FR2763426B1 - Dispositif a semi-conducteur de detection de rayons radio-actifs - Google Patents
Dispositif a semi-conducteur de detection de rayons radio-actifsInfo
- Publication number
- FR2763426B1 FR2763426B1 FR9805965A FR9805965A FR2763426B1 FR 2763426 B1 FR2763426 B1 FR 2763426B1 FR 9805965 A FR9805965 A FR 9805965A FR 9805965 A FR9805965 A FR 9805965A FR 2763426 B1 FR2763426 B1 FR 2763426B1
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- detecting radio
- active radiations
- radiations
- active
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000002285 radioactive effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12224697A JP3170221B2 (ja) | 1997-05-13 | 1997-05-13 | 半導体放射線検出素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2763426A1 FR2763426A1 (fr) | 1998-11-20 |
FR2763426B1 true FR2763426B1 (fr) | 2000-08-11 |
Family
ID=14831218
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9805965A Expired - Lifetime FR2763426B1 (fr) | 1997-05-13 | 1998-05-12 | Dispositif a semi-conducteur de detection de rayons radio-actifs |
Country Status (4)
Country | Link |
---|---|
US (1) | US6020619A (fr) |
JP (1) | JP3170221B2 (fr) |
DE (1) | DE19821293C2 (fr) |
FR (1) | FR2763426B1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11148975A (ja) | 1997-11-14 | 1999-06-02 | Japan Nuclear Cycle Development Inst State Of Projects(Jnc) | マイクロコンピュータ及びそのアクセス速度制御方法 |
US6995376B2 (en) * | 2003-07-01 | 2006-02-07 | International Business Machines Corporation | Silicon-on-insulator latch-up pulse-radiation detector |
JP2009041942A (ja) * | 2007-08-06 | 2009-02-26 | Fuji Electric Systems Co Ltd | 半導体放射線検出器 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1614764C3 (de) * | 1967-02-09 | 1978-08-17 | Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm | Strahlungsdosimeter mit Halbleiterdioden als Strahlungsindikator und zur Temperaturkompensation |
US4213045A (en) * | 1978-08-29 | 1980-07-15 | The United States Of America As Represented By The Secretary Of The Air Force | Metal nitride oxide semiconductor (MNOS) dosimeter |
DE4229315A1 (de) * | 1992-09-02 | 1994-03-03 | Siemens Ag | Röntgendetektorelement |
US5339066A (en) * | 1993-03-30 | 1994-08-16 | The United States Of America As Represented By The Secretary Of The Navy | Energy-measuring resistor bank |
-
1997
- 1997-05-13 JP JP12224697A patent/JP3170221B2/ja not_active Expired - Lifetime
-
1998
- 1998-05-12 FR FR9805965A patent/FR2763426B1/fr not_active Expired - Lifetime
- 1998-05-13 DE DE19821293A patent/DE19821293C2/de not_active Expired - Lifetime
- 1998-05-13 US US09/078,262 patent/US6020619A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2763426A1 (fr) | 1998-11-20 |
DE19821293A1 (de) | 1998-11-19 |
DE19821293C2 (de) | 2003-01-16 |
JP3170221B2 (ja) | 2001-05-28 |
JPH10311878A (ja) | 1998-11-24 |
US6020619A (en) | 2000-02-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CA | Change of address | ||
CD | Change of name or company name | ||
PLFP | Fee payment |
Year of fee payment: 19 |
|
PLFP | Fee payment |
Year of fee payment: 20 |