FR2787919B1 - Procede de realisation d'un substrat destine a faire croitre un compose nitrure - Google Patents

Procede de realisation d'un substrat destine a faire croitre un compose nitrure

Info

Publication number
FR2787919B1
FR2787919B1 FR9816359A FR9816359A FR2787919B1 FR 2787919 B1 FR2787919 B1 FR 2787919B1 FR 9816359 A FR9816359 A FR 9816359A FR 9816359 A FR9816359 A FR 9816359A FR 2787919 B1 FR2787919 B1 FR 2787919B1
Authority
FR
France
Prior art keywords
grow
producing
nitride compound
substrate intended
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9816359A
Other languages
English (en)
Other versions
FR2787919A1 (fr
Inventor
Jean Charles Garcia
Jean Louis Guyaux
Didier Pribat
Daniel Rondi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR9816359A priority Critical patent/FR2787919B1/fr
Publication of FR2787919A1 publication Critical patent/FR2787919A1/fr
Application granted granted Critical
Publication of FR2787919B1 publication Critical patent/FR2787919B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
FR9816359A 1998-12-23 1998-12-23 Procede de realisation d'un substrat destine a faire croitre un compose nitrure Expired - Fee Related FR2787919B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR9816359A FR2787919B1 (fr) 1998-12-23 1998-12-23 Procede de realisation d'un substrat destine a faire croitre un compose nitrure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9816359A FR2787919B1 (fr) 1998-12-23 1998-12-23 Procede de realisation d'un substrat destine a faire croitre un compose nitrure

Publications (2)

Publication Number Publication Date
FR2787919A1 FR2787919A1 (fr) 2000-06-30
FR2787919B1 true FR2787919B1 (fr) 2001-03-09

Family

ID=9534428

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9816359A Expired - Fee Related FR2787919B1 (fr) 1998-12-23 1998-12-23 Procede de realisation d'un substrat destine a faire croitre un compose nitrure

Country Status (1)

Country Link
FR (1) FR2787919B1 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19959182A1 (de) * 1999-12-08 2001-06-28 Max Planck Gesellschaft Verfahren zum Herstellen eines optoelektronischen Bauelements
US7407869B2 (en) 2000-11-27 2008-08-05 S.O.I.Tec Silicon On Insulator Technologies Method for manufacturing a free-standing substrate made of monocrystalline semiconductor material
US8507361B2 (en) 2000-11-27 2013-08-13 Soitec Fabrication of substrates with a useful layer of monocrystalline semiconductor material
FR2817395B1 (fr) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
FR2840731B3 (fr) 2002-06-11 2004-07-30 Soitec Silicon On Insulator Procede de fabrication d'un substrat comportant une couche utile en materiau semi-conducteur monocristallin de proprietes ameliorees
FR2817394B1 (fr) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
FR2894990B1 (fr) 2005-12-21 2008-02-22 Soitec Silicon On Insulator Procede de fabrication de substrats, notamment pour l'optique,l'electronique ou l'optoelectronique et substrat obtenu selon ledit procede
FR2840730B1 (fr) * 2002-06-11 2005-05-27 Soitec Silicon On Insulator Procede de fabrication d'un substrat comportant une couche utile en materiau semi-conducteur monocristallin de proprietes ameliorees
ATE504082T1 (de) 2003-05-27 2011-04-15 Soitec Silicon On Insulator Verfahren zur herstellung einer heteroepitaktischen mikrostruktur
FR2855650B1 (fr) * 2003-05-30 2006-03-03 Soitec Silicon On Insulator Substrats pour systemes contraints et procede de croissance cristalline sur un tel substrat
FR2863405B1 (fr) 2003-12-08 2006-02-03 Commissariat Energie Atomique Collage moleculaire de composants microelectroniques sur un film polymere
TW200802544A (en) 2006-04-25 2008-01-01 Osram Opto Semiconductors Gmbh Composite substrate and method for making the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2754734B2 (ja) * 1989-06-06 1998-05-20 旭硝子株式会社 複合半導体基板
JPH10275905A (ja) * 1997-03-31 1998-10-13 Mitsubishi Electric Corp シリコンウェーハの製造方法およびシリコンウェーハ

Also Published As

Publication number Publication date
FR2787919A1 (fr) 2000-06-30

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CD Change of name or company name
ST Notification of lapse

Effective date: 20060831