FR2740612B1 - Dispositif a semiconducteurs destine a fournir une tension de sortie correspondant a une tension d'alimentation elevee - Google Patents
Dispositif a semiconducteurs destine a fournir une tension de sortie correspondant a une tension d'alimentation eleveeInfo
- Publication number
- FR2740612B1 FR2740612B1 FR9606985A FR9606985A FR2740612B1 FR 2740612 B1 FR2740612 B1 FR 2740612B1 FR 9606985 A FR9606985 A FR 9606985A FR 9606985 A FR9606985 A FR 9606985A FR 2740612 B1 FR2740612 B1 FR 2740612B1
- Authority
- FR
- France
- Prior art keywords
- providing
- semiconductor device
- high supply
- output voltage
- supply voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28154795A JP3386943B2 (ja) | 1995-10-30 | 1995-10-30 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2740612A1 FR2740612A1 (fr) | 1997-04-30 |
FR2740612B1 true FR2740612B1 (fr) | 1999-04-16 |
Family
ID=17640707
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9606985A Expired - Fee Related FR2740612B1 (fr) | 1995-10-30 | 1996-06-06 | Dispositif a semiconducteurs destine a fournir une tension de sortie correspondant a une tension d'alimentation elevee |
Country Status (4)
Country | Link |
---|---|
US (1) | US6586780B1 (fr) |
JP (1) | JP3386943B2 (fr) |
DE (1) | DE19614522C2 (fr) |
FR (1) | FR2740612B1 (fr) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6856013B1 (en) * | 1999-02-19 | 2005-02-15 | Micron Technology, Inc. | Integrated circuit packages, ball-grid array integrated circuit packages and methods of packaging an integrated circuit |
JP4610786B2 (ja) * | 2001-02-20 | 2011-01-12 | 三菱電機株式会社 | 半導体装置 |
JP5191513B2 (ja) * | 2001-02-20 | 2013-05-08 | 三菱電機株式会社 | 半導体装置 |
US6952027B2 (en) * | 2002-11-29 | 2005-10-04 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit device and electronic card using the same |
JP4775684B2 (ja) * | 2003-09-29 | 2011-09-21 | オンセミコンダクター・トレーディング・リミテッド | 半導体集積回路装置 |
JP4440040B2 (ja) * | 2004-08-27 | 2010-03-24 | 三菱電機株式会社 | 半導体装置 |
US7045830B1 (en) * | 2004-12-07 | 2006-05-16 | Fairchild Semiconductor Corporation | High-voltage diodes formed in advanced power integrated circuit devices |
JP4914589B2 (ja) | 2005-08-26 | 2012-04-11 | 三菱電機株式会社 | 半導体製造装置、半導体製造方法および半導体装置 |
US20070200136A1 (en) * | 2006-02-28 | 2007-08-30 | Ronghua Zhu | Isolated zener diodes |
JP5047653B2 (ja) * | 2007-03-13 | 2012-10-10 | 三菱電機株式会社 | 半導体装置 |
JP5092174B2 (ja) * | 2007-04-12 | 2012-12-05 | 三菱電機株式会社 | 半導体装置 |
JP4697242B2 (ja) * | 2008-02-21 | 2011-06-08 | セイコーエプソン株式会社 | 半導体装置 |
JP4632068B2 (ja) * | 2008-05-30 | 2011-02-16 | 三菱電機株式会社 | 半導体装置 |
US8134212B2 (en) * | 2008-08-08 | 2012-03-13 | Texas Instruments Incorporated | Implanted well breakdown in high voltage devices |
CN102349156B (zh) * | 2009-09-29 | 2015-03-18 | 富士电机株式会社 | 高电压半导体器件和驱动电路 |
US8198703B2 (en) * | 2010-01-18 | 2012-06-12 | Freescale Semiconductor, Inc. | Zener diode with reduced substrate current |
US8441031B2 (en) * | 2011-01-28 | 2013-05-14 | Nxp B.V. | ESD protection device |
JP6154705B2 (ja) * | 2013-09-24 | 2017-06-28 | 株式会社 日立パワーデバイス | 半導体スイッチ回路、信号処理装置、および、超音波診断装置 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4069494A (en) * | 1973-02-17 | 1978-01-17 | Ferranti Limited | Inverter circuit arrangements |
FR2408914A1 (fr) * | 1977-11-14 | 1979-06-08 | Radiotechnique Compelec | Dispositif semi-conducteur monolithique comprenant deux transistors complementaires et son procede de fabrication |
EP0367301A3 (fr) * | 1984-06-22 | 1990-05-16 | Hitachi, Ltd. | Circuit de commutation semiconducteur |
JPS61107813A (ja) * | 1984-10-30 | 1986-05-26 | Mitsubishi Electric Corp | 半導体装置 |
JPS6232722A (ja) | 1985-08-05 | 1987-02-12 | Hitachi Ltd | プツシユプル出力回路 |
GB2206993A (en) * | 1987-06-08 | 1989-01-18 | Philips Electronic Associated | A method of manufacturing a semiconductor device |
JPH0693615B2 (ja) * | 1988-05-16 | 1994-11-16 | 株式会社東芝 | ドライバ回路 |
JPH025610A (ja) * | 1988-06-24 | 1990-01-10 | Toshiba Corp | 出力回路 |
JPH0626308B2 (ja) * | 1988-07-08 | 1994-04-06 | 株式会社東芝 | 出力回路 |
JPH0626309B2 (ja) * | 1988-07-22 | 1994-04-06 | 株式会社東芝 | 出力回路 |
US4989127A (en) * | 1989-05-09 | 1991-01-29 | North American Philips Corporation | Driver for high voltage half-bridge circuits |
US5455447A (en) * | 1989-05-10 | 1995-10-03 | Texas Instruments Incorporated | Vertical PNP transistor in merged bipolar/CMOS technology |
US4979001A (en) * | 1989-06-30 | 1990-12-18 | Micrel Incorporated | Hidden zener diode structure in configurable integrated circuit |
JPH0430571A (ja) | 1990-05-28 | 1992-02-03 | Fuji Electric Co Ltd | 高耐圧型駆動用半導体集積回路 |
US5357393A (en) * | 1992-05-05 | 1994-10-18 | Xerox Corporation | Integrated ultra low leakage high voltage protection circuit |
US5376816A (en) * | 1992-06-24 | 1994-12-27 | Nec Corporation | Bi-cmos integrated circuit device having buried region use in common for bipolar and mos transistors |
JPH06151737A (ja) * | 1992-10-30 | 1994-05-31 | Toshiba Corp | 半導体装置及びその製造方法 |
US5442220A (en) * | 1993-03-10 | 1995-08-15 | Nec Corporation | Constant voltage diode having a reduced leakage current and a high electrostatic breakdown voltage |
JPH07283408A (ja) * | 1994-04-06 | 1995-10-27 | Rohm Co Ltd | 半導体装置 |
-
1995
- 1995-10-30 JP JP28154795A patent/JP3386943B2/ja not_active Expired - Lifetime
-
1996
- 1996-04-12 DE DE19614522A patent/DE19614522C2/de not_active Expired - Lifetime
- 1996-06-06 FR FR9606985A patent/FR2740612B1/fr not_active Expired - Fee Related
-
1997
- 1997-09-16 US US08/931,688 patent/US6586780B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH09129762A (ja) | 1997-05-16 |
JP3386943B2 (ja) | 2003-03-17 |
FR2740612A1 (fr) | 1997-04-30 |
DE19614522C2 (de) | 2003-03-20 |
US6586780B1 (en) | 2003-07-01 |
DE19614522A1 (de) | 1997-05-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20140228 |