FR2864109B1 - Croissance organisee de nano-structures - Google Patents
Croissance organisee de nano-structuresInfo
- Publication number
- FR2864109B1 FR2864109B1 FR0351186A FR0351186A FR2864109B1 FR 2864109 B1 FR2864109 B1 FR 2864109B1 FR 0351186 A FR0351186 A FR 0351186A FR 0351186 A FR0351186 A FR 0351186A FR 2864109 B1 FR2864109 B1 FR 2864109B1
- Authority
- FR
- France
- Prior art keywords
- nano
- structures
- organized growth
- organized
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0351186A FR2864109B1 (fr) | 2003-12-23 | 2003-12-23 | Croissance organisee de nano-structures |
PCT/FR2004/050743 WO2005064040A1 (fr) | 2003-12-23 | 2004-12-21 | Croissance organisee de nano-structures |
US10/584,053 US20070104888A1 (en) | 2003-12-23 | 2004-12-21 | Method for the organised growth of nanostructures |
JP2006546284A JP2007517136A (ja) | 2003-12-23 | 2004-12-21 | ナノストラクチャーの組織化された成長 |
EP04816590A EP1697559A1 (fr) | 2003-12-23 | 2004-12-21 | Croissance organisee de nano-structures |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0351186A FR2864109B1 (fr) | 2003-12-23 | 2003-12-23 | Croissance organisee de nano-structures |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2864109A1 FR2864109A1 (fr) | 2005-06-24 |
FR2864109B1 true FR2864109B1 (fr) | 2006-07-21 |
Family
ID=34630632
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0351186A Expired - Fee Related FR2864109B1 (fr) | 2003-12-23 | 2003-12-23 | Croissance organisee de nano-structures |
Country Status (5)
Country | Link |
---|---|
US (1) | US20070104888A1 (fr) |
EP (1) | EP1697559A1 (fr) |
JP (1) | JP2007517136A (fr) |
FR (1) | FR2864109B1 (fr) |
WO (1) | WO2005064040A1 (fr) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2922680A1 (fr) * | 2007-10-18 | 2009-04-24 | Commissariat Energie Atomique | Procede de fabrication d'un composant microelectronique avec realisation de nanocristaux metalliques localises sur une couche en materiau dielectrique |
JPWO2010082345A1 (ja) * | 2009-01-19 | 2012-06-28 | 日新電機株式会社 | シリコンドット形成方法及びシリコンドット形成装置 |
DE102009041264A1 (de) * | 2009-09-11 | 2011-03-24 | IPHT Jena Institut für Photonische Technologien e.V. | Verfahren zur Herstellung von optisch aktiven Nanostrukturen |
US8853078B2 (en) * | 2011-01-30 | 2014-10-07 | Fei Company | Method of depositing material |
US9768338B2 (en) | 2012-01-23 | 2017-09-19 | Stc.Unm | Multi-source optimal reconfigurable energy harvester |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6240723A (ja) * | 1985-08-17 | 1987-02-21 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH08973B2 (ja) * | 1986-03-31 | 1996-01-10 | キヤノン株式会社 | 堆積膜形成法 |
JP2525773B2 (ja) * | 1986-06-30 | 1996-08-21 | キヤノン株式会社 | 半導体装置及びその製造方法 |
US4908226A (en) * | 1988-05-23 | 1990-03-13 | Hughes Aircraft Company | Selective area nucleation and growth method for metal chemical vapor deposition using focused ion beams |
US5083033A (en) * | 1989-03-31 | 1992-01-21 | Kabushiki Kaisha Toshiba | Method of depositing an insulating film and a focusing ion beam apparatus |
US5082359A (en) * | 1989-11-28 | 1992-01-21 | Epion Corporation | Diamond films and method of growing diamond films on nondiamond substrates |
JPH03262911A (ja) * | 1990-03-14 | 1991-11-22 | Matsushita Electric Ind Co Ltd | 原子間力顕微鏡用探針およびその製造方法 |
US5363793A (en) * | 1990-04-06 | 1994-11-15 | Canon Kabushiki Kaisha | Method for forming crystals |
JPH04118916A (ja) * | 1990-04-20 | 1992-04-20 | Hitachi Ltd | 半導体装置およびその製造方法 |
US5504340A (en) * | 1993-03-10 | 1996-04-02 | Hitachi, Ltd. | Process method and apparatus using focused ion beam generating means |
JP2884054B2 (ja) * | 1995-11-29 | 1999-04-19 | 工業技術院長 | 微細加工方法 |
US6806228B2 (en) * | 2000-06-29 | 2004-10-19 | University Of Louisville | Low temperature synthesis of semiconductor fibers |
KR20030055346A (ko) * | 2000-12-11 | 2003-07-02 | 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 | 나노센서 |
US6835613B2 (en) * | 2001-12-06 | 2004-12-28 | University Of South Florida | Method of producing an integrated circuit with a carbon nanotube |
US6761803B2 (en) * | 2001-12-17 | 2004-07-13 | City University Of Hong Kong | Large area silicon cone arrays fabrication and cone based nanostructure modification |
US7342225B2 (en) * | 2002-02-22 | 2008-03-11 | Agere Systems, Inc. | Crystallographic metrology and process control |
US7208094B2 (en) * | 2003-12-17 | 2007-04-24 | Hewlett-Packard Development Company, L.P. | Methods of bridging lateral nanowires and device using same |
-
2003
- 2003-12-23 FR FR0351186A patent/FR2864109B1/fr not_active Expired - Fee Related
-
2004
- 2004-12-21 JP JP2006546284A patent/JP2007517136A/ja active Pending
- 2004-12-21 EP EP04816590A patent/EP1697559A1/fr not_active Withdrawn
- 2004-12-21 WO PCT/FR2004/050743 patent/WO2005064040A1/fr not_active Application Discontinuation
- 2004-12-21 US US10/584,053 patent/US20070104888A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20070104888A1 (en) | 2007-05-10 |
JP2007517136A (ja) | 2007-06-28 |
EP1697559A1 (fr) | 2006-09-06 |
FR2864109A1 (fr) | 2005-06-24 |
WO2005064040A1 (fr) | 2005-07-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20100831 |