FR2815359B1 - Nettoyage apres gravure d'un dielectrique associe au cuivre - Google Patents

Nettoyage apres gravure d'un dielectrique associe au cuivre

Info

Publication number
FR2815359B1
FR2815359B1 FR0013267A FR0013267A FR2815359B1 FR 2815359 B1 FR2815359 B1 FR 2815359B1 FR 0013267 A FR0013267 A FR 0013267A FR 0013267 A FR0013267 A FR 0013267A FR 2815359 B1 FR2815359 B1 FR 2815359B1
Authority
FR
France
Prior art keywords
engraving
copper
cleaning
dielectric associated
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0013267A
Other languages
English (en)
Other versions
FR2815359A1 (fr
Inventor
Jean Pierre Lallier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arkema France SA
Original Assignee
Atofina SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atofina SA filed Critical Atofina SA
Priority to FR0013267A priority Critical patent/FR2815359B1/fr
Priority to PCT/FR2001/003141 priority patent/WO2002033742A1/fr
Publication of FR2815359A1 publication Critical patent/FR2815359A1/fr
Application granted granted Critical
Publication of FR2815359B1 publication Critical patent/FR2815359B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
FR0013267A 2000-10-17 2000-10-17 Nettoyage apres gravure d'un dielectrique associe au cuivre Expired - Fee Related FR2815359B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0013267A FR2815359B1 (fr) 2000-10-17 2000-10-17 Nettoyage apres gravure d'un dielectrique associe au cuivre
PCT/FR2001/003141 WO2002033742A1 (fr) 2000-10-17 2001-10-11 Nettoyage apres gravure d'un dielectrique associe au cuivre

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0013267A FR2815359B1 (fr) 2000-10-17 2000-10-17 Nettoyage apres gravure d'un dielectrique associe au cuivre

Publications (2)

Publication Number Publication Date
FR2815359A1 FR2815359A1 (fr) 2002-04-19
FR2815359B1 true FR2815359B1 (fr) 2003-05-16

Family

ID=8855421

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0013267A Expired - Fee Related FR2815359B1 (fr) 2000-10-17 2000-10-17 Nettoyage apres gravure d'un dielectrique associe au cuivre

Country Status (2)

Country Link
FR (1) FR2815359B1 (fr)
WO (1) WO2002033742A1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5496491A (en) * 1991-01-25 1996-03-05 Ashland Oil Company Organic stripping composition
US5556482A (en) * 1991-01-25 1996-09-17 Ashland, Inc. Method of stripping photoresist with composition containing inhibitor
JP3160344B2 (ja) * 1991-01-25 2001-04-25 アシュランド インコーポレーテッド 有機ストリッピング組成物
FR2792737B1 (fr) * 1999-04-26 2001-05-18 Atochem Elf Sa Compositions pour le decapage de photoresists dans la fabrication de circuits integres

Also Published As

Publication number Publication date
WO2002033742A1 (fr) 2002-04-25
FR2815359A1 (fr) 2002-04-19

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Legal Events

Date Code Title Description
ST Notification of lapse