System and method for level shifter |
IES20100615A2 (en) | 2009-09-23 | 2011-03-30 | Conor Maurice Ryan | A flash memory device and control method |
US9218876B2 (en) | 2012-05-08 | 2015-12-22 | Micron Technology, Inc. | Methods, articles and devices for pulse adjustments to program a memory cell |
US9183929B2 (en) | 2012-08-29 | 2015-11-10 | Micron Technology, Inc. | Systems, methods and devices for programming a multilevel resistive memory cell |
US9117519B2 (en) | 2012-08-29 | 2015-08-25 | Micron Technology, Inc. | Methods, devices and systems using over-reset state in a memory cell |
FR3039921B1 (fr) * | 2015-08-06 | 2018-02-16 | Stmicroelectronics (Rousset) Sas | Procede et systeme de controle d'une operation d'ecriture d'une donnee dans une cellule-memoire du type eeprom |
CN107622785B (zh) * | 2016-07-15 | 2020-04-14 | 展讯通信(上海)有限公司 | 测量嵌入式存储器数据读取时间的方法及*** |
US10032511B1 (en) * | 2017-05-18 | 2018-07-24 | Macronix International Co., Ltd. | Memory with dynamic permissible bit write logic and method |
US11580315B2 (en) | 2020-02-10 | 2023-02-14 | Nxp B.V. | Agile time-continuous memory operation for a radio frequency identification transponder |
KR102636380B1 (ko) * | 2021-09-10 | 2024-02-15 | 에스케이키파운드리 주식회사 | 임베디드 플래시 메모리 및 그의 동작 방법 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3454520B2 (ja) * | 1990-11-30 | 2003-10-06 | インテル・コーポレーション | フラッシュ記憶装置の書込み状態を確認する回路及びその方法 |
JPH0668686A (ja) * | 1992-08-21 | 1994-03-11 | Hitachi Ltd | 半導体不揮発性記憶装置 |
JPH0773685A (ja) * | 1993-09-06 | 1995-03-17 | Hitachi Ltd | 半導体不揮発性記憶装置 |
US5537358A (en) * | 1994-12-06 | 1996-07-16 | National Semiconductor Corporation | Flash memory having adaptive sensing and method |
EP0830684B1 (fr) * | 1995-06-07 | 2004-08-25 | Macronix International Co., Ltd. | Algorithme de programmation automatique pour memoire flash en mode page a largeur et amplitude d'impulsions de programmation variables |
US5627784A (en) * | 1995-07-28 | 1997-05-06 | Micron Quantum Devices, Inc. | Memory system having non-volatile data storage structure for memory control parameters and method |
US6032248A (en) * | 1998-04-29 | 2000-02-29 | Atmel Corporation | Microcontroller including a single memory module having a data memory sector and a code memory sector and supporting simultaneous read/write access to both sectors |
IT1302433B1 (it) * | 1998-08-13 | 2000-09-05 | Texas Instruments Italia Spa | Circuito di lettura per dispositivi di memoria flash con perfezionatimargini di programmazione e procedimento di funzionamento |
US6198662B1 (en) * | 1999-06-24 | 2001-03-06 | Amic Technology, Inc. | Circuit and method for pre-erasing/erasing flash memory array |
US6166962A (en) * | 1999-06-24 | 2000-12-26 | Amic Technology, Inc. | Circuit and method for conditioning flash memory array |
US6418054B1 (en) * | 1999-08-31 | 2002-07-09 | Advanced Micro Devices, Inc. | Embedded methodology to program/erase reference cells used in sensing flash cells |
US6292395B1 (en) * | 1999-12-30 | 2001-09-18 | Macronix International Co., Ltd. | Source and drain sensing |
US6222768B1 (en) * | 2000-01-28 | 2001-04-24 | Advanced Micro Devices, Inc. | Auto adjusting window placement scheme for an NROM virtual ground array |
US6292394B1 (en) * | 2000-06-29 | 2001-09-18 | Saifun Semiconductors Ltd. | Method for programming of a semiconductor memory cell |
US6834323B2 (en) * | 2000-12-26 | 2004-12-21 | Intel Corporation | Method and apparatus including special programming mode circuitry which disables internal program verification operations by a memory |
JP4063615B2 (ja) * | 2002-08-30 | 2008-03-19 | Necエレクトロニクス株式会社 | 不揮発性メモリおよびその書き込み処理方法 |
-
2004
- 2004-08-17 FR FR0408930A patent/FR2874449B1/fr not_active Expired - Fee Related
- 2004-11-16 US US10/990,203 patent/US7151701B2/en active Active
-
2005
- 2005-07-11 CN CN2005800353144A patent/CN101040344B/zh not_active Expired - Fee Related
- 2005-08-08 TW TW094126701A patent/TWI396203B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW200620311A (en) | 2006-06-16 |
US20060039207A1 (en) | 2006-02-23 |
US7151701B2 (en) | 2006-12-19 |
TWI396203B (zh) | 2013-05-11 |
FR2874449A1 (fr) | 2006-02-24 |
CN101040344A (zh) | 2007-09-19 |
CN101040344B (zh) | 2011-04-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20130430 |