FR2763426B1 - Dispositif a semi-conducteur de detection de rayons radio-actifs - Google Patents

Dispositif a semi-conducteur de detection de rayons radio-actifs

Info

Publication number
FR2763426B1
FR2763426B1 FR9805965A FR9805965A FR2763426B1 FR 2763426 B1 FR2763426 B1 FR 2763426B1 FR 9805965 A FR9805965 A FR 9805965A FR 9805965 A FR9805965 A FR 9805965A FR 2763426 B1 FR2763426 B1 FR 2763426B1
Authority
FR
France
Prior art keywords
semiconductor device
detecting radio
active radiations
radiations
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9805965A
Other languages
English (en)
Other versions
FR2763426A1 (fr
Inventor
Takao Wada
Yuzo Ishibashi
Shigeru Ishii
Yoshikatsu Kuroda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Doryokuro Kakunenryo Kaihatsu Jigyodan
Original Assignee
Doryokuro Kakunenryo Kaihatsu Jigyodan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Doryokuro Kakunenryo Kaihatsu Jigyodan filed Critical Doryokuro Kakunenryo Kaihatsu Jigyodan
Publication of FR2763426A1 publication Critical patent/FR2763426A1/fr
Application granted granted Critical
Publication of FR2763426B1 publication Critical patent/FR2763426B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
FR9805965A 1997-05-13 1998-05-12 Dispositif a semi-conducteur de detection de rayons radio-actifs Expired - Lifetime FR2763426B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12224697A JP3170221B2 (ja) 1997-05-13 1997-05-13 半導体放射線検出素子

Publications (2)

Publication Number Publication Date
FR2763426A1 FR2763426A1 (fr) 1998-11-20
FR2763426B1 true FR2763426B1 (fr) 2000-08-11

Family

ID=14831218

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9805965A Expired - Lifetime FR2763426B1 (fr) 1997-05-13 1998-05-12 Dispositif a semi-conducteur de detection de rayons radio-actifs

Country Status (4)

Country Link
US (1) US6020619A (fr)
JP (1) JP3170221B2 (fr)
DE (1) DE19821293C2 (fr)
FR (1) FR2763426B1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11148975A (ja) 1997-11-14 1999-06-02 Japan Nuclear Cycle Development Inst State Of Projects(Jnc) マイクロコンピュータ及びそのアクセス速度制御方法
US6995376B2 (en) * 2003-07-01 2006-02-07 International Business Machines Corporation Silicon-on-insulator latch-up pulse-radiation detector
JP2009041942A (ja) * 2007-08-06 2009-02-26 Fuji Electric Systems Co Ltd 半導体放射線検出器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1614764C3 (de) * 1967-02-09 1978-08-17 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Strahlungsdosimeter mit Halbleiterdioden als Strahlungsindikator und zur Temperaturkompensation
US4213045A (en) * 1978-08-29 1980-07-15 The United States Of America As Represented By The Secretary Of The Air Force Metal nitride oxide semiconductor (MNOS) dosimeter
DE4229315A1 (de) * 1992-09-02 1994-03-03 Siemens Ag Röntgendetektorelement
US5339066A (en) * 1993-03-30 1994-08-16 The United States Of America As Represented By The Secretary Of The Navy Energy-measuring resistor bank

Also Published As

Publication number Publication date
FR2763426A1 (fr) 1998-11-20
DE19821293A1 (de) 1998-11-19
DE19821293C2 (de) 2003-01-16
JP3170221B2 (ja) 2001-05-28
JPH10311878A (ja) 1998-11-24
US6020619A (en) 2000-02-01

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