FR2815359B1 - Nettoyage apres gravure d'un dielectrique associe au cuivre - Google Patents
Nettoyage apres gravure d'un dielectrique associe au cuivreInfo
- Publication number
- FR2815359B1 FR2815359B1 FR0013267A FR0013267A FR2815359B1 FR 2815359 B1 FR2815359 B1 FR 2815359B1 FR 0013267 A FR0013267 A FR 0013267A FR 0013267 A FR0013267 A FR 0013267A FR 2815359 B1 FR2815359 B1 FR 2815359B1
- Authority
- FR
- France
- Prior art keywords
- engraving
- copper
- cleaning
- dielectric associated
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title 1
- 238000004140 cleaning Methods 0.000 title 1
- 229910052802 copper Inorganic materials 0.000 title 1
- 239000010949 copper Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0013267A FR2815359B1 (fr) | 2000-10-17 | 2000-10-17 | Nettoyage apres gravure d'un dielectrique associe au cuivre |
PCT/FR2001/003141 WO2002033742A1 (fr) | 2000-10-17 | 2001-10-11 | Nettoyage apres gravure d'un dielectrique associe au cuivre |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0013267A FR2815359B1 (fr) | 2000-10-17 | 2000-10-17 | Nettoyage apres gravure d'un dielectrique associe au cuivre |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2815359A1 FR2815359A1 (fr) | 2002-04-19 |
FR2815359B1 true FR2815359B1 (fr) | 2003-05-16 |
Family
ID=8855421
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0013267A Expired - Fee Related FR2815359B1 (fr) | 2000-10-17 | 2000-10-17 | Nettoyage apres gravure d'un dielectrique associe au cuivre |
Country Status (2)
Country | Link |
---|---|
FR (1) | FR2815359B1 (fr) |
WO (1) | WO2002033742A1 (fr) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5496491A (en) * | 1991-01-25 | 1996-03-05 | Ashland Oil Company | Organic stripping composition |
US5556482A (en) * | 1991-01-25 | 1996-09-17 | Ashland, Inc. | Method of stripping photoresist with composition containing inhibitor |
JP3160344B2 (ja) * | 1991-01-25 | 2001-04-25 | アシュランド インコーポレーテッド | 有機ストリッピング組成物 |
FR2792737B1 (fr) * | 1999-04-26 | 2001-05-18 | Atochem Elf Sa | Compositions pour le decapage de photoresists dans la fabrication de circuits integres |
-
2000
- 2000-10-17 FR FR0013267A patent/FR2815359B1/fr not_active Expired - Fee Related
-
2001
- 2001-10-11 WO PCT/FR2001/003141 patent/WO2002033742A1/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2002033742A1 (fr) | 2002-04-25 |
FR2815359A1 (fr) | 2002-04-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |