FR2856855A1 - Dispositif de commande d'un commutateur commande en tension - Google Patents

Dispositif de commande d'un commutateur commande en tension

Info

Publication number
FR2856855A1
FR2856855A1 FR0350271A FR0350271A FR2856855A1 FR 2856855 A1 FR2856855 A1 FR 2856855A1 FR 0350271 A FR0350271 A FR 0350271A FR 0350271 A FR0350271 A FR 0350271A FR 2856855 A1 FR2856855 A1 FR 2856855A1
Authority
FR
France
Prior art keywords
voltage
digital signal
switch
controlled switch
control device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR0350271A
Other languages
English (en)
Inventor
Marc Sabut
Zanten Francois Van
Jean Luc Moro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0350271A priority Critical patent/FR2856855A1/fr
Priority to US10/877,747 priority patent/US20040263220A1/en
Publication of FR2856855A1 publication Critical patent/FR2856855A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
    • H03K3/356147—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit using pass gates

Landscapes

  • Electronic Switches (AREA)

Abstract

L'invention concerne un dispositif de commande d'un commutateur commandé en tension (2) à partir d'un signal numérique, comprenant un premier moyen (14) pour fournir le signal numérique à la borne de sortie du commutateur, un deuxième moyen (20, 22) pour polariser la borne de commande du commutateur à un niveau (Vp) supérieur à la tension de seuil du commutateur (Vt) et inférieur à la somme de ladite tension de seuil (Vt) et de la tension maximale (Vdd) du signal numérique, et un troisième moyen (16, 18) pour ajouter ou soustraire audit niveau (Vp) ladite tension maximale (Vdd) du signal numérique respectivement lors des fronts montant et descendant de l'inverse logique du signal numérique.
FR0350271A 2003-06-27 2003-06-27 Dispositif de commande d'un commutateur commande en tension Withdrawn FR2856855A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0350271A FR2856855A1 (fr) 2003-06-27 2003-06-27 Dispositif de commande d'un commutateur commande en tension
US10/877,747 US20040263220A1 (en) 2003-06-27 2004-06-25 Voltage-controlled switch control device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0350271A FR2856855A1 (fr) 2003-06-27 2003-06-27 Dispositif de commande d'un commutateur commande en tension

Publications (1)

Publication Number Publication Date
FR2856855A1 true FR2856855A1 (fr) 2004-12-31

Family

ID=33515558

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0350271A Withdrawn FR2856855A1 (fr) 2003-06-27 2003-06-27 Dispositif de commande d'un commutateur commande en tension

Country Status (2)

Country Link
US (1) US20040263220A1 (fr)
FR (1) FR2856855A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2901931A1 (fr) * 2006-05-31 2007-12-07 St Microelectronics Sa Circuit decaleur de niveau

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5321324A (en) * 1993-01-28 1994-06-14 United Memories, Inc. Low-to-high voltage translator with latch-up immunity
US5969542A (en) * 1997-05-21 1999-10-19 Advanced Micro Devices, Inc. High speed gate oxide protected level shifter
EP1096681A1 (fr) * 1999-10-28 2001-05-02 Pixtech S.A. Commutateur très haute tension
US6344764B2 (en) * 1998-11-16 2002-02-05 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device
US20030011418A1 (en) * 2001-07-16 2003-01-16 Matsushita Electric Industrial Co., Ltd. Level shifting circuit

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2543872B2 (ja) * 1986-08-13 1996-10-16 株式会社東芝 増幅回路
US4831596A (en) * 1987-05-01 1989-05-16 Texas Instruments Incorporated Pass gate with low transistor junction breakdown susceptibility
JP3102833B2 (ja) * 1994-09-06 2000-10-23 株式会社 沖マイクロデザイン 昇圧回路
US5917368A (en) * 1996-05-08 1999-06-29 Telefonatiebolaget Lm Ericsson Voltage-to-current converter
JP2988387B2 (ja) * 1996-08-20 1999-12-13 日本電気株式会社 半導体装置
JP3481121B2 (ja) * 1998-03-20 2003-12-22 松下電器産業株式会社 レベルシフト回路
JP3770741B2 (ja) * 1998-11-20 2006-04-26 富士通株式会社 半導体集積回路、および半導体集積回路内のトランジスタのソース電位切換方法
KR100297324B1 (ko) * 1998-12-16 2001-08-07 김영환 반도체 집적회로의 증폭기
US6646469B2 (en) * 2001-12-11 2003-11-11 Koninklijke Philips Electronics N.V. High voltage level shifter via capacitors
US20030169224A1 (en) * 2002-03-11 2003-09-11 Mitsubishi Denki Kabushiki Kaisha Amplitude conversion circuit for converting signal amplitude and semiconductor device using the amplitude conversion circuit
US6788130B2 (en) * 2002-09-25 2004-09-07 Texas Instruments Incorporated Efficient charge pump capable of high voltage operation
US6864718B2 (en) * 2003-02-20 2005-03-08 Taiwan Semiconductor Manufacturing Company Charge pump level converter (CPLC) for dual voltage system in very low power application

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5321324A (en) * 1993-01-28 1994-06-14 United Memories, Inc. Low-to-high voltage translator with latch-up immunity
US5969542A (en) * 1997-05-21 1999-10-19 Advanced Micro Devices, Inc. High speed gate oxide protected level shifter
US6344764B2 (en) * 1998-11-16 2002-02-05 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device
EP1096681A1 (fr) * 1999-10-28 2001-05-02 Pixtech S.A. Commutateur très haute tension
US20030011418A1 (en) * 2001-07-16 2003-01-16 Matsushita Electric Industrial Co., Ltd. Level shifting circuit

Also Published As

Publication number Publication date
US20040263220A1 (en) 2004-12-30

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20060228