FR2813616B1 - Procede de cristallogenese et installation pour sa mise en oeuvre, et cristaux obtenus - Google Patents

Procede de cristallogenese et installation pour sa mise en oeuvre, et cristaux obtenus

Info

Publication number
FR2813616B1
FR2813616B1 FR0011315A FR0011315A FR2813616B1 FR 2813616 B1 FR2813616 B1 FR 2813616B1 FR 0011315 A FR0011315 A FR 0011315A FR 0011315 A FR0011315 A FR 0011315A FR 2813616 B1 FR2813616 B1 FR 2813616B1
Authority
FR
France
Prior art keywords
installation
crystals obtained
implementing same
crystallogenesis
crystallogenesis process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR0011315A
Other languages
English (en)
Other versions
FR2813616A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SOREM
Original Assignee
SOREM
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SOREM filed Critical SOREM
Priority to FR0011315A priority Critical patent/FR2813616B1/fr
Priority to PCT/FR2001/002754 priority patent/WO2002020878A1/fr
Priority to AU2001286028A priority patent/AU2001286028A1/en
Publication of FR2813616A1 publication Critical patent/FR2813616A1/fr
Application granted granted Critical
Publication of FR2813616B1 publication Critical patent/FR2813616B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR0011315A 2000-09-05 2000-09-05 Procede de cristallogenese et installation pour sa mise en oeuvre, et cristaux obtenus Expired - Lifetime FR2813616B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR0011315A FR2813616B1 (fr) 2000-09-05 2000-09-05 Procede de cristallogenese et installation pour sa mise en oeuvre, et cristaux obtenus
PCT/FR2001/002754 WO2002020878A1 (fr) 2000-09-05 2001-09-05 Procede de cristallogenese et installation pour sa mise en oeuvre, et cristaux obtenus
AU2001286028A AU2001286028A1 (en) 2000-09-05 2001-09-05 Crystal growing method and installation therefor, and resulting crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0011315A FR2813616B1 (fr) 2000-09-05 2000-09-05 Procede de cristallogenese et installation pour sa mise en oeuvre, et cristaux obtenus

Publications (2)

Publication Number Publication Date
FR2813616A1 FR2813616A1 (fr) 2002-03-08
FR2813616B1 true FR2813616B1 (fr) 2003-10-24

Family

ID=8853993

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0011315A Expired - Lifetime FR2813616B1 (fr) 2000-09-05 2000-09-05 Procede de cristallogenese et installation pour sa mise en oeuvre, et cristaux obtenus

Country Status (3)

Country Link
AU (1) AU2001286028A1 (fr)
FR (1) FR2813616B1 (fr)
WO (1) WO2002020878A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1475464A1 (fr) * 2003-05-06 2004-11-10 Corning Incorporated Procédé pour la production d'un cristal optique
CN113337889B (zh) * 2021-06-07 2022-03-22 眉山博雅新材料股份有限公司 一种制备偏硼酸钡籽晶的方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4086424A (en) * 1977-03-31 1978-04-25 Mellen Sr Robert H Dynamic gradient furnace and method
US4215274A (en) * 1977-12-23 1980-07-29 Kms Fusion, Inc. X-ray detector with picosecond time resolution
JP3686204B2 (ja) * 1997-03-10 2005-08-24 株式会社ニコン 蛍石単結晶のアニール方法
JPH10260349A (ja) * 1997-03-18 1998-09-29 Nikon Corp 紫外線レーザ用結像光学系
JPH10279396A (ja) * 1997-03-31 1998-10-20 Canon Inc フッ化物結晶の製造装置
JPH10279378A (ja) * 1997-04-01 1998-10-20 Canon Inc 結晶製造方法及び製造装置
JP3988217B2 (ja) * 1997-09-09 2007-10-10 株式会社ニコン 大口径蛍石の製造装置および製造方法
JP2000128696A (ja) * 1998-10-16 2000-05-09 Nikon Corp フッ化物単結晶からなる光学素子作製用素材とその製造方法

Also Published As

Publication number Publication date
FR2813616A1 (fr) 2002-03-08
AU2001286028A1 (en) 2002-03-22
WO2002020878A1 (fr) 2002-03-14

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