FR2841380A1 - Encapsulation of an object under a controlled atmosphere in a cavity provided with a vent that is stopped with a porous material prior to final sealing - Google Patents
Encapsulation of an object under a controlled atmosphere in a cavity provided with a vent that is stopped with a porous material prior to final sealing Download PDFInfo
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- FR2841380A1 FR2841380A1 FR0207853A FR0207853A FR2841380A1 FR 2841380 A1 FR2841380 A1 FR 2841380A1 FR 0207853 A FR0207853 A FR 0207853A FR 0207853 A FR0207853 A FR 0207853A FR 2841380 A1 FR2841380 A1 FR 2841380A1
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- Prior art keywords
- cavity
- porous material
- porous
- evens
- intermediate layer
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- 239000011148 porous material Substances 0.000 title claims abstract description 48
- 238000005538 encapsulation Methods 0.000 title claims abstract description 22
- 238000004320 controlled atmosphere Methods 0.000 title claims abstract description 15
- 238000007789 sealing Methods 0.000 title abstract description 9
- 238000000034 method Methods 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 19
- 230000007547 defect Effects 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 229910021426 porous silicon Inorganic materials 0.000 claims description 3
- 241000282320 Panthera leo Species 0.000 claims description 2
- 239000000463 material Substances 0.000 description 22
- 239000007789 gas Substances 0.000 description 13
- 238000004377 microelectronic Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
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- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052729 chemical element Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
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- 238000005516 engineering process Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
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- 238000004528 spin coating Methods 0.000 description 2
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
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- 238000011256 aggressive treatment Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
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- 238000001704 evaporation Methods 0.000 description 1
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- 239000011521 glass Substances 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011325 microbead Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
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- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000005373 porous glass Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000012995 silicone-based technology Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00333—Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0145—Hermetically sealing an opening in the lid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
B14172.3/PRB14172.3 / PR
PROCEDE D' ENCAPSULATION D'UN OBJET SOUS ATMOSPHERE METHOD FOR ENCAPSULATING AN OBJECT UNDER ATMOSPHERE
CONTROLEECONTROLLED
DESCRIPTIONDESCRIPTION
DOMAINE TECHNIQUETECHNICAL AREA
La presente invention concerne un procede d' encapsulation d' un objet sous atmosphere contr81ee, c'est a dire sous vice ou sous une atmosphere gazeuse, par exemple une atmosphere diun gaz neutre tel que The present invention relates to a method for encapsulating an object in a controlled atmosphere, ie under a gas or a gaseous atmosphere, for example an atmosphere of a neutral gas such as
['helium.['helium.
L' invention stapplique principalement aux dispositifs microelectroniques ou optoelectroniques ainsi qu'aux dispositifs semiconducteurs et, plus particulierement, aux microbolometres, aux dispositifs a micropointes ("microtip") et aux dispositifs a ecrans plats. Wile s'applique egalement aux dispositifs a base d'autres materiaux que les semiconducteurs et aux The invention is mainly applicable to microelectronic or optoelectronic devices as well as to semiconductor devices and, more particularly, microbolometers, microtip devices and flat screen devices. Wile also applies to devices based on other materials than semiconductors and
dispositifs a couches minces.Thin film devices.
Plus generalement, l' invention s'applique a tout domaine ou le confinement d'un objet sous atmosphere contr81ee presente un interet, par exemple les domaines nucleaire et spatial, les telecommunications, la medecine, l' instrumentation, les More generally, the invention applies to any field where the confinement of an object in a controlled atmosphere has an interest, for example the nuclear and space domains, telecommunications, medicine, instrumentation,
capteurs et la biologic.sensors and the biologic.
ETAT DE LA TECHNIQUE ANTERIEURESTATE OF THE PRIOR ART
On connalt de nombreuses methodes pour confiner, ou encapsuler, un dispositif dans une Many methods are known for confining, or encapsulating, a device in a
atmosphere contr81ee.Controlled atmosphere.
L' encapsulation a pour but d'empecher des gaz contaminants d'etre en contact avec ce dispositif, tout en permettant aux informations, par exemple aux signaux electriques, de circuler du dispositif vers le monde exterieur. On considere uniquement dans ce qui suit le confinement d'une zone apres y avoir fait le vice. En fonction des besoins, on peut avantageusement remplacer le vice par un gaz predefini, en modifiant de facon The purpose of the encapsulation is to prevent contaminating gases from being in contact with this device, while allowing information, for example electrical signals, to flow from the device to the outside world. In the following, the confinement of an area is considered after having made the defect. According to the needs, it is advantageous to replace the defect with a predefined gas, modifying in a manner
appropriee le procede de confinement utilise. appropriate the containment method used.
Une solution couramment employee pour l' encapsulation diun dispositif microelectronique consiste a placer ce dernier dans une enceinte isolante, par exemple un boltier scelle, que l'on met sous vice par pompage. Le dispositif est relic a l'exterieur par un assemblage hermetique de pistes conductrices. Le vice est maintenu par soudure ou par A commonly used solution for the encapsulation of a microelectronic device is to place the latter in an insulating enclosure, for example a sealed boltier, which is pumped under pressure. The device is relic to the outside by a hermetic assembly of conductive tracks. The vice is maintained by welding or by
scellement hermetique.hermetic sealing.
Cette solution est couteuse et done difficile a mettre en uvre dans le cas diune production industrielle. Il est par consequent avantageux d'utiliser une methode collective, afin de This solution is expensive and therefore difficult to implement in the case of industrial production. It is therefore advantageous to use a collective method in order to
diminuer les couts.reduce costs.
Precisons des maintenant que la presente invention peut s'appliquer a une encapsulation collective ou individuelle sur tranche de silicium Let us specify now that the present invention can be applied to a collective or individual encapsulation on silicon wafer
("silicon wafer").("silicon wafer").
Nous presentons ci-apres l'etat de la technique pour une telle encapsulation, dans le domaine We present below the state of the art for such encapsulation, in the field
de la microelectronique ou de lioptoelectronique. microelectronics or lioptoelectronics.
I1 existe de nombreuses techniques pour former des cavites depressurisees. On connalt principalement les techniques de soudure ("bonding"), There are many techniques for forming depressurized cavities. We mainly know the bonding techniques,
de scellement d' evens et de piegeage de contaminants. sealing of evens and trapping of contaminants.
Cependant, ces techniques connuesHowever, these known techniques
presentent des inconvenients.have disadvantages.
Par exemple, en ce qui concerne les diverges techniques de soudure, on peut citer en particulier le risque de microfissuration, les contraintes de mise en uvre, l'utilisation de traitements agressifs, la fragilite, la sensibilite a l'humidite et le risque d'une contamination par ltor dans le cas d'une soudure par eutectique utilisant ce metal. Des techniques de bouchage d'une cavite par CVD ciest a dire par dep8t en phase vapeur ("chemical vapor deposition"), par evaporation ou par pulverisation ont egalement ete utilisees. Mais la press ion lors du depot ne permet generalement pas de garantir un ultravide dans la cavite, dans des For example, with regard to the technical welding divergences, mention may in particular be made of the risk of microcracking, the constraints of implementation, the use of aggressive treatments, the fragility, the sensitivity to moisture and the risk of a contamination by ltor in the case of a eutectic welding using this metal. Techniques for capping a cavity by CVD, ie by vapor deposition ("chemical vapor deposition"), evaporation or spraying, have also been used. But the pressure during the deposit does not generally allow to guarantee an ultrahigh vacuum in the cavity, in
conditions industrielles.industrial conditions.
En outre, une technique particuliere de bouchage d' evens est divulguee par les documents suivants: [1] US 6 036872A, R.A. Wood et al. [2] Article de M. Bartek et al., Vacuum sealing of microcavities using metal evaporation, In addition, a particular technique of evens capping is disclosed by the following documents: [1] US 6,036,872A, R. A. Wood et al. [2] Article by M. Bartek et al., Vacuum sealing of microcavities using metal evaporation,
Sensors and Actuators, A61 (1997), pages 364 a 368. Sensors and Actuators, A61 (1997), pp. 364-368.
Le document [1] decrit un dispositif hybride alors que le document [2] decrit un dispositif monolithique. Selon la technique divulguee, on depose une couche d'un materiau etanche pour boucher un event. Ce materiau doit etre imperativement non poreux pour The document [1] describes a hybrid device while the document [2] describes a monolithic device. According to the disclosed technique, a layer of a waterproof material is deposited to seal an event. This material must be imperatively non-porous for
eviter toute fuite.avoid any leaks.
Par cette technique, la basse pression qu'il est possible d'obtenir dans la cavite pourvue de l' evens est limitee inferieurement par celle qui est utilisee lors du dep8t du materiau etanche, ce qui restreint considerablement le niveau de vice By this technique, the low pressure that can be obtained in the cavity provided with the evens is limited below that which is used during the dep8t of the waterproof material, which considerably restricts the level of vice.
accessible.accessible.
EXPOSE DE L'INVENTIONSUMMARY OF THE INVENTION
La presente invention a pour but deThe present invention aims to
remedier a cet inconvenient.remedy this inconvenient.
Le procede objet de l' invention est une amelioration de la technique decrite dans le document [1] et consiste a former une couche intermediaire en The process which is the subject of the invention is an improvement of the technique described in document [1] and consists in forming an intermediate layer in
materiau poreux avant la fermeture etanche de l' evens. porous material before the waterproof closing of the evens.
Cette couche intermediaire permet, apres avoir obtenu l' atmosphere adequate dans la cavite, d'avoir le temps de former la couche de materiau etanche. En effet, les fuites a travers cette couche intermediaire en materiau poreux vent relativement lenses par rapport au temps de depSt de la couche de materiau etanche. Cette derriere peut done etre formee This intermediate layer allows, after obtaining the proper atmosphere in the cavity, to have time to form the layer of waterproof material. Indeed, the leakage through this intermediate layer porous material wind relatively vis-à-vis the deposition time of the waterproof material layer. This back can be formed
meme dans une atmosphere polluante.even in a polluting atmosphere.
En d'autres termes, la presente invention consiste a utiliser un materiau poreux pour ralentir les echanges gazeux entre l'interieur de la cavite et In other words, the present invention consists in using a porous material to slow the gaseous exchanges between the interior of the cavity and
le milieu exterieur.the outside environment.
I1 est alors possible de vider lentement cette cavite en la disposant dans une enceinte a vice, eventuellement a une temperature superieure a la temperature ambiante (de l'ordre de 20 C). Dans un deuxieme temps on rebouche, par une technique It is then possible to slowly empty this cavity by disposing it in a defective chamber, possibly at a temperature higher than the ambient temperature (of the order of 20 C). In a second time we rebouche, by a technique
appropriee, le trou obture par le materiau poreux. appropriate, the hole closed by the porous material.
Comme les echanges gazeux entre la cavite et le milieux exterieur vent ralentis, il est possible de reboucher ce trou a une pression elevee, sans pour As the gaseous exchanges between the cavity and the external environment are slowed down, it is possible to fill the hole at a high pressure, without
autant "casser le vice" dans la cavite. as much "breaking the vice" in the cavity.
La presente invention permet liencapsulation sous ultravide, meme a des temperatures The present invention enables ultra-low vacuum encapsulation, even at high temperatures.
inferieures a 300 C.less than 300 C.
Le materiau poreux permet de vider la cavite dans des temps et a des temperatures qui vent The porous material makes it possible to empty the cavity in times and at temperatures that
compatibles avec des procedes industrials. compatible with industrial processes.
L'invention peut etre mise en uvre dans une grande variete de geometries ou de sequences de realisation. De fa,con precise, la presente invention concerne un procede d' encapsulation d' au moins un objet sous atmosphere contr81ee, procede dans lequel - on place cet objet dans une cavite, cette cavite etant pourvue d'au moins un event prevu pour mettre l'interieur de la cavite en contact avec l'exterieur de celle-ci, - on met cette cavite sous une atmosphere controlee et - on ferme l' evens de fa,con etanche, ce procede etant caracterise en ce que l'on obture l' evens par une couche intermediaire en materiau The invention can be implemented in a wide variety of geometries or sequences of realization. Specifically, the present invention relates to a method for encapsulating at least one object in a controlled atmosphere, a method in which the object is placed in a cavity, said cavity being provided with at least one event provided for the interior of the cavity in contact with the outside thereof, - this cavity is placed under a controlled atmosphere and - it closes the evens F, con tight, this process being characterized in that it closes the evens by an intermediate layer of material
poreux avant de fermer lt evens de facon etanche. porous before closing lt evens in a watertight manner.
Selon un mode de mise en uvre prefere du procede objet de ['invention, on ferme lievent par une couche d' encapsulation etanche que l' on forme sur la According to a preferred mode of implementation of the method object of the invention, it is closed by a waterproof encapsulation layer that is formed on the
couche intermediaire en materiau poreux. intermediate layer of porous material.
Selon un mode de mise en muvre particulier du procede objet de ['invention, - on forme un dispositif ainsi qu'une structure d' encapsulation de ce dispositif, ce dernier constituent ['objet a encapsuler, - on forme, autour du dispositif, la cavite pourvue de l' evens, - on met cette cavite sous l' atmosphere contr81ee et - - on ferme l' evens de facon etanche, et lton obture l' evens par la couche intermediaire en materiau poreux avant de fermer According to a particular mode of implementation of the method object of the invention, a device is formed as well as an encapsulation structure of this device, the latter constituting the object to be encapsulated around the device. the cavite provided with the evens, - this cavity is placed under the controlled atmosphere and - - the evens is closed in a watertight manner, and the evens is sealed off by the intermediate layer made of porous material before closing
l' evens de facon etanche.the evens in a waterproof way.
Le dispositif que l'on forme et que l'on encapsule peut etre un microcomposant ou un ensemble de microcomposants tels que des composants microelectroniques, des composants optoelectroniques, The device that is formed and encapsulated may be a microcomponent or a set of microcomponents such as microelectronic components, optoelectronic components,
des capteurs ou des actionneurs.sensors or actuators.
Selon un mode de mi se en muvre part i cul ier de l 'invention, le dispositif a encapsuler est forme sur un substrat en silicium et le materiau poreux est choisi parmi le silicium poreux, le germanium poreux et les alliages du type Sil-x-yGexcy poreux, avec O<x<l,O<y<l,O<x+y<1. Selon un autre mode de mise en muvre particulier, le dispositif est forme sur un substrat et le materiau poreux est un alliage poreux comportant des According to an embodiment of the invention, the device to be encapsulated is formed on a silicon substrate and the porous material is chosen from porous silicon, porous germanium and alloys of the Sil-x type. -yGexcy porous, with O <x <l, O <y <l, O <x + y <1. According to another particular mode of implementation, the device is formed on a substrate and the porous material is a porous alloy comprising
elements chimiques qui vent presents dans ce substrat. chemical elements that are present in this substrate.
Selon un premier mode de mise en muvre particulier du procede objet de ['invention, l' atmosphere controlee est le vice, on place la cavite pourvue de la couche intermediaire en materiau poreux dans une enceinte a vice et l'on fait le vice dans la cavite, a travers cette couche intermediaire, avant de According to a first particular embodiment of the method of the invention, the controlled atmosphere is the vice, the cavite provided with the intermediate layer of porous material is placed in a defective enclosure and vice is made in the cavity, through this intermediate layer, before
fermer l' evens de facon etanche.close the evens in a waterproof way.
Dans ce cas, le materiau poreux peut etre In this case, the porous material can be
un materiau poreux de type getter.a porous material of getter type.
Selon un deuxieme mode de mise en muvre particulier, l' atmosphere contr81ee est un gaz, on place la cavite pourvue de la couche intermediaire en materiau poreux dans une enceinte contenant ce gaz et l'on remplit la cavite de ce gaz, a travers cette couche intermediaire, avant de fermer l' evens de facon According to a second particular embodiment, the controlled atmosphere is a gas, the cavity provided with the intermediate layer of porous material is placed in an enclosure containing this gas and the cavity is filled with this gas, through this intermediate layer, before closing the evens way
etanche.waterproof.
On donne ci-apres divers avantages de ['invention. Le procede objet de l' invention permet la mise sous ultra-vice (ou sous atmosphere gazeuse controlee), a basse temperature (inferieure au seuil de degradation des dispositifs) et de maniere collective (done a fortiori de maniere individuelle), de dispositifs formes sur des plaquettes semiconductrices The following are various advantages of the invention. The method of the invention allows ultra-vice (or controlled gaseous atmosphere), low temperature (below the degradation threshold of the devices) and collectively (thus a fortiori individual), devices forms on semiconductor wafers
(par exemple en silicium).(for example silicon).
Ce procede permet de conserver un haut niveau de purete du milieu dans lequel est immerge un dispositif, lors de la fabrication puis de la mise en boltier. Avec ['invention, le dispositif n'a pas a subir une remise a l'air ou un choc thermique, chimique ou electrique, contrairement a ce qui a lieu avec This method makes it possible to maintain a high level of purity of the medium in which a device is immersed, during the manufacture and then in the boltier setting. With the invention, the device does not have to undergo a release to the air or a thermal shock, chemical or electrical, contrary to what takes place with
d' autres techniques d' encapsulation. other encapsulation techniques.
Le procede objet de l' invention s'integre parfaitement aux techniques collectives de la microelectronique ou de lioptoelectronique, et permet The method of the invention is perfectly integrated with the collective techniques of microelectronics or lioptoelectronics, and allows
done de diminuer les couts de fabrication. therefore reduce manufacturing costs.
En outre, ce procede est relativement simple car il ne necessite pas lTutilisation de niveaux In addition, this method is relatively simple because it does not require the use of levels
de masquage complexes pour aboutir a liencapsulation. complex masking to achieve linkcapsulation.
De plus, ce procede autorise le choix des parametres de mise en uvre dans des plages assez larges et staccommode aisement diune grande variete de Moreover, this method allows the choice of implementation parameters in fairly wide ranges and easily accommodates a wide variety of parameters.
materiaux et de processus operatoires. materials and operating processes.
Pour encapsuler sous vice un objet conformement a ['invention, il suffit de deposer un materiau poreux approprie, choisi dans le vaste ensemble de tels materiaux (verres, polymeres, semi conducteurs), puis de retirer les gaz contaminants dans lenceinte a vice par un pompage de duree suffisante, et enfin de deposer la couche d' encapsulation finale en un temps suffisamment court pour eviter le remplissage de la cavite contenant ['objet. In order to encapsulate under an object in accordance with the invention, it is sufficient to deposit an appropriate porous material chosen from the vast array of such materials (glasses, polymers, semiconductors), then to remove the contaminating gases in the defect chamber by a pumping of sufficient duration, and finally to deposit the final encapsulation layer in a sufficiently short time to avoid filling the cavity containing the object.
BREVE DESCRIPTION DES DESSINSBRIEF DESCRIPTION OF THE DRAWINGS
La presente invention sera mieux comprise a The present invention will be better understood
la lecture de la description d'exemples de realisation reading the description of realizations
donnes ci-apres, a titre purement indicatif et nullement limitatif, en faisant reference aux dessins annexes, sur lesquels: - la figure 1A est une vue en coupe schematique diun dispositif encapsule conformement a ['invention, - la figure 1B est une vue en coupe schematique diun autre dispositif encapsule conformement a ['invention, et - les figures 2A a 2G illustrent schematiquement diverges etapes d'un mode de mise en given below, purely by way of indication and in no way limitative, with reference to the appended drawings, in which: FIG. 1A is a schematic sectional view of a device encapsulated in accordance with the invention, FIG. schematically cutting another device encapsulates according to the invention, and - Figures 2A to 2G schematically illustrate diverges steps of a mode of implementation
muvre particulier du procede obet de ['invention. particular work of the method of the invention.
EXPOSE DETAILLE DE MODES DE REALISATION PARTICULIERS DETAILED DESCRIPTION OF PARTICULAR EMBODIMENTS
La figure 1A illustre schematiquement une encapsulation diun dispositif microelectronique 2 FIG. 1A schematically illustrates an encapsulation of a microelectronic device 2
conformement a ['invention.in accordance with the invention.
Ce dispositif 2 peut etre un simple composant microelectronique ou un ensemble de tels composants, par exemple une puce ("chip") microelectronique ou une matrice de composants tous identiques. Ce dispositif 2 est forme sur un substrat 4 comprenant, comme on le volt sur la figure 1A, un This device 2 may be a simple microelectronic component or a set of such components, for example a chip ("chip") microelectronics or a matrix of components all identical. This device 2 is formed on a substrate 4 comprising, as shown in FIG. 1A, a
percage evase 6 a proximite du dispositif 2. evase drill 6 near the device 2.
Dans cet exemple, on utilise aussi un autre substrat 8 qui est pourvu d'un evidement 10 dont la In this example, another substrate 8 is used which is provided with a recess 10 whose
taille est superieure a celle du dispositif 2. size is greater than device 2.
On assemble les substrats 4 et 8 l'un a l'autre de facon que le dispositif 2 se trouve en regard de cette evidement 10. On definit ainsi une The substrates 4 and 8 are assembled together so that the device 2 is opposite this recess 10.
cavite 12 dans laquelle se trouve le dispositif 2. cavity 12 in which the device 2 is located.
Pour assembler les substrats 4 et 8, on utilise un anneau de scellement 14 qui delimite une zone de ['assemblage, contenant la cavite 12 (et done To assemble the substrates 4 and 8, a sealing ring 14 is used which delimits a zone of the assembly, containing the cavity 12 (and thus
le dispositif 2) ainsi que le percage 6. the device 2) as well as the piercing 6.
L'anneau de scellement 14 permet de fixer les substrats l'un a l'autre de fa,con etanche pour pouvoir faire ensuite le vice dans la zone qu'il delimite et done dans la cavite 12, par l'intermediaire du per,cage 6 qui consiste un event, en vue d'encapsuler The sealing ring 14 makes it possible to fix the substrates to each other so as to be able to make the defect in the zone it delimits and thus in the cavity 12, via the per cage 6 which consists of an event, in order to encapsulate
sous vice le dispositif 2.under vice the device 2.
Conformement a ['invention, on obture l' evens 6 au moyen d'une couche intermediaire 16 en materiau poreux. On depose cette derriere sur le substrat 4 de fa,con a boucher lt evens 6, la couche de materiau poreux sietendant jusqu'a l'autre substrat 8 In accordance with the invention, the evens 6 is closed by means of an intermediate layer 16 of porous material. This back is deposited on the substrate 4 in order to block the evens 6, the layer of porous material extending to the other substrate 8
comme on le volt sur la figure 1A.as shown in FIG. 1A.
Cette couche 16 permet de ralentir les echanges gazeux entre la cavite 12 et le milieu exterieur. On dispose ensuite la structure obtenue dans une enceinte a vice 18 et l'on fait le vice dans cette derriere pendant un temps raisonnable, typiquement quelques heures. La cavite 12 se vice alors This layer 16 slows the gaseous exchanges between the cavity 12 and the external environment. The structure obtained is then placed in a defective enclosure 18 and vice is made in this rear for a reasonable time, typically a few hours. Cavite 12 is vice then
a travers la couche poreuse 16.through the porous layer 16.
On depose ensuite une couche d'encapsulation etanche ou couche de scellement etanche sur la couche en materiau poreux 16 de fa,con a A waterproof encapsulation layer or waterproof seal layer is then deposited on the porous material layer 16 so as to
fermer l' evens 6 et done la cavite 12 de fa,con etanche. close the evens 6 and thus the cavity 12 of fa con con.
Ce depot est rendu possible par le fait que le vice se maintient pendant plusieurs minutes dans la cavite. Le dispositif 2 est ainsi encapsule sous vice dans l'exemple de la figure 1A. La figure 1B est une variante de la figure This deposit is made possible by the fact that the vice is maintained for several minutes in the cavity. The device 2 is thus encapsulated under vice in the example of FIG. 1A. Figure 1B is a variant of the figure
1A et elle est a comparer a la cavite scellee micro- 1A and it is to compare to the sealed cavity micro-
usinee en surface du document [2] mats, dans le cas de la figure lB, les events vent bouches avec un materiau plant on the surface of the document [2] mats, in the case of Figure lB, vent events vents with a material
poreux.porous.
La figure 1B reprend les principales parties decrites dans la figure 1A mais sans le cordon, ou anneau, de scellement puisqu'il n'y a plus d'hybridation: dans le cas de la figure 1B, les events FIG. 1B shows the principal parts described in FIG. 1A but without the cordon, or ring, of sealing since there is no more hybridization: in the case of FIG. 1B, the events
vent places lateralement.wind sits laterally.
Des objets a encapsuler 2a vent dans une cavite 12a, sur un substrat 8a. La cavite est fermee par une couche 19a (correspondent a la couche structurelle du document [2]). Des events lateraux 6a vent prevus entre cette couche 19a et le substrat. Ces events vent bouches par un materiau poreux 16a. Une couche de scellement etanche 20a recouvre ce materiau Objects to encapsulate 2a wind in a cavity 12a, on a substrate 8a. The cavity is closed by a layer 19a (correspond to the structural layer of the document [2]). Lateral vents 6a wind provided between this layer 19a and the substrate. These vents vent mouths by a porous material 16a. A sealing layer 20a waterproof covers this material
et la couche de fermeture de la cavite. and the closure layer of the cavity.
L' invention permet d'obtenir, dans la cavite 12, une tres basse pression, inferieure a 104Pa, stable dans le temps, et ce avec des techniques de The invention makes it possible to obtain, in the cavity 12, a very low pressure, less than 104 Pa, which is stable over time, and with the aid of
fabrication industrielles.industrial manufacturing.
On precise que les sorties electriques du dispositif 2 peuvent deboucher a l'exterieur de la cavite 12 si cela est necessaire, en utilisant les It is specified that the electrical outputs of the device 2 can lead to the outside of the cavity 12 if this is necessary, by using the
techniques classiques de la microelectronique. classical techniques of microelectronics.
Dans un autre exemple, au lieu de faire le vice dans la cavite 12, on remplit cette derriere d'un gaz, par exemple un gaz neutre tel que l'azote ou In another example, instead of making the defect in the cavity 12, this back is filled with a gas, for example a neutral gas such as nitrogen or
['helium, suivant la nature du dispositif 2. helium, depending on the nature of the device 2.
Ce remplissage se fait en mettant la structure dans une enceinte appropriee, contenant ce gaz sous pression. Ce dernier remplit alors la cavite This filling is done by putting the structure in a suitable enclosure, containing this pressurized gas. The latter then fills the cavity
12 en traversant la couche poreuse 16. 12 through the porous layer 16.
Ensuite, on depose comme precedemment la couche etanche 20, ce qui permet encore d'encapsuler le dispositif sous atmosphere contr61ee (une atmosphere Then, as before, the waterproof layer 20 is deposited, which further allows the device to be encapsulated under controlled atmosphere (an atmosphere
gazeuse dans ce cas).gaseous in this case).
Outre les applications deja donnees de la presente invention, precisons que cette derriere siapplique a toutes sortes de dispositifs, par exemple aux diodes, aux. dispositifs d'affichage ou aux microlasers et ce, dans divers domaines tels que: appareils de tests de mesure, optique, capteurs solaires, microscopic, metrologie, imagerie et connectique (en plus des domaines deja mentionnes plus haut). I1 convient de noter que le procede objet de l' invention permet aussi bien l 'encapsulation collective que l' encapsulation individuelle de In addition to the already given applications of the present invention, it should be pointed out that this latter is applicable to all kinds of devices, for example to diodes, sensors, and the like. display devices or microlasers and this, in various areas such as: measurement testing devices, optics, solar collectors, microscopic, metrology, imaging and connectivity (in addition to the areas already mentioned above). It should be noted that the method which is the subject of the invention allows both collective encapsulation and individual encapsulation of
dispositifs.devices.
On choisit le materiau de la couche poreuse en fonction des contraintes thermiques, mecaniques, chimiques ou optiques propres aux applications souhaitees. On choisit par exemple un materiau poreux de type "getter" ou du silicium poreux ou du germanium poreux ou un alliage Si1-x-yGexCy poreux dans le cas ou l'on utilise une technologie a base de silicium pour la The material of the porous layer is chosen according to the thermal, mechanical, chemical or optical stresses of the desired applications. For example, a porous material of the "getter" type or porous silicon or porous germanium or a porous Si1-x-yGexCy alloy is chosen in the case where a silicon-based technology is used for
fabrication du dispositif que l'on veut encapsuler. manufacture of the device that we want to encapsulate.
Dans le cas d'autres technologies, par exemple des technologies a base de composes semiconducteurs III-V ou II-VI, on peut utiliser un alliage poreux comportant des elements chimiques presents dans le substrat sur lequel on forme le dispositif, afin de garantir une compatibilite chimique In the case of other technologies, for example technologies based on III-V or II-VI semiconductor compounds, it is possible to use a porous alloy comprising chemical elements present in the substrate on which the device is formed, in order to guarantee a chemical compatibility
maximale.Max.
I1 est possible de contr81er la taille et It is possible to control the size and
la distribution des pores des materiaux mentionnes ci- the pore distribution of the materials mentioned above
dessus par les conditions de depOt de ces materiaux. above by the conditions of deposit of these materials.
A titre d'exemple, pour encapsuler un dispositif tel qu'un microbolometre conformement a ['invention, on procede de la facon suivante: ouverture d'un event, liberation des microponts du microbolometre,dep8t d'un materiau poreux pour boucher l' evens, mise sous vice de la cavite contenant le microbolometre dans lienceinte servant au depot du materiau poreux et dep8t d'une couche standard, apte a By way of example, to encapsulate a device such as a microbolometer in accordance with the invention, the following procedure is carried out: opening of an event, release of microbridge microbeads, depopulation of a porous material to block the microbolometer. evens, putting under the cavite containing the microbolometer in the background for the deposition of the porous material and dep't a standard layer, suitable for
encapsuler de facon etanche le materiau poreux. waterproof encapsulate the porous material.
Si besoin est. cette sequence de base peut If needed. this basic sequence can
etre completee par des etapes intermediaires. be completed by intermediate steps.
Par exemple, il peut etre necessaire d'ajouter une etape de rebouchage partiel de l' evens afin de minimiser, pour des raisons mecaniques, For example, it may be necessary to add a step of partially filling the evens to minimize, for mechanical reasons,
l'epaisseur du materiau poreux a deposer. the thickness of the porous material to be deposited.
En effet ce materiau poreux est moins solide que le materiau dense correspondent car le Indeed this porous material is less solid than the corresponding dense material because the
nombre de liaisons atomiques y est plus faible. number of atomic bonds is lower.
On explique dans ce qui suit diverges etapes d'un exemple du procede objet de ['invention en The following is an explanation of the various steps of an example of the method which is the object of the invention.
faisant reference aux figures 2A a 2G. referring to Figures 2A-2G.
On va d'abord commenter la figure 2G qui est une vue en coupe laterale schematique-et partielle We will first comment on Figure 2G which is a schematic and partial lateral cross-sectional view.
d'un dispositif encapsule conformement a ['invention. of a device encapsulates according to the invention.
Ce dispositif est par exemple un dispositif This device is for example a device
microelectronique tel qu'un microbolometre. microelectronics such as a microbolometer.
On precise que l'axe X de croissance des couches permettant d'obtenir la structure que l'on volt sur la figure 2G est oriente du teas vers le haut de It is specified that the X-axis of growth of the layers making it possible to obtain the structure that we have in FIG. 2G is directed from the teas to the top of
cette figure.this figure.
L'empilement des diverges couches est simplement donne a titre d'exemple. Il s'agit d'une coupe (vue de c6te) perpendiculaire a l'axe de croissance X. Cet empilement n'est pas necessairement The stacking of the diiferges layers is simply given as an example. This is a section (side view) perpendicular to the growth axis X. This stacking is not necessarily
borne lateralement.terminal laterally.
Sur la figure 2G, les references 22, 24, 26, 28, 30, 32 et 36 representent respectivement un substrat, le dispositif, une cavite, un trou, une couche poreuse, une couche d' encapsulation etanche et In FIG. 2G, the references 22, 24, 26, 28, 30, 32 and 36 respectively represent a substrate, the device, a cavity, a hole, a porous layer, a watertight encapsulation layer and
un capot.a cap.
Le substrat 22, sur lequel les differentes couches utilisees vent deposees, est par exemple en The substrate 22, on which the different layers used deposited, is for example in
silicium.silicon.
Le dispositif 24 (par exemple un microbolometre) est separe du capot 36 par les colonnes 34. Le trou 28 est un event permettant de faire le vice dans la cavite 26. Au lieu d'un event, il pourrait y en The device 24 (for example a microbolometer) is separated from the cover 36 by the columns 34. The hole 28 is an event allowing the defect to be made in the cavity 26. Instead of an event, there could be
avoir plusieurs.to have several.
Le nombre et la taille des events ou orifices vent choisis pour faire correctement le vice dans la cavite 26 tout en conservant une solidite mecanique suffisante pour le capot 36 pour permettre de reboucher ulterieurement le ou les events. La couche poreuse 30 permet de ralentir les echanges gazeux entre la cavite et l'exterieur de cette cavite. La couche etanche 32 permet de stopper ces The number and size of vents or orifices chosen to correctly make the defect in the cavity 26 while maintaining sufficient mechanical strength for the cover 36 to allow later re-closing the or vents. The porous layer 30 slows the gaseous exchanges between the cavity and the outside of this cavity. The waterproof layer 32 makes it possible to stop these
echanges gazeux.gaseous exchanges.
On explique maintenant les diverges etapes de fabrication de ce dispositif (microbolometre) We now explain the different manufacturing steps of this device (microbolometer)
encapsule en faisant reference aux figures 2A a 2G. encapsulates with reference to FIGS. 2A-2G.
On commence par former le microbolometre 24 We start by forming the microbolometer 24
sur le substrat 22 (figure 2A).on the substrate 22 (Figure 2A).
Sur le micobolometre, on forme ensuite les colonnes 34 de ce microbolometre ainsi qu'une couche de On the micobolometer, the columns 34 of this microbolometer are then formed together with a layer of
resine 38 qui entoure ces colonnes (figure 2B). resin 38 which surrounds these columns (Figure 2B).
On forme ensuite une couche 36 constituent le capot par un depSt approprie sur la couche de resine A cover layer 36 is then formed by a suitable depot on the resin layer.
38 (figure 2C).38 (Figure 2C).
On forme ensuite le ou les events 28 a Then the event (s) 28 a
travers le capot 36 (figure 2D).through the hood 36 (Figure 2D).
On elimine ensuite la resine par une attaque chimique appropriee a travers les events (figure 2E). A la place de la resine, on obtient ainsi The resin is then removed by appropriate chemical etching through the vents (FIG. 2E). In place of the resin, we obtain
la cavite 26 dans la structure formee. cavity 26 in the formed structure.
On depose ensuite la couche de materiau The layer of material is then deposited
poreux 30 sur le capot 36 (figure 2F). porous 30 on the hood 36 (Figure 2F).
On met ensuite la cavite 26 sous vice, par pompage a travers les events, puis on forme la couche d'encapsulation etanche 32 sur la couche 30 (figure 2G). On precise que le dispositif 24 (par exemple un microbolometre) est depose, puis les colonnes realisees, par des techniques de depot standard. Ces colonnes ont des proprietes electriques, mecaniques, thermiques et optiques appropriees a ['application souhaitee. Wiles peuvent 8tre par exemple en nitrure de silicium ou en oxynitrure de silicium, en nitrure d'aluminium ou en The cavity 26 is then placed under pressure, by pumping through the vents, and then the sealed encapsulation layer 32 is formed on the layer 30 (FIG. 2G). It is specified that the device 24 (for example a microbolometer) is deposited, then the columns produced, by standard deposit techniques. These columns have electrical, mechanical, thermal and optical properties appropriate to the desired application. Wiles can be for example silicon nitride or silicon oxynitride, aluminum nitride or
nitrure de titane.titanium nitride.
Le capot est egalement depose par une methode standard. Il est par exemple en silicium amorphe ou en germanium poreux que lion depose par LPCVD ou PECVD. D'autres materiaux peuvent etre deposes The hood is also removed by a standard method. It is for example amorphous silicon or porous germanium lion deposited by LPCVD or PECVD. Other materials may be deposited
a la tournette ("spin coating") ou par un procede sol- spin coating (spin coating) or by a
gel. Les orifices ou events vent perces dans ce capot pour permettre d'evacuer la resine adjacente aux colonnes et de liberer en meme temps les microponts gel. The orifices or vent vents in this bonnet to evacuate the resin adjacent to the columns and to release at the same time the microbonts
lorsque le dispositif est un microbolometre suspendu. when the device is a suspended microbolometer.
Dans l'etape illustree par la figure 2F le materiau poreux, par exemple du silicium nanoporeux, est depose par une methode standard, par exemple par depot a basse temperature (de 0 a 450 C), a forte In the step illustrated in FIG. 2F, the porous material, for example nanoporous silicon, is deposited by a standard method, for example by deposition at low temperature (from 0 to 450 ° C.), with strong
dilution d'hydrogene (superieure a 51). hydrogen dilution (greater than 51).
L'utilisation diune basse temperature (typiquement 80 C) pour le depot de ce materiau poreux permet de ne pas degrader le composant que l'on veut encapsuler. La taille du ou des events et l'epaisseur du materiau poreux vent choisis afin de garantir une tenue mecanique suffisante de l 'ensemble, une vitesse de diffusion appropriee pour la mise sous vice en un temps raisonnable et un maintien du vice pendant le dep8t du materiau d' encapsulation finale (etape The use of a low temperature (typically 80 C) for the deposition of this porous material makes it possible not to degrade the component that one wants to encapsulate. The size of the vent (s) and the thickness of the porous material are selected to ensure sufficient mechanical strength of the assembly, proper diffusion speed for the timely operation of the defect and maintenance of the defect during the depot. final encapsulation material (stage
illustree par figure 2G).illustrated in Figure 2G).
On utilise un materiau poreux compatible avec la technique de fabrication utilisee et les A porous material compatible with the manufacturing technique used is used.
performances sonhaitees pour le dispositif. performance sonhaitees for the device.
Ce materiau poreux est typiquement du silicium amorphe poreux ou du SiGe poreux ou du germanium poreux ou du Si1-x-yGexCy poreux, avec 0Sx<1 et O<y<1. D'autres materiaux poreux peuvent etre utilises suivant les besoins, comme par exemple des verres poreux, des ceramiques poreuses, des polymeres This porous material is typically porous amorphous silicon or porous SiGe or porous germanium or porous Si1-x-yGexCy, with 0Sx <1 and O <y <1. Other porous materials can be used as needed, such as porous glasses, porous ceramics, polymers
poreux ou des metaux poreux.porous or porous metals.
Le materiau poreux utilise doit simplement adherer a la surface du ou des events et ne pas poser The porous material used must simply adhere to the surface of the event (s) and do not pose
de problemes de corrosion ou de fissuration. problems of corrosion or cracking.
Il doit aussi etre choisi en fonction du dispositif encapsule, par exemple etre transparent aux longueurs d'onde detectees par le dispositif si celui It must also be chosen according to the device encapsulates, for example be transparent to the wavelengths detected by the device if the one
ci est un detecteur optique.This is an optical detector.
Les materiaux ci-dessus permettent de faire varier la taille, la distribution et la microstructure des pores afin controler la tenue mecanique, la vitesse de diffusion des gaz, la permeabilite et les proprietes optiques (en particulier l'indice optique et The above materials make it possible to vary the size, the distribution and the microstructure of the pores in order to control the mechanical behavior, the diffusion rate of the gases, the permeability and the optical properties (in particular the optical index and
l' absorption optique).optical absorption).
L'utilisation du materiau poreux conformement a l' invention permet l' integration monolithique du boltier d' encapsulation par rapport au dispositif. Du point de vue industrial, une integration monolithique permet d'effectuer des operations collectives sans avoir besoin d'une remise a l'air ou The use of the porous material according to the invention allows the monolithic integration of the encapsulation boltier with respect to the device. From the industrial point of view, a monolithic integration makes it possible to carry out collective operations without the need for a return to the air or
dans une atmosphere moins propre.in a less clean atmosphere.
De plus la technique monolithique est avantageuse en termes de cout, par effet de masse. I1 est plus rapide d'encapsuler tous les dispositifs dinne meme plaquette semiconductrice, en une seule etape, que de mettre les dispositifs les uns apres les autres dans des boltiers, avec des risques supplementaires de In addition the monolithic technique is advantageous in terms of cost, by mass effect. It is faster to encapsulate all the devices of a single semiconductor wafer, in one step, than to put the devices one after the other in boltiers, with additional risks of
casser ces dispositifs lors de leur manutention. break these devices during handling.
On precise que pour obtenir Sil-x-yGexcy a l'etat poreux, eventuellement dope avec de l'oxygene, du bore ou de l'azote, en fonction des besoins, on peut proceder a une oxydation anodique d'une couche non It is specified that in order to obtain porous Sil-x-yGexcy, possibly doped with oxygen, boron or nitrogen, depending on the requirements, anodic oxidation of a non-aqueous layer can be carried out.
poreuse de ce materiau.porous of this material.
Pour ce faire, on injecte un fort courant electrique dans la couche qui est en contact avec un To do this, a strong electric current is injected into the layer that is in contact with a
bain acide typiquement a basse dacide fluorhydrique. acid bath typically has low hydrofluoric acid.
Cette methode peut etre mise en muvre en faisant flotter le dispositif tete en teas sur le bain, afin d'eviter de remplir la cavite au cas ou la pression du This method can be implemented by floating the head device teas on the bath, to avoid filling the cavity in case the pressure of the
liquide casserait la couche poreuse. liquid would break the porous layer.
De preference, on fabrique le materiau poreux en choissant des parametres appropries lors du Preferably, the porous material is made by selecting appropriate parameters during the
dep8t de la couche faite de ce materiau. dep8t of the layer made of this material.
Les pores ont typiquement une taille superieure a quelques nanometres, ce qui permet de The pores are typically larger than a few nanometers, which allows
laisser passer quasiment tous les atomes. let almost all the atoms pass.
Le reglage de la connexite des pores permet de controler la diffusivite de la couche poreuse. De basses temperatures de depSt (typiquement 100 C) et de fortes concentrations d'hydrogene dans la phase gazeuse permettent The adjustment of the connectivity of the pores makes it possible to control the diffusivity of the porous layer. Low deposition temperatures (typically 100 ° C) and high concentrations of hydrogen in the gas phase
generalement d'obtenir un materiau amorphe poreux. generally to obtain a porous amorphous material.
Des traitements apres depSt (par exemple avec un plasma d'hydrogene) permettent d'obtenir une couche de silicium amorphe poreux (de l'ordre de 20nm Treatments after depSt (for example with a hydrogen plasma) make it possible to obtain a layer of porous amorphous silicon (of the order of 20 nm
d'epaisseur dans le cas du plasma).thick in the case of plasma).
Claims (9)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0207853A FR2841380A1 (en) | 2002-06-25 | 2002-06-25 | Encapsulation of an object under a controlled atmosphere in a cavity provided with a vent that is stopped with a porous material prior to final sealing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0207853A FR2841380A1 (en) | 2002-06-25 | 2002-06-25 | Encapsulation of an object under a controlled atmosphere in a cavity provided with a vent that is stopped with a porous material prior to final sealing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2841380A1 true FR2841380A1 (en) | 2003-12-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR0207853A Pending FR2841380A1 (en) | 2002-06-25 | 2002-06-25 | Encapsulation of an object under a controlled atmosphere in a cavity provided with a vent that is stopped with a porous material prior to final sealing |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2841380A1 (en) |
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| JP2006099057A (en) * | 2004-09-27 | 2006-04-13 | Idc Llc | Method and device for packaging substrate |
| EP1640327A3 (en) * | 2004-09-27 | 2007-12-05 | Idc, Llc | Method and system for packaging mems devices with incorporated getter |
| US7668415B2 (en) | 2004-09-27 | 2010-02-23 | Qualcomm Mems Technologies, Inc. | Method and device for providing electronic circuitry on a backplate |
| US7701631B2 (en) | 2004-09-27 | 2010-04-20 | Qualcomm Mems Technologies, Inc. | Device having patterned spacers for backplates and method of making the same |
| US7715080B2 (en) | 2006-04-13 | 2010-05-11 | Qualcomm Mems Technologies, Inc. | Packaging a MEMS device using a frame |
| US7935555B2 (en) | 2004-09-27 | 2011-05-03 | Qualcomm Mems Technologies, Inc. | Method and system for sealing a substrate |
| US7978396B2 (en) | 2003-08-15 | 2011-07-12 | Qualcomm Mems Technologies, Inc. | Optical interference display panel |
| US8004736B2 (en) | 2003-08-18 | 2011-08-23 | Qualcomm Mems Technologies, Inc. | Optical interference display panel and manufacturing method thereof |
| US8115983B2 (en) | 2004-09-27 | 2012-02-14 | Qualcomm Mems Technologies, Inc. | Method and system for packaging a MEMS device |
| US8124434B2 (en) | 2004-09-27 | 2012-02-28 | Qualcomm Mems Technologies, Inc. | Method and system for packaging a display |
| US8379392B2 (en) | 2009-10-23 | 2013-02-19 | Qualcomm Mems Technologies, Inc. | Light-based sealing and device packaging |
| FR2981059A1 (en) * | 2011-10-11 | 2013-04-12 | Commissariat Energie Atomique | METHOD FOR ENCAPSULATING MICRO-DEVICE BY SHELF CAP AND GETTER DEPOSITION THROUGH THE HOOD |
| CN103569949A (en) * | 2012-07-31 | 2014-02-12 | 法国原子能及替代能源委员会 | Method for encapsulating at least a microelectronic device |
| EP2803634A1 (en) * | 2013-05-15 | 2014-11-19 | Commissariat à l'Énergie Atomique et aux Énergies Alternatives | Method for encapsulating a microelectronic device with the injection of a noble gas through a material permeable to this noble gas |
| US9701533B2 (en) | 2014-11-13 | 2017-07-11 | Commissariat à l'énergie atomique et aux énergies alternatives | Package structure including a cavity coupled to an injection gas channel composed of a permeable material |
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