FR2816330B1 - Monocristaux, procede de fabrication de monocristaux par croissance en solution et applications - Google Patents
Monocristaux, procede de fabrication de monocristaux par croissance en solution et applicationsInfo
- Publication number
- FR2816330B1 FR2816330B1 FR0014423A FR0014423A FR2816330B1 FR 2816330 B1 FR2816330 B1 FR 2816330B1 FR 0014423 A FR0014423 A FR 0014423A FR 0014423 A FR0014423 A FR 0014423A FR 2816330 B1 FR2816330 B1 FR 2816330B1
- Authority
- FR
- France
- Prior art keywords
- single crystals
- applications
- manufacturing
- growing solution
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/14—Phosphates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0014423A FR2816330B1 (fr) | 2000-11-09 | 2000-11-09 | Monocristaux, procede de fabrication de monocristaux par croissance en solution et applications |
CN2006101216460A CN1924114B (zh) | 2000-11-09 | 2001-11-07 | 单晶及其应用 |
CNB018186386A CN1318653C (zh) | 2000-11-09 | 2001-11-07 | 溶液中生长单晶的制造方法 |
US10/415,351 US6929693B2 (en) | 2000-11-09 | 2001-11-07 | Single crystals, method for making single crystals by growth in solution and uses |
RU2003117008/15A RU2280719C2 (ru) | 2000-11-09 | 2001-11-07 | Монокристаллы, способ получения монокристаллов путем выращивания в растворе и варианты применения |
PCT/FR2001/003442 WO2002038836A1 (fr) | 2000-11-09 | 2001-11-07 | Monocristaux, procede de fabrication de monocristaux par croissance en solution et applications |
AU2002223766A AU2002223766A1 (en) | 2000-11-09 | 2001-11-07 | Single crystals, method for making single crystals by growth in solution and uses |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0014423A FR2816330B1 (fr) | 2000-11-09 | 2000-11-09 | Monocristaux, procede de fabrication de monocristaux par croissance en solution et applications |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2816330A1 FR2816330A1 (fr) | 2002-05-10 |
FR2816330B1 true FR2816330B1 (fr) | 2003-06-20 |
Family
ID=8856266
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0014423A Expired - Fee Related FR2816330B1 (fr) | 2000-11-09 | 2000-11-09 | Monocristaux, procede de fabrication de monocristaux par croissance en solution et applications |
Country Status (6)
Country | Link |
---|---|
US (1) | US6929693B2 (fr) |
CN (2) | CN1924114B (fr) |
AU (1) | AU2002223766A1 (fr) |
FR (1) | FR2816330B1 (fr) |
RU (1) | RU2280719C2 (fr) |
WO (1) | WO2002038836A1 (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7996901B2 (en) * | 2006-03-31 | 2011-08-09 | Lenovo (Singapore) Pte. Ltd. | Hypervisor area for email virus testing |
CN105256377B (zh) * | 2015-11-10 | 2017-10-20 | 中国科学院上海光学精密机械研究所 | Kdp类晶体生长的载晶架 |
CN107805844B (zh) * | 2017-10-21 | 2020-10-16 | 中国科学院上海光学精密机械研究所 | Kdp类晶体长籽晶限制生长方法 |
FR3087451B1 (fr) * | 2018-10-17 | 2020-11-06 | Commissariat Energie Atomique | Procede de fabrication d'un monocristal par croissance en solution permettant un piegeage de cristaux parasites |
CN109283769A (zh) * | 2018-11-26 | 2019-01-29 | 山东大学 | 一种宽带倍频晶体器件 |
CN110055579B (zh) * | 2019-04-10 | 2021-03-02 | 中国科学院上海光学精密机械研究所 | Kdp类晶体长籽晶单锥生长方法 |
CN111876827B (zh) * | 2020-07-21 | 2022-06-07 | 山东大学 | 一种磷酸二氢钾类单晶光纤及其生长方法与应用 |
CN113089074B (zh) * | 2021-03-30 | 2023-01-20 | 中国科学院上海光学精密机械研究所 | Dkdp晶体长籽晶二维运动生长方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4517048A (en) * | 1983-10-31 | 1985-05-14 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method for minimizing convection during crystal growth from solution |
JPS61191588A (ja) * | 1985-02-16 | 1986-08-26 | Univ Osaka | 電気透析法を用いた水溶性イオン結晶の育成法 |
AT398255B (de) * | 1992-09-04 | 1994-11-25 | Avl Verbrennungskraft Messtech | Hydrothermalzuchtverfahren zum züchten von grossen kristallen oder kristallschichten aus einem metallorthophosphat unter verwendung einer keimplatte |
CN2289806Y (zh) * | 1996-03-13 | 1998-09-02 | 中国科学院福建物质结构研究所 | 磷酸二氢钾大单晶生长用的载晶架及其籽晶 |
FR2764909B1 (fr) * | 1997-06-24 | 1999-07-16 | Commissariat Energie Atomique | Fabrication de monocristaux en forme de plaques par croissance en solution |
US5904772A (en) * | 1997-08-18 | 1999-05-18 | The Regents Of The University Of California | Device for isolation of seed crystals during processing of solution |
CN2326617Y (zh) * | 1997-10-28 | 1999-06-30 | 中国科学院福建物质结构研究所 | 用于快速生长大截面磷酸二氢钾晶体的载晶架 |
-
2000
- 2000-11-09 FR FR0014423A patent/FR2816330B1/fr not_active Expired - Fee Related
-
2001
- 2001-11-07 AU AU2002223766A patent/AU2002223766A1/en not_active Abandoned
- 2001-11-07 US US10/415,351 patent/US6929693B2/en not_active Expired - Fee Related
- 2001-11-07 WO PCT/FR2001/003442 patent/WO2002038836A1/fr not_active Application Discontinuation
- 2001-11-07 RU RU2003117008/15A patent/RU2280719C2/ru not_active IP Right Cessation
- 2001-11-07 CN CN2006101216460A patent/CN1924114B/zh not_active Expired - Fee Related
- 2001-11-07 CN CNB018186386A patent/CN1318653C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20040011278A1 (en) | 2004-01-22 |
CN1473211A (zh) | 2004-02-04 |
AU2002223766A1 (en) | 2002-05-21 |
RU2280719C2 (ru) | 2006-07-27 |
WO2002038836A1 (fr) | 2002-05-16 |
CN1924114B (zh) | 2010-05-12 |
CN1318653C (zh) | 2007-05-30 |
CN1924114A (zh) | 2007-03-07 |
FR2816330A1 (fr) | 2002-05-10 |
US6929693B2 (en) | 2005-08-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20160729 |