FR2788172B1 - Procede de realisation de structures laser de puissance a miroirs non absorbants et structures ainsi obtenues - Google Patents

Procede de realisation de structures laser de puissance a miroirs non absorbants et structures ainsi obtenues

Info

Publication number
FR2788172B1
FR2788172B1 FR9816660A FR9816660A FR2788172B1 FR 2788172 B1 FR2788172 B1 FR 2788172B1 FR 9816660 A FR9816660 A FR 9816660A FR 9816660 A FR9816660 A FR 9816660A FR 2788172 B1 FR2788172 B1 FR 2788172B1
Authority
FR
France
Prior art keywords
structures
laser power
producing laser
absorbing mirrors
mirrors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9816660A
Other languages
English (en)
Other versions
FR2788172A1 (fr
Inventor
Jean Louis Guyaux
Jean Charles Garcia
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR9816660A priority Critical patent/FR2788172B1/fr
Publication of FR2788172A1 publication Critical patent/FR2788172A1/fr
Application granted granted Critical
Publication of FR2788172B1 publication Critical patent/FR2788172B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
FR9816660A 1998-12-30 1998-12-30 Procede de realisation de structures laser de puissance a miroirs non absorbants et structures ainsi obtenues Expired - Fee Related FR2788172B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR9816660A FR2788172B1 (fr) 1998-12-30 1998-12-30 Procede de realisation de structures laser de puissance a miroirs non absorbants et structures ainsi obtenues

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9816660A FR2788172B1 (fr) 1998-12-30 1998-12-30 Procede de realisation de structures laser de puissance a miroirs non absorbants et structures ainsi obtenues

Publications (2)

Publication Number Publication Date
FR2788172A1 FR2788172A1 (fr) 2000-07-07
FR2788172B1 true FR2788172B1 (fr) 2001-10-05

Family

ID=9534703

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9816660A Expired - Fee Related FR2788172B1 (fr) 1998-12-30 1998-12-30 Procede de realisation de structures laser de puissance a miroirs non absorbants et structures ainsi obtenues

Country Status (1)

Country Link
FR (1) FR2788172B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1263100A3 (fr) * 2001-05-28 2005-02-09 Fuji Photo Film Co., Ltd. Laser à semiconducteur et son procédé de fabrication

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS587893A (ja) * 1981-07-08 1983-01-17 Hitachi Ltd 半導体レ−ザ素子
JPS6062179A (ja) * 1983-09-16 1985-04-10 Nec Corp 半導体レ−ザ
JP3254812B2 (ja) * 1993-05-31 2002-02-12 日本電信電話株式会社 半導体レーザ及びその製造方法
JPH07111357A (ja) * 1993-10-05 1995-04-25 Mitsubishi Electric Corp 半導体レーザの製造方法

Also Published As

Publication number Publication date
FR2788172A1 (fr) 2000-07-07

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Legal Events

Date Code Title Description
CL Concession to grant licenses
CD Change of name or company name
ST Notification of lapse

Effective date: 20060831