FR2842649B1 - Procede d'augmentation de l'aire d'une couche utile de materiau reportee sur un support - Google Patents

Procede d'augmentation de l'aire d'une couche utile de materiau reportee sur un support

Info

Publication number
FR2842649B1
FR2842649B1 FR0209020A FR0209020A FR2842649B1 FR 2842649 B1 FR2842649 B1 FR 2842649B1 FR 0209020 A FR0209020 A FR 0209020A FR 0209020 A FR0209020 A FR 0209020A FR 2842649 B1 FR2842649 B1 FR 2842649B1
Authority
FR
France
Prior art keywords
increasing
support
area
useful layer
material reflected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0209020A
Other languages
English (en)
Other versions
FR2842649A1 (fr
Inventor
Christophe Maleville
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0209020A priority Critical patent/FR2842649B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Priority to PCT/EP2003/007856 priority patent/WO2004025722A1/fr
Priority to TW092119345A priority patent/TWI266381B/zh
Priority to DE60332241T priority patent/DE60332241D1/de
Priority to US10/619,596 priority patent/US7294557B2/en
Priority to EP03794837A priority patent/EP1522098B1/fr
Priority to JP2004535050A priority patent/JP4652053B2/ja
Priority to AU2003246719A priority patent/AU2003246719A1/en
Priority to AT03794837T priority patent/ATE465513T1/de
Publication of FR2842649A1 publication Critical patent/FR2842649A1/fr
Application granted granted Critical
Publication of FR2842649B1 publication Critical patent/FR2842649B1/fr
Priority to US11/858,164 priority patent/US7956441B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank
    • Y10T428/219—Edge structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
FR0209020A 2002-07-17 2002-07-17 Procede d'augmentation de l'aire d'une couche utile de materiau reportee sur un support Expired - Fee Related FR2842649B1 (fr)

Priority Applications (10)

Application Number Priority Date Filing Date Title
FR0209020A FR2842649B1 (fr) 2002-07-17 2002-07-17 Procede d'augmentation de l'aire d'une couche utile de materiau reportee sur un support
AT03794837T ATE465513T1 (de) 2002-07-17 2003-07-16 Verfahren zur vergrösserung der fläche einer nutzschicht eines auf eine stütze übertragenen materials
DE60332241T DE60332241D1 (de) 2002-07-17 2003-07-16 Verfahren zur vergrösserung der fläche einer nutzschicht eines auf eine stütze übertragenen materials
US10/619,596 US7294557B2 (en) 2002-07-17 2003-07-16 Method of increasing the area of a useful layer of material transferred onto a support
EP03794837A EP1522098B1 (fr) 2002-07-17 2003-07-16 Procede permettant d'augmenter la surface d'une couche utile d'un materiau apres transfert sur un support
JP2004535050A JP4652053B2 (ja) 2002-07-17 2003-07-16 支持基板へ転送される有用な材料層の面積を増加させる方法
PCT/EP2003/007856 WO2004025722A1 (fr) 2002-07-17 2003-07-16 Procede permettant d'augmenter la surface d'une couche utile d'un materiau apres transfert sur un support
TW092119345A TWI266381B (en) 2002-07-17 2003-07-16 A method of increasing the area of a useful layer of material transferred onto a support
AU2003246719A AU2003246719A1 (en) 2002-07-17 2003-07-16 A method of increasing the area of a useful layer of material transferred onto a support
US11/858,164 US7956441B2 (en) 2002-07-17 2007-09-20 Method of increasing the area of a useful layer of material transferred onto a support

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0209020A FR2842649B1 (fr) 2002-07-17 2002-07-17 Procede d'augmentation de l'aire d'une couche utile de materiau reportee sur un support

Publications (2)

Publication Number Publication Date
FR2842649A1 FR2842649A1 (fr) 2004-01-23
FR2842649B1 true FR2842649B1 (fr) 2005-06-24

Family

ID=29797485

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0209020A Expired - Fee Related FR2842649B1 (fr) 2002-07-17 2002-07-17 Procede d'augmentation de l'aire d'une couche utile de materiau reportee sur un support

Country Status (2)

Country Link
US (2) US7294557B2 (fr)
FR (1) FR2842649B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4838504B2 (ja) * 2004-09-08 2011-12-14 キヤノン株式会社 半導体装置の製造方法
FR2920912B1 (fr) * 2007-09-12 2010-08-27 S O I Tec Silicon On Insulator Tech Procede de fabrication d'une structure par transfert de couche
US7757200B2 (en) * 2007-11-16 2010-07-13 International Business Machines Corporation Structure of an apparatus for programming an electronically programmable semiconductor fuse
US7927975B2 (en) 2009-02-04 2011-04-19 Micron Technology, Inc. Semiconductor material manufacture

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0636413B2 (ja) * 1990-03-29 1994-05-11 信越半導体株式会社 半導体素子形成用基板の製造方法
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JP2825048B2 (ja) * 1992-08-10 1998-11-18 信越半導体株式会社 半導体シリコン基板
US5597410A (en) * 1994-09-15 1997-01-28 Yen; Yung C. Method to make a SOI wafer for IC manufacturing
JPH1093122A (ja) 1996-09-10 1998-04-10 Nippon Telegr & Teleph Corp <Ntt> 薄膜太陽電池の製造方法
FR2774510B1 (fr) * 1998-02-02 2001-10-26 Soitec Silicon On Insulator Procede de traitement de substrats, notamment semi-conducteurs
US6664169B1 (en) * 1999-06-08 2003-12-16 Canon Kabushiki Kaisha Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus
EP1189266B1 (fr) * 2000-03-29 2017-04-05 Shin-Etsu Handotai Co., Ltd. Procede d'obtention de tranches de silicium ou de soi et tranches ainsi obtenues
JP4846915B2 (ja) * 2000-03-29 2011-12-28 信越半導体株式会社 貼り合わせウェーハの製造方法
JP2001284622A (ja) * 2000-03-31 2001-10-12 Canon Inc 半導体部材の製造方法及び太陽電池の製造方法
FR2842646B1 (fr) * 2002-07-17 2005-06-24 Soitec Silicon On Insulator Procede d'augmentation de l'aire d'une couche utile de materiau reportee sur un support

Also Published As

Publication number Publication date
US20040082148A1 (en) 2004-04-29
US20080006909A1 (en) 2008-01-10
US7956441B2 (en) 2011-06-07
US7294557B2 (en) 2007-11-13
FR2842649A1 (fr) 2004-01-23

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20120330