FR2815473B1 - Diac planar symetrique - Google Patents
Diac planar symetriqueInfo
- Publication number
- FR2815473B1 FR2815473B1 FR0013179A FR0013179A FR2815473B1 FR 2815473 B1 FR2815473 B1 FR 2815473B1 FR 0013179 A FR0013179 A FR 0013179A FR 0013179 A FR0013179 A FR 0013179A FR 2815473 B1 FR2815473 B1 FR 2815473B1
- Authority
- FR
- France
- Prior art keywords
- diac
- planar symmetric
- symmetric
- planar
- diac planar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8618—Diodes with bulk potential barrier, e.g. Camel diodes, Planar Doped Barrier diodes, Graded bandgap diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Light Receiving Elements (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0013179A FR2815473B1 (fr) | 2000-10-13 | 2000-10-13 | Diac planar symetrique |
US10/398,622 US7190006B2 (en) | 2000-10-13 | 2001-10-12 | Symmetrical planar diac |
PCT/FR2001/003178 WO2002031888A1 (fr) | 2000-10-13 | 2001-10-12 | Diac planar symetrique |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0013179A FR2815473B1 (fr) | 2000-10-13 | 2000-10-13 | Diac planar symetrique |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2815473A1 FR2815473A1 (fr) | 2002-04-19 |
FR2815473B1 true FR2815473B1 (fr) | 2003-03-21 |
Family
ID=8855349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0013179A Expired - Fee Related FR2815473B1 (fr) | 2000-10-13 | 2000-10-13 | Diac planar symetrique |
Country Status (3)
Country | Link |
---|---|
US (1) | US7190006B2 (fr) |
FR (1) | FR2815473B1 (fr) |
WO (1) | WO2002031888A1 (fr) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100555668C (zh) * | 2004-08-27 | 2009-10-28 | 松下电器产业株式会社 | 浪涌保护用半导体器件 |
CN100466169C (zh) * | 2007-04-27 | 2009-03-04 | 济南晶恒有限责任公司 | 一种超薄双向触发管的制造方法 |
JP2009252889A (ja) * | 2008-04-03 | 2009-10-29 | Nec Electronics Corp | サージ保護素子 |
FR2960097A1 (fr) * | 2010-05-11 | 2011-11-18 | St Microelectronics Tours Sas | Composant de protection bidirectionnel |
US8835975B1 (en) | 2013-05-10 | 2014-09-16 | Ixys Corporation | Ultra-fast breakover diode |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2625710A1 (de) | 1976-06-09 | 1977-12-15 | Standard Elektrik Lorenz Ag | Diodenmatrix |
JPS5691478A (en) * | 1979-12-26 | 1981-07-24 | Hitachi Ltd | Manufacture of punch-through type diode |
JPH07120788B2 (ja) * | 1986-07-16 | 1995-12-20 | 関西日本電気株式会社 | プレ−ナ型半導体装置 |
US4967256A (en) * | 1988-07-08 | 1990-10-30 | Texas Instruments Incorporated | Overvoltage protector |
US5880511A (en) | 1995-06-30 | 1999-03-09 | Semtech Corporation | Low-voltage punch-through transient suppressor employing a dual-base structure |
-
2000
- 2000-10-13 FR FR0013179A patent/FR2815473B1/fr not_active Expired - Fee Related
-
2001
- 2001-10-12 WO PCT/FR2001/003178 patent/WO2002031888A1/fr active Application Filing
- 2001-10-12 US US10/398,622 patent/US7190006B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20040021150A1 (en) | 2004-02-05 |
FR2815473A1 (fr) | 2002-04-19 |
US7190006B2 (en) | 2007-03-13 |
WO2002031888A1 (fr) | 2002-04-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20090630 |